Inventor · disambiguated record
Shyh-Horng Yang
Also filed as: YANG SHYH-HORNG
27 granted patents·4 pending applications·160 citations·filing 2004–2023
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD12TAIWAN SEMICONDUCTOR MFG6TEXAS INSTRUMENTS INC6HOUSTON THEODORE W3CHAO DONALD Y1
Top patents by PatentIndex Score
31 records- 0194US9171925B2Multi-gate devices with replaced-channels and methods for forming the sameKUO CHIH-WEI·Filed 2012·Granted Oct 27, 2015·45 cites·20 claims
- 0294US9000536B2Fin field effect transistor having a highly doped regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 7, 2015·19 cites·20 claims
- 0394US8659032B2FinFET and method of fabricating the sameCHAO DONALD Y·Filed 2012·Granted Feb 25, 2014·22 cites·20 claims
- 0491US9941368B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·7 cites·20 claims
- 0590US9634104B2FinFET and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·5 cites·19 claims
- 0688US9515167B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 0786US9166044B2Raised epitaxial LDD in MuGFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·5 cites·20 claims
- 0885US9166053B2FinFET device including a stepped profile structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·6 cites·20 claims
- 0984US10014223B2Multi-gate devices with replaced-channels and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 3, 2018·3 cites·20 claims
- 1083US9053934B2Finfet and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 9, 2015·4 cites·20 claims
- 1182US8030718B2Local charge and work function engineering on MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 4, 2011·8 cites·14 claims
- 1280US8216903B2SRAM cell with asymmetrical pass gateHOUSTON THEODORE W·Filed 2005·Granted Jul 10, 2012·5 cites·8 claims
- 1379US7384839B2SRAM cell with asymmetrical transistors for reduced leakageTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 10, 2008·5 cites·10 claims
- 1478US9514991B2Method of manufacturing a FinFET device having a stepped profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·2 cites·20 claims
- 1578US8211773B2SRAM cell with asymmetrical pass gateHOUSTON THEODORE W·Filed 2009·Granted Jul 3, 2012·4 cites·4 claims
- 1676US8258587B2Transistor performance with metal gateMASUOKA YURI·Filed 2009·Granted Sep 4, 2012·7 cites·23 claims
- 1775US11489054B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 1870US8956931B2Method for fabricating a multi-gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 17, 2015·2 cites·20 claims
- 1967US10840346B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 2065US8679926B2Local charge and work function engineering on MOSFETHUANG HUAN-TSUNG·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 2164US9431397B2Method for fabricating a multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·1 cites·19 claims
- 2262US10516024B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 2359US10978355B2Multi-gate devices with replaced-channels and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 13, 2021·0 cites·20 claims
- 2457US7692217B2Matched analog CMOS transistors with extension wellsTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 6, 2010·1 cites·19 claims
- 2555US2024105851A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2654US2008237745A1Sram cell with asymmetrical transistors for reduced leakageTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2751US9317647B2Method of designing a circuit and system for implementing the methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·0 cites·20 claims
- 2851US2012261768A1Sram cell with asymmetrical pass gateHOUSTON THEODORE W·Filed 2012·Application pending·0 cites
- 2950US2008315328A1Dual poly deposition and through gate oxide implantsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 3046US7435638B2Dual poly deposition and through gate oxide implantsTEXAS INSTRUMENTS INC·Filed 2006·Granted Oct 14, 2008·0 cites·16 claims
- 3143US6956398B1Leakage current reduction methodTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 18, 2005·2 cites·8 claims
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