Inventor · disambiguated record
Thomas Gutt
Also filed as: GUTT THOMAS
16 granted patents·1 pending application·65 citations·filing 2003–2017
91Inventor score
Files withINFINEON TECHNOLOGIES AG8INFINEON TECHNOLOGIES AUSTRIA3RUPP ROLAND2INFINEON TECHNOLOGIES AUSTRIA AG1INFINEON TECHNOLOIGES AG1
Top patents by PatentIndex Score
17 records- 0193US9613805B1Method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 4, 2017·9 cites·22 claims
- 0292US7842590B2Method for manufacturing a semiconductor substrate including laser annealingINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 30, 2010·23 cites·21 claims
- 0382US9209109B2IGBT with emitter electrode electrically connected with an impurity zoneINFINEON TECHNOLOIGES AG·Filed 2013·Granted Dec 8, 2015·7 cites·23 claims
- 0482US8450196B2Production of an integrated circuit including electrical contact on SiCRUPP ROLAND·Filed 2007·Granted May 28, 2013·7 cites·5 claims
- 0578US8011319B2Method for oxidizing a layer, and associated holding devices for a substrateINFINEON TECHNOLOGIES AG·Filed 2009·Granted Sep 6, 2011·5 cites·7 claims
- 0676US10347490B2Production of an integrated circuit including electrical contact on SiCINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 9, 2019·1 cites·19 claims
- 0773US7851913B2Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apartINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 14, 2010·6 cites·37 claims
- 0859US9240450B2IGBT with emitter electrode electrically connected with impurity zoneINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 19, 2016·1 cites·13 claims
- 0959US2015041831A1PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiCINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 1058US7723158B2Method for producing and cleaning surface-mountable bases with external contactsINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 25, 2010·2 cites·37 claims
- 1157US8895422B2Production of an integrated circuit including electrical contact on SiCINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 25, 2014·0 cites·7 claims
- 1256US9634108B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 25, 2017·0 cites·12 claims
- 1356US9391154B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 12, 2016·0 cites·14 claims
- 1454US7615499B2Method for oxidizing a layer, and associated holding devices for a substrateINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 10, 2009·4 cites·16 claims
- 1552US9209281B2Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etchingRUPP ROLAND·Filed 2007·Granted Dec 8, 2015·0 cites·25 claims
- 1643US8475326B2Outer plate carrierNOEHL OLIVER·Filed 2012·Granted Jul 2, 2013·0 cites·11 claims
- 1738US8541892B2Bonding connection between a bonding wire and a power semiconductor chipSIEPE DIRK·Filed 2010·Granted Sep 24, 2013·0 cites·20 claims
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