Inventor · disambiguated record
Takashi Sakoh
Also filed as: SAKOH TAKASHI
22 granted patents·4 pending applications·373 citations·filing 1995–2021
95Inventor score
Files withNEC ELECTRONICS CORP9NEC CORP7RENESAS ELECTRONICS CORP6SAKOH TAKASHI2SONY SEMICONDUCTOR SOLUTIONS CORP1
Top patents by PatentIndex Score
26 records- 0193US5641991ASemiconductor device containing conductor plug that can reduce contact resistanceNEC CORP·Filed 1995·Granted Jun 24, 1997·177 cites·19 claims
- 0290US7323760B2Fuse structure for semiconductor integrated circuit with improved insulation film thickness uniformity and moisture resistanceNEC ELECTRONICS CORP·Filed 2005·Granted Jan 29, 2008·19 cites·21 claims
- 0386US10263066B2Memory and logic device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 16, 2019·9 cites·19 claims
- 0486US7199420B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Apr 3, 2007·14 cites·6 claims
- 0582US8143119B2Method of manufacturing semiconductor device having plural transistors formed in well region and semiconductor deviceSAKOH TAKASHI·Filed 2009·Granted Mar 27, 2012·10 cites·9 claims
- 0681US7986012B2Semiconductor device and process for manufacturing sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jul 26, 2011·8 cites·5 claims
- 0777US6172389B1Semiconductor memory device having a reduced area for a resistor elementNEC CORP·Filed 1999·Granted Jan 9, 2001·39 cites·7 claims
- 0876US7432597B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Oct 7, 2008·7 cites·9 claims
- 0974US7579266B2Fuse structure for semiconductor integrated circuit with improved insulation film thickness uniformity and moisture resistanceNEC ELECTRONICS CORP·Filed 2007·Granted Aug 25, 2009·5 cites·8 claims
- 1073US5858837AMethod of manufacturing semiconductor memory deviceNEC CORP·Filed 1997·Granted Jan 12, 1999·35 cites·12 claims
- 1170US7638369B2Semiconductor chip and method of fabricating the sameNEC ELECTRONICS CORP·Filed 2006·Granted Dec 29, 2009·4 cites·1 claims
- 1268US6858916B2Semiconductor memory device with series-connected antifuse-componentsNEC ELECTRONICS CORP·Filed 2003·Granted Feb 22, 2005·14 cites·16 claims
- 1365US6384444B2Semiconductor device including capacitive element of an analog circuitNEC CORP·Filed 2000·Granted May 7, 2002·12 cites·7 claims
- 1464US7829925B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Granted Nov 9, 2010·3 cites·16 claims
- 1559US7974137B2Semiconductor memory deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jul 5, 2011·1 cites·8 claims
- 1654US2023238771A1Electronic deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Application pending·0 cites
- 1751US7826272B2Semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2007·Granted Nov 2, 2010·2 cites·18 claims
- 1847US2011263113A1Method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 1945US2011255332A1Semiconductor memory deviceRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2044US8299543B2Method of manufacturing semiconductor device having plural transistors formed in well region and semiconductor deviceSAKOH TAKASHI·Filed 2012·Granted Oct 30, 2012·0 cites·2 claims
- 2144US6020092APartial one-shot electron beam exposure mask and method of forming a partial one-shot electron beam exposure patternNEC CORP·Filed 1998·Granted Feb 1, 2000·6 cites·11 claims
- 2242US7737481B2Semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2008·Granted Jun 15, 2010·0 cites·14 claims
- 2339US7898888B2Semiconductor memory device having memory cell and reference cell connected to same sense amplifier and method of reading data thereofRENESAS ELECTRONICS CORP·Filed 2008·Granted Mar 1, 2011·0 cites·6 claims
- 2438US5824591AMethod for manufacturing a stacked capacitorNEC CORP·Filed 1997·Granted Oct 20, 1998·6 cites·16 claims
- 2531US5968692AIntegrated circuit pattern lithography method capable of reducing the number of shots in partial batch exposureNEC CORP·Filed 1998·Granted Oct 19, 1999·2 cites·5 claims
- 2628US2001044182A1Semiconductor device having hsg polycrystalline silicon layerFiled 1998·Application pending·0 cites
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