Inventor · disambiguated record
Cheng-Tyng Yen
Also filed as: YEN CHENG-TYNG
33 granted patents·9 pending applications·132 citations·filing 2005–2024
96Inventor score
Files withHESTIA POWER INC12IND TECH RES INST12Fast SiC Semiconductor Incorporated11CHEN YOUNG-SHYING2YEN CHENG-TYNG2
Top patents by PatentIndex Score
42 records- 0197US9368650B1SiC junction barrier controlled schottky rectifierHESTIA POWER INC·Filed 2015·Granted Jun 14, 2016·21 cites·11 claims
- 0293US11018228B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2020·Granted May 25, 2021·3 cites·13 claims
- 0393US9246016B1Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Jan 26, 2016·11 cites·15 claims
- 0492US8841721B2Stepped trench MOSFET and method of fabricating the sameIND TECH RES INST·Filed 2013·Granted Sep 23, 2014·16 cites·20 claims
- 0591US8766279B1SiC-based trench-type schottky deviceIND TECH RES INST·Filed 2012·Granted Jul 1, 2014·15 cites·13 claims
- 0687US11489521B2Power transistor module and controlling method thereofFast SiC Semiconductor Incorporated·Filed 2021·Granted Nov 1, 2022·2 cites·23 claims
- 0787US10483389B2Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Nov 19, 2019·6 cites·23 claims
- 0887US9625538B2Magnetic field sensors and sensing circuitsIND TECH RES INST·Filed 2016·Granted Apr 18, 2017·3 cites·7 claims
- 0985US8421171B2Magnetic random access memoryYEN CHENG-TYNG·Filed 2010·Granted Apr 16, 2013·14 cites·9 claims
- 1084US7790828B2Precursor solution for polyimide/silica composite material, its manufacture method, and polymide/silica composite material having low volume shrinkageETERNAL CHEMICAL CO LTD·Filed 2005·Granted Sep 7, 2010·6 cites·11 claims
- 1181US9373713B2Silicon carbide semiconductor device and method of manufacture thereofHESTIA POWER INC·Filed 2015·Granted Jun 21, 2016·4 cites·19 claims
- 1279US11195922B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2020·Granted Dec 7, 2021·1 cites·16 claims
- 1379US10418476B2Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2017·Granted Sep 17, 2019·3 cites·10 claims
- 1477US9761703B1Wide bandgap semiconductor device with adjustable voltage levelHESTIA POWER INC·Filed 2016·Granted Sep 12, 2017·3 cites·19 claims
- 1577US8026562B2Magnetic memory element utilizing spin transfer switchingIND TECH RES INST·Filed 2010·Granted Sep 27, 2011·5 cites·12 claims
- 1674US10020368B2Silicon carbide semiconductor element and manufacturing method thereofHESTIA POWER INC·Filed 2016·Granted Jul 10, 2018·2 cites·15 claims
- 1771US9209293B2Integrated device having MOSFET cell array embedded with barrier Schottky diodeIND TECH RES INST·Filed 2013·Granted Dec 8, 2015·3 cites·17 claims
- 1869US8101703B2Precursor solution for polyimide/silica composite material, its manufacture method, and polyimide/silica composite material having low volume shrinkageWU CHUNG-JEN·Filed 2010·Granted Jan 24, 2012·1 cites·11 claims
- 1968US9018640B1Silicon carbide power device equipped with termination structureHESTIA POWER INC·Filed 2014·Granted Apr 28, 2015·2 cites·12 claims
- 2067US8878327B2Schottky barrier device having a plurality of double-recessed trenchesIND TECH RES INST·Filed 2012·Granted Nov 4, 2014·2 cites·6 claims
- 2167US7829964B2Magnetic memory element utilizing spin transfer switchingIND TECH RES INST·Filed 2009·Granted Nov 9, 2010·5 cites·27 claims
- 2266US9645204B2Magnetic field sensors and sensng circuitsCHEN YOUNG-SHYING·Filed 2012·Granted May 9, 2017·2 cites·22 claims
- 2364US12261594B2Cascode diode circuitFast SiC Semiconductor Incorporated·Filed 2023·Granted Mar 25, 2025·0 cites·9 claims
- 2463US10396774B2Intelligent power module operable to be driven by negative gate voltageHESTIA POWER INC·Filed 2017·Granted Aug 27, 2019·1 cites·12 claims
- 2558US12419089B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Granted Sep 16, 2025·0 cites·15 claims
- 2658US2024347599A1Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2024·Application pending·0 cites
- 2756US8956963B2Schottky barrier diode and fabricating method thereofIND TECH RES INST·Filed 2013·Granted Feb 17, 2015·1 cites·9 claims
- 2855US2024234569A9silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Application pending·0 cites
- 2954US12495576B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Granted Dec 9, 2025·0 cites·12 claims
- 3050US11222971B2Silicon carbide semiconductor device integrating clamper circuit for clamping voltageHESTIA POWER INC·Filed 2019·Granted Jan 11, 2022·0 cites·10 claims
- 3150US2023307507A1Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2022·Application pending·0 cites
- 3249US11190181B2Power transistor module and controlling method thereofFast SiC Semiconductor Incorporated·Filed 2021·Granted Nov 30, 2021·0 cites·14 claims
- 3348US11888056B2Silicon carbide MOS-gated semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2021·Granted Jan 30, 2024·0 cites·11 claims
- 3443US10497777B2Semiconductor power deviceHESTIA POWER INC·Filed 2017·Granted Dec 3, 2019·0 cites·15 claims
- 3543US2015287818A1Semiconductor structureIND TECH RES INST·Filed 2014·Application pending·0 cites
- 3643US2011159316A1Magnetoresistive device with perpendicular magnetizationIND TECH RES INST·Filed 2010·Application pending·0 cites
- 3741US2014159053A1Sic trench gate transistor with segmented field shielding region and method of fabricating the sameIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3840US8835935B2Trench MOS transistor having a trench doped region formed deeper than the trench gateHUNG CHIEN-CHUNG·Filed 2012·Granted Sep 16, 2014·0 cites·17 claims
- 3940US2007172964A1Method of forming self-aligned contact via for magnetic random access memoryYEN CHENG-TYNG·Filed 2006·Application pending·0 cites
- 4039US2012068698A1Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuitCHEN YOUNG-SHYING·Filed 2011·Application pending·0 cites
- 4137US9685552B2Silicon carbide field effect transistorHESTIA POWER INC·Filed 2015·Granted Jun 20, 2017·0 cites·14 claims
- 4236US2009032891A1Structure of magnetic random access memory and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →