Inventor · disambiguated record
Hidemitsu Mori
Also filed as: MORI HIDEMITSU
13 granted patents·1 pending application·428 citations·filing 1996–2009
93Inventor score
Top patents by PatentIndex Score
14 records- 0193US8148774B2Method of fabricating semiconductor device with a high breakdown voltage between neighboring wellsMORI HIDEMITSU·Filed 2009·Granted Apr 3, 2012·115 cites·11 claims
- 0293US6030894AMethod for manufacturing a semiconductor device having contact plug made of Si/SiGe/SiNEC CORP·Filed 1998·Granted Feb 29, 2000·131 cites·7 claims
- 0375US5808365ASemiconductor device and method of manufacturing the sameNEC CORP·Filed 1997·Granted Sep 15, 1998·43 cites·16 claims
- 0473US5909059ASemiconductor device having contact plug and method for manufacturing the sameNEC CORP·Filed 1997·Granted Jun 1, 1999·37 cites·8 claims
- 0565US5895948ASemiconductor device and fabrication process thereofNEC CORP·Filed 1997·Granted Apr 20, 1999·32 cites·14 claims
- 0663US6730955B2Semiconductor memory and process for fabricating the sameNEC ELECTRONICS CORP·Filed 2002·Granted May 4, 2004·11 cites·28 claims
- 0761US6534358B2Method of fabricating semiconductor device having ferroelectric capacitorNEC CORP·Filed 2001·Granted Mar 18, 2003·8 cites·10 claims
- 0861US5838036ASemiconductor memory device capable of realizing a minimum memory cell area approximate to a theoretical valueNEC CORP·Filed 1996·Granted Nov 17, 1998·19 cites·5 claims
- 0960US6384440B1Ferroelectric memory including ferroelectric capacitor, one of whose electrodes is connected to metal silicide filmNEC CORP·Filed 2000·Granted May 7, 2002·9 cites·11 claims
- 1051US6887752B2Semiconductor memory and process for fabricating the sameNEC ELECTRONICS CORP·Filed 2003·Granted May 3, 2005·5 cites·11 claims
- 1141US6127231AMethod of making transistors in an IC including memory cellsNEC CORP·Filed 1998·Granted Oct 3, 2000·7 cites·27 claims
- 1238US6162676AMethod of making a semiconductor device with an etching stopperNEC CORP·Filed 1998·Granted Dec 19, 2000·7 cites·2 claims
- 1337US5946570AProcess for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layerNEC CORP·Filed 1997·Granted Aug 31, 1999·4 cites·12 claims
- 1434US2004021222A1Semiconductor memory device and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →