Inventor · disambiguated record
Martin Alter
Also filed as: ALTER MARTIN · ALTER MARTIN J
32 granted patents·8 pending applications·984 citations·filing 1976–2013
98Inventor score
Top patents by PatentIndex Score
40 records- 0198US7315052B2Power FET with embedded body pickupMICREL INC·Filed 2006·Granted Jan 1, 2008·159 cites·10 claims
- 0294US4914546AStacked multi-polysilicon layer capacitorMICREL INC·Filed 1989·Granted Apr 3, 1990·91 cites·19 claims
- 0392US5447876AMethod of making a diamond shaped gate mesh for cellular MOS transistor arrayMICREL INC·Filed 1994·Granted Sep 5, 1995·137 cites·10 claims
- 0490US5355008ADiamond shaped gate mesh for cellular MOS transistor arrayMICREL INC·Filed 1993·Granted Oct 11, 1994·115 cites·19 claims
- 0589US7501693B2LDO regulator with ground connection through package bottomMICREL INC·Filed 2006·Granted Mar 10, 2009·18 cites·8 claims
- 0689US5517046AHigh voltage lateral DMOS device with enhanced drift regionMICREL INC·Filed 1995·Granted May 14, 1996·126 cites·20 claims
- 0788US7195952B2Schottky diode device with aluminum pickup of backside cathodeMICREL INC·Filed 2005·Granted Mar 27, 2007·22 cites·13 claims
- 0884US7145211B2Seal ring for mixed circuitry semiconductor devicesMICREL INC·Filed 2004·Granted Dec 5, 2006·26 cites·2 claims
- 0981US4979001AHidden zener diode structure in configurable integrated circuitMICREL INC·Filed 1989·Granted Dec 18, 1990·36 cites·37 claims
- 1079US5439764AMask having multiple patternsMICREL INC·Filed 1993·Granted Aug 8, 1995·38 cites·22 claims
- 1178US7843019B2Seal ring for mixed circuitry semiconductor devicesMICREL INC·Filed 2006·Granted Nov 30, 2010·6 cites·8 claims
- 1278US6621138B1Zener-like trim device in polysiliconMICREL INC·Filed 2002·Granted Sep 16, 2003·26 cites·43 claims
- 1375US7087973B2Ballast resistors for transistor devicesMICREL INC·Filed 2003·Granted Aug 8, 2006·21 cites·5 claims
- 1472US6395591B1Selective substrate implant process for decoupling analog and digital groundsMICREL INC·Filed 2000·Granted May 28, 2002·21 cites·17 claims
- 1571US6900538B2Integrating chip scale packaging metallization into integrated circuit die structuresMICREL INC·Filed 2004·Granted May 31, 2005·15 cites·7 claims
- 1666US7485549B2Seal ring for mixed circuitry semiconductor devicesMICREL INC·Filed 2006·Granted Feb 3, 2009·2 cites·2 claims
- 1765US8525257B2LDMOS transistor with asymmetric spacer as gateALTER MARTIN·Filed 2009·Granted Sep 3, 2013·3 cites·9 claims
- 1864US8227860B2System for vertical DMOS with slotsALTER MARTIN·Filed 2009·Granted Jul 24, 2012·3 cites·12 claims
- 1963US7960754B2Diode having high breakdown voltage and low on-resistanceMICREL INC·Filed 2009·Granted Jun 14, 2011·2 cites·19 claims
- 2063US6917105B2Integrating chip scale packaging metallization into integrated circuit die structuresMICREL INC·Filed 2003·Granted Jul 12, 2005·11 cites·9 claims
- 2157US5045966AMethod for forming capacitor using FET process and structure formed by sameMICREL SEMICONDUCTOR·Filed 1990·Granted Sep 3, 1991·21 cites·25 claims
- 2252US7211893B2Integrating chip scale packaging metallization into integrated circuit die structuresMICREL INC·Filed 2004·Granted May 1, 2007·4 cites·13 claims
- 2352US5439841AHigh value gate leakage resistorMICREL INC·Filed 1994·Granted Aug 8, 1995·12 cites·7 claims
- 2452US5254486AMethod for forming PNP and NPN bipolar transistors in the same substrateMICREL INC·Filed 1992·Granted Oct 19, 1993·14 cites·8 claims
- 2551US5589702AHigh value gate leakage resistorMICREL INC·Filed 1995·Granted Dec 31, 1996·11 cites·22 claims
- 2651US5034346AMethod for forming shorting contact for semiconductor which allows for relaxed alignment toleranceMICREL INC·Filed 1990·Granted Jul 23, 1991·20 cites·5 claims
- 2749US8889518B2LDMOS transistor with asymmetric spacer as gateMICREL INC·Filed 2013·Granted Nov 18, 2014·0 cites·7 claims
- 2848US6711046B1Programmable optical arrayMICREL INC·Filed 2001·Granted Mar 23, 2004·5 cites·62 claims
- 2945US2007138648A1Schottky Diode Device with Aluminum Pickup of Backside CathodeMICREL INC·Filed 2007·Application pending·0 cites
- 3045US2010032753A1MOS Transistor Including Extended NLDD Source-Drain Regions For Improved RuggednessMICREL INC·Filed 2009·Application pending·0 cites
- 3144US7586132B2Power FET with low on-resistance using merged metal layersMICREL INC·Filed 2007·Granted Sep 8, 2009·0 cites·10 claims
- 3244US4951101ADiamond shorting contact for semiconductorsMICREL INC·Filed 1988·Granted Aug 21, 1990·12 cites·6 claims
- 3344US2008185682A1High Voltage Metal-On-Passivation CapacitorMICREL INC·Filed 2007·Application pending·0 cites
- 3443US7573098B2Transistors fabricated using a reduced cost CMOS processMICREL INC·Filed 2007·Granted Aug 11, 2009·0 cites·9 claims
- 3543US2009283843A1NMOS Transistor Including Extended NLDD-Drain For Improved RuggednessMICREL INC·Filed 2008·Application pending·0 cites
- 3642US2009026578A1Vertical NPN Transistor Fabricated in a CMOS Process With Improved Electrical CharacteristicsMICREL INC·Filed 2007·Application pending·0 cites
- 3742US2005127505A1Semiconductor devices integrated with wafer-level packagingFiled 2004·Application pending·0 cites
- 3840US2005046022A1Semiconductor devices integrated with wafer-level packagingMICREL INC·Filed 2003·Application pending·0 cites
- 3939US4149177AMethod of fabricating conductive buried regions in integrated circuits and the resulting structuresFAIRCHILD CAMERA INSTR CO·Filed 1976·Granted Apr 10, 1979·7 cites·42 claims
- 4039US2007246790A1Transistor process using a double-epitaxial layer for reduced capacitanceMICREL INC·Filed 2006·Application pending·0 cites
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