Inventor · disambiguated record
Byung S. Moon
Also filed as: MOON BYUNG S · MOON BYUNG SICK
23 granted patents·1 pending application·198 citations·filing 1998–2024
94Inventor score
Top patents by PatentIndex Score
24 records- 0190US12002537B2Pre-decoder circuityMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 4, 2024·3 cites·20 claims
- 0289US6762948B2Semiconductor memory device having first and second memory architecture and memory system using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 13, 2004·89 cites·12 claims
- 0380US11132142B2Systems and methods for writing zeros to a memory arrayMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 28, 2021·1 cites·23 claims
- 0480US10366743B1Memory with a reduced array data bus footprintMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 30, 2019·4 cites·19 claims
- 0578US10402116B2Systems and methods for writing zeros to a memory arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 3, 2019·3 cites·21 claims
- 0677US10497424B2Systems and methods for plate voltage regulation during memory array accessMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 3, 2019·3 cites·10 claims
- 0770US6414896B1Semiconductor memory device having column redundancy scheme to improve redundancy efficiencySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 2, 2002·19 cites·28 claims
- 0870US6366155B1Reference voltage generators and methods including supplementary current generation, and integrated circuits including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 2, 2002·15 cites·40 claims
- 0969US10354717B1Reduced shifter memory systemMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·2 cites·17 claims
- 1067US10825491B2Systems and methods for writing zeros to a memory arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 3, 2020·2 cites·19 claims
- 1165US10795603B2Systems and methods for writing zeros to a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 6, 2020·1 cites·22 claims
- 1263US10847222B1Timing control of voltage supply during polarity transitionMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 24, 2020·1 cites·20 claims
- 1362US11087820B2Systems and methods for plate voltage regulation during memory array accessMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 10, 2021·0 cites·24 claims
- 1462US2024321327A1Pre-decoder circuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1560US6078536APacket type integrated circuit memory devices having pins assigned direct test mode and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 20, 2000·19 cites·15 claims
- 1659US6163498AMethods and systems for column line selection in a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 19, 2000·19 cites·12 claims
- 1758US11183237B2Timing control of voltage supply during polarity transitionMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 23, 2021·0 cites·20 claims
- 1857US6636451B2Semiconductor memory device internal voltage generator and internal voltage generating methodSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·10 cites·15 claims
- 1951US10777236B2Methods and apparatuses of driver circuits without voltage level shiftersMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·0 cites·20 claims
- 2049US10790012B2Memory with a reduced array data bus footprintMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 29, 2020·0 cites·22 claims
- 2148US10872658B2Reduced shifter memory systemMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 22, 2020·0 cites·17 claims
- 2246US10504563B1Methods and apparatuses of driver circuits without voltage level shiftersMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 10, 2019·0 cites·8 claims
- 2343US6219298B1High-speed address decoders and related address decoding methodsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 17, 2001·5 cites·16 claims
- 2432US6326833B1Highly effective charge pump employing NMOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 4, 2001·2 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →