Inventor · disambiguated record
Daniel Jenner Lichtenwalner
Also filed as: LICHTENWALNER DANIEL · LICHTENWALNER DANIEL J · LICHTENWALNER DANIEL JENNER
52 granted patents·17 pending applications·142 citations·filing 2009–2024
97Inventor score
Top patents by PatentIndex Score
69 records- 0198US9887287B1Power semiconductor devices having gate trenches with implanted sidewalls and related methodsCREE INC·Filed 2016·Granted Feb 6, 2018·86 cites·22 claims
- 0296US11610991B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2020·Granted Mar 21, 2023·7 cites·22 claims
- 0394US11769827B2Power transistor with soft recovery body diodeWOLFSPEED INC·Filed 2020·Granted Sep 26, 2023·3 cites·26 claims
- 0493US11075264B2Super junction power semiconductor devices formed via ion implantation channeling techniques and related methodsCREE INC·Filed 2016·Granted Jul 27, 2021·8 cites·21 claims
- 0592US9741842B2Vertical power transistor deviceCREE INC·Filed 2016·Granted Aug 22, 2017·6 cites·20 claims
- 0690US11563080B2Trenched power device with segmented trench and shieldingWOLFSPEED INC·Filed 2020·Granted Jan 24, 2023·2 cites·27 claims
- 0789US9331197B2Vertical power transistor deviceCREE INC·Filed 2013·Granted May 3, 2016·7 cites·25 claims
- 0885US12376319B2Support shield structures for trenched semiconductor devicesWOLFSPEED INC·Filed 2022·Granted Jul 29, 2025·1 cites·34 claims
- 0985USRE49913EVertical power transistor deviceWOLFSPEED INC·Filed 2020·Granted Apr 9, 2024·1 cites·38 claims
- 1085US10861931B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsCREE INC·Filed 2016·Granted Dec 8, 2020·3 cites·21 claims
- 1184US11664434B2Semiconductor power devices having multiple gate trenches and methods of forming such devicesCREE INC·Filed 2020·Granted May 30, 2023·1 cites·34 claims
- 1284US9972677B2Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewallsCREE INC·Filed 2016·Granted May 15, 2018·3 cites·20 claims
- 1383US9515199B2Power semiconductor devices having superjunction structures with implanted sidewallsCREE INC·Filed 2015·Granted Dec 6, 2016·3 cites·20 claims
- 1477US12159909B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2023·Granted Dec 3, 2024·0 cites·18 claims
- 1577USRE48380EVertical power transistor deviceCREE INC·Filed 2018·Granted Jan 5, 2021·1 cites·32 claims
- 1674US12087854B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2022·Granted Sep 10, 2024·0 cites·28 claims
- 1774US11682709B2Interface layer control methods for semiconductor power devices and semiconductor devices formed thereofWOLFSPEED INC·Filed 2022·Granted Jun 20, 2023·0 cites·23 claims
- 1874US9396946B2Wet chemistry processes for fabricating a semiconductor device with increased channel mobilityDHAR SARIT·Filed 2011·Granted Jul 19, 2016·3 cites·30 claims
- 1974US9111919B2Field effect device with enhanced gate dielectric structureCREE INC·Filed 2013·Granted Aug 18, 2015·3 cites·29 claims
- 2074US2024413197A1Sidewall dopant shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2173US12289906B2Vertical power devices fabricated using implanted methodsWOLFSPEED INC·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 2273US2024266432A1Power transistor with soft recovery body diodeWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2373US2024395927A1Power semiconductor devices including angled gate trenchesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2473US2024290832A1Edge termination for power semiconductor devices and related fabrication methodsWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2571US12278284B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2023·Granted Apr 15, 2025·0 cites·26 claims
- 2671US11837657B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2023·Granted Dec 5, 2023·0 cites·23 claims
- 2770US12279448B2Trench bottom shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2022·Granted Apr 15, 2025·0 cites·19 claims
- 2870US12009389B2Edge termination for power semiconductor devices and related fabrication methodsWOLFSPEED INC·Filed 2021·Granted Jun 11, 2024·0 cites·32 claims
- 2969US12057389B2Transistor semiconductor die with increased active areaWOLFSPEED INC·Filed 2021·Granted Aug 6, 2024·0 cites·23 claims
- 3069US11929420B2Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devicesWOLFSPEED INC·Filed 2022·Granted Mar 12, 2024·0 cites·23 claims
- 3169US10847647B2Power semiconductor devices having top-side metallization structures that include buried grain stop layersCREE INC·Filed 2019·Granted Nov 24, 2020·1 cites·28 claims
- 3269US2023261073A1Semiconductor power devices having multiple gate trenches and methods of forming such devicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3368US11791378B2Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methodsWOLFSPEED INC·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 3468US2023369486A1Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3567US11869948B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·31 claims
- 3667US9570570B2Enhanced gate dielectric for a field effect device with a trenched gateCREE INC·Filed 2013·Granted Feb 14, 2017·2 cites·21 claims
- 3766US12080790B2Power semiconductor devices including angled gate trenchesWOLFSPEED INC·Filed 2021·Granted Sep 3, 2024·0 cites·25 claims
- 3866US11990543B2Power transistor with soft recovery body diodeWOLFSPEED INC·Filed 2021·Granted May 21, 2024·0 cites·31 claims
- 3966US11837629B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsWOLFSPEED INC·Filed 2020·Granted Dec 5, 2023·0 cites·21 claims
- 4066US11276762B2Interface layer control methods for semiconductor power devices and semiconductor devices formed thereofWOLFSPEED INC·Filed 2020·Granted Mar 15, 2022·0 cites·33 claims
- 4165US11489069B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Nov 1, 2022·0 cites·32 claims
- 4265US11355630B2Trench bottom shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 4364US11417760B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Aug 16, 2022·0 cites·15 claims
- 4462US11894455B2Vertical power devices fabricated using implanted methodsWOLFSPEED INC·Filed 2021·Granted Feb 6, 2024·0 cites·31 claims
- 4562US11563101B2Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted Jan 24, 2023·0 cites·21 claims
- 4661US12408360B2Vertical power devices having mesas and etched trenches therebetweenWOLFSPEED INC·Filed 2022·Granted Sep 2, 2025·0 cites·23 claims
- 4761US11640990B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted May 2, 2023·0 cites·24 claims
- 4860US12094926B2Sidewall dopant shielding methods and approaches for trenched semiconductor device structuresCREE INC·Filed 2020·Granted Sep 17, 2024·0 cites·19 claims
- 4960US11764295B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2020·Granted Sep 19, 2023·0 cites·21 claims
- 5060US9236433B2Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layerCREE INC·Filed 2013·Granted Jan 12, 2016·1 cites·25 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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