Inventor · disambiguated record
Hiromi Kawashima
Also filed as: KAWASHIMA HIROMI
23 granted patents·1 pending application·533 citations·filing 1983–2002
97Inventor score
Files withFUJITSU LTD24
Top patents by PatentIndex Score
24 records- 0195US5608670AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Mar 4, 1997·66 cites·8 claims
- 0294US5452251ASemiconductor memory device for selecting and deselecting blocks of word linesFUJITSU LTD·Filed 1993·Granted Sep 19, 1995·70 cites·6 claims
- 0388US5576637AXOR CMOS logic gateFUJITSU LTD·Filed 1995·Granted Nov 19, 1996·40 cites·1 claims
- 0484US4601020ASemiconductor memory deviceFUJITSU LTD·Filed 1983·Granted Jul 15, 1986·37 cites·9 claims
- 0582US4937830ASemiconductor memory device having function of checking and correcting error of read-out dataFUJITSU LTD·Filed 1988·Granted Jun 26, 1990·70 cites·10 claims
- 0680US4812680AHigh voltage detecting circuitFUJITSU LTD·Filed 1987·Granted Mar 14, 1989·27 cites·3 claims
- 0777US4584494ASemiconductor timerFUJITSU LTD·Filed 1983·Granted Apr 22, 1986·21 cites·14 claims
- 0876US5770963AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Jun 23, 1998·19 cites·2 claims
- 0975US5592419AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Jan 7, 1997·23 cites·1 claims
- 1072US5666314ASemiconductor memory device for selecting and deselecting blocks of word linesFUJITSU LTD·Filed 1995·Granted Sep 9, 1997·18 cites·5 claims
- 1161US5631597ANegative voltage circuit for a flash memoryFUJITSU LTD·Filed 1995·Granted May 20, 1997·10 cites·5 claims
- 1261US5173876AElectrically erasable and programmable non-volatile semiconductor memory deviceFUJITSU LTD·Filed 1990·Granted Dec 22, 1992·23 cites·6 claims
- 1359US4773046ASemiconductor device having fuse circuit and detecting circuit for detecting states of fuses in the fuse circuitFUJITSU LTD·Filed 1987·Granted Sep 20, 1988·17 cites·4 claims
- 1458US4817055ASemiconductor memory circuit including bias voltage generatorFUJITSU LTD·Filed 1986·Granted Mar 28, 1989·16 cites·11 claims
- 1557US5428580ANonvolatile semiconductor memory having an address-transition-detection circuitFUJITSU LTD·Filed 1994·Granted Jun 27, 1995·17 cites·6 claims
- 1654US4644182ADelay circuit having delay time period determined by discharging operationFUJITSU LTD·Filed 1985·Granted Feb 17, 1987·14 cites·5 claims
- 1753US5815440ASemiconductor memory device with electrically controllable threshold voltageFUJITSU LTD·Filed 1997·Granted Sep 29, 1998·7 cites·3 claims
- 1853US5111136ASemiconductor circuitFUJITSU LTD·Filed 1991·Granted May 5, 1992·15 cites·7 claims
- 1952US6288945B1Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 1999·Granted Sep 11, 2001·7 cites·2 claims
- 2047US4744058ASemiconductor programmable memory device and method of writing a predetermined pattern to sameFUJITSU LTD·Filed 1986·Granted May 10, 1988·9 cites·12 claims
- 2139US5249156ASemiconductor memory device having non-volatile and volatile memory cellsFUJITSU LTD·Filed 1991·Granted Sep 28, 1993·7 cites·12 claims
- 2236US6611464B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted Aug 26, 2003·0 cites·3 claims
- 2336US6563738B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted May 13, 2003·0 cites·4 claims
- 2435US2003198083A1Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Application pending·0 cites
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