Inventor · disambiguated record
N. Johan Knall
Also filed as: KNALL N JOHAN
41 granted patents·2 pending applications·4,214 citations·filing 1996–2005
99Inventor score
Files withMATRIX SEMICONDUCTOR INC21CANDESCENT TECH CORP13SANDISK 3D LLC5JOHNSON MARK G1SANDISK CORP1
Top patents by PatentIndex Score
43 records- 0199US6952043B2Electrically isolated pillars in active devicesMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 4, 2005·218 cites·9 claims
- 0299US6888750B2Nonvolatile memory on SOI and compound semiconductor substrates and method of fabricationMATRIX SEMICONDUCTOR INC·Filed 2001·Granted May 3, 2005·497 cites·20 claims
- 0399US6631085B2Three-dimensional memory array incorporating serial chain diode stackMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Oct 7, 2003·278 cites·56 claims
- 0499US6627530B2Patterning three dimensional structuresMATRIX SEMICONDUCTOR INC·Filed 2000·Granted Sep 30, 2003·385 cites·30 claims
- 0599US6420215B1Three-dimensional memory array and method of fabricationMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 16, 2002·1.2k cites·22 claims
- 0698US6653712B2Three-dimensional memory array and method of fabricationMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 25, 2003·197 cites·66 claims
- 0798US6515888B2Low cost three-dimensional memory arrayMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Feb 4, 2003·232 cites·75 claims
- 0897US6822903B2Apparatus and method for disturb-free programming of passive element memory cellsMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 23, 2004·118 cites·47 claims
- 0997US6541312B2Formation of antifuse structure in a three dimensional memoryMATRIX SEMICONDUCTOR INC·Filed 2000·Granted Apr 1, 2003·121 cites·58 claims
- 1096US6777773B2Memory cell with antifuse layer formed at diode junctionMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 17, 2004·109 cites·8 claims
- 1195US7022572B2Manufacturing method for integrated circuit having disturb-free programming of passive element memory cellsMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 4, 2006·71 cites·25 claims
- 1295US6486065B2Method of forming nonvolatile memory device utilizing a hard maskMATRIX SEMICONDUCTOR INC·Filed 2000·Granted Nov 26, 2002·107 cites·24 claims
- 1394US7304888B2Reverse-bias method for writing memory cells in a memory arraySANDISK 3D LLC·Filed 2005·Granted Dec 4, 2007·37 cites·28 claims
- 1493US6704235B2Anti-fuse memory cell with asymmetric breakdown voltageMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 9, 2004·81 cites·39 claims
- 1592US6954394B2Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditionsMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 11, 2005·71 cites·41 claims
- 1692US6490218B1Digital memory method and system for storing multiple bit digital dataMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 3, 2002·71 cites·19 claims
- 1788US6004180ACleaning of electron-emissive elementsCANDESCENT TECH CORP·Filed 1997·Granted Dec 21, 1999·58 cites·60 claims
- 1887US6642603B1Same conductivity type highly-doped regions for antifuse memory cellMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 4, 2003·43 cites·20 claims
- 1986US6767816B2Method for making a three-dimensional memory array incorporating serial chain diode stackMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 27, 2004·27 cites·20 claims
- 2083US6007695ASelective removal of material using self-initiated galvanic activity in electrolytic bathCANDESCENT TECH CORP·Filed 1997·Granted Dec 28, 1999·41 cites·53 claims
- 2179US7071565B2Patterning three dimensional structuresSANDISK 3D LLC·Filed 2002·Granted Jul 4, 2006·17 cites·16 claims
- 2277US6963504B2Apparatus and method for disturb-free programming of passive element memory cellsMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 8, 2005·18 cites·38 claims
- 2374US5920151AStructure and fabrication of electron-emitting device having focus coating contacted through underlying access conductorCANDESCENT TECH CORP·Filed 1997·Granted Jul 6, 1999·26 cites·37 claims
- 2471US6770939B2Thermal processing for three dimensional circuitsMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 3, 2004·13 cites·24 claims
- 2569US7413945B2Electrically isolated pillars in active devicesSANDISK 3D LLC·Filed 2003·Granted Aug 19, 2008·8 cites·41 claims
- 2668US6019658AFabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elementsCANDESCENT TECH CORP·Filed 1998·Granted Feb 1, 2000·17 cites·34 claims
- 2767US6624011B1Thermal processing for three dimensional circuitsMATRIX SEMICONDUCTOR INC·Filed 2000·Granted Sep 23, 2003·11 cites·26 claims
- 2865US6013986AElectron-emitting device having multi-layer resistorCANDESCENT TECH CORP·Filed 1997·Granted Jan 11, 2000·17 cites·32 claims
- 2965US6008062AUndercutting technique for creating coating in spaced-apart segmentsCANDESCENT TECH CORP·Filed 1997·Granted Dec 28, 1999·17 cites·44 claims
- 3064US5863233AField emitter fabrication using open circuit electrochemical lift offCANDESCENT TECH CORP·Filed 1997·Granted Jan 26, 1999·17 cites·23 claims
- 3163US5865659AFabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elementsCANDESCENT TECH CORP·Filed 1996·Granted Feb 2, 1999·14 cites·28 claims
- 3261US6768185B2Formation of antifuse structure in a three dimensional memoryMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 27, 2004·8 cites·16 claims
- 3361US6187603B1Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter materialCANDESCENT TECH CORP·Filed 1996·Granted Feb 13, 2001·15 cites·38 claims
- 3456US6013974AElectron-emitting device having focus coating that extends partway into focus openingsCANDESCENT TECH CORP·Filed 1997·Granted Jan 11, 2000·11 cites·56 claims
- 3555US7245000B2Electrically isolated pillars in active devicesSANDISK CORP·Filed 2003·Granted Jul 17, 2007·4 cites·3 claims
- 3654US7816188B2Process for fabricating a dielectric film using plasma oxidationSANDISK 3D LLC·Filed 2001·Granted Oct 19, 2010·5 cites·88 claims
- 3754US7091529B2Three-dimensional memory array and method of fabricationSANDISK 3D LLC·Filed 2004·Granted Aug 15, 2006·4 cites·6 claims
- 3848US5893967AImpedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting deviceCANDESCENT TECH CORP·Filed 1997·Granted Apr 13, 1999·8 cites·40 claims
- 3945US6010383AProtection of electron-emissive elements prior to removing excess emitter material during fabrication of electron-emitting deviceCANDESCENT TECH CORP·Filed 1997·Granted Jan 4, 2000·6 cites·24 claims
- 4042US8575719B2Silicon nitride antifuse for use in diode-antifuse memory arraysJOHNSON MARK G·Filed 2003·Granted Nov 5, 2013·1 cites·5 claims
- 4139US2004089917A1Three-dimensional memory array and method of fabricationFiled 2003·Application pending·0 cites
- 4236US2003026157A1Anti-fuse memory cell with asymmetric breakdown voltageFiled 2001·Application pending·0 cites
- 4334US6027632AMulti-step removal of excess emitter material in fabricating electron-emitting deviceCANDESCENT TECH CORP·Filed 1997·Granted Feb 22, 2000·3 cites·22 claims
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