Inventor · disambiguated record
Dongfei Pei
Also filed as: PEI DONGFEI
5 granted patents·5 pending applications·4 citations·filing 2017–2025
66Inventor score
Files withFINWAVE SEMICONDUCTOR INC5CAMBRIDGE ELECTRONICS INC3GLOBALFOUNDRIES INC1WISCONSIN ALUMNI RES FOUND1
Top patents by PatentIndex Score
10 records- 0181US11695052B2III-Nitride transistor with a cap layer for RF operationCAMBRIDGE ELECTRONICS INC·Filed 2021·Granted Jul 4, 2023·2 cites·27 claims
- 0274US11876130B2III-nitride transistor with a modified drain access regionCAMBRIDGE ELECTRONICS INC·Filed 2020·Granted Jan 16, 2024·1 cites·18 claims
- 0367US10157833B1Via and skip via structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 0460US2025309896A1High Pull-up Slew Rate and Low Quiescent Power for Gate Driver and Logic ElementsFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 0559US2025098274A1Iii-nitride transistor with top and bottom cap layers with etch stopFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 0651US12080807B2III-nitride diode with a modified access regionCAMBRIDGE ELECTRONICS INC·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 0749US2025159960A1Iii-nitride transistor with high n doping in access regionFINWAVE SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 0848US2023043810A1Iii-nitride transistor with electrically connected p-type layer in access regionFINWAVE SEMICONDUCTOR INC·Filed 2022·Application pending·0 cites
- 0942US2025267901A1Semiconductor structure with patterned dielectric layer beneath field platesFINWAVE SEMICONDUCTOR INC·Filed 2025·Application pending·0 cites
- 1041US10090150B2Low dielectric constant (low-k) dielectric and method of forming the sameWISCONSIN ALUMNI RES FOUND·Filed 2017·Granted Oct 2, 2018·0 cites·29 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →