Inventor · disambiguated record
Nobuaki Takashina
Also filed as: TAKASHINA NOBUAKI
11 granted patents·1 pending application·290 citations·filing 1991–2002
92Inventor score
Files withFUJITSU LTD12
Top patents by PatentIndex Score
12 records- 0194US5452251ASemiconductor memory device for selecting and deselecting blocks of word linesFUJITSU LTD·Filed 1993·Granted Sep 19, 1995·70 cites·6 claims
- 0292US6646920B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted Nov 11, 2003·38 cites·4 claims
- 0381US5959887AElectrically erasable programmable nonvolatile semiconductor memory having dual operation functionFUJITSU LTD·Filed 1998·Granted Sep 28, 1999·47 cites·17 claims
- 0480US5463583ANon-volatile semiconductor memory deviceFUJITSU LTD·Filed 1994·Granted Oct 31, 1995·48 cites·4 claims
- 0572US5666314ASemiconductor memory device for selecting and deselecting blocks of word linesFUJITSU LTD·Filed 1995·Granted Sep 9, 1997·18 cites·5 claims
- 0669US5406524ANonvolatile semiconductor memory that eases the dielectric strength requirementsFUJITSU LTD·Filed 1994·Granted Apr 11, 1995·24 cites·4 claims
- 0768US5237530AFrasable non-volatile semiconductor memory device having read/write test functionFUJITSU LTD·Filed 1991·Granted Aug 17, 1993·28 cites·12 claims
- 0853US5815440ASemiconductor memory device with electrically controllable threshold voltageFUJITSU LTD·Filed 1997·Granted Sep 29, 1998·7 cites·3 claims
- 0948US5581107ANonvolatile semiconductor memory that eases the dielectric strength requirementsFUJITSU LTD·Filed 1994·Granted Dec 3, 1996·10 cites·12 claims
- 1036US6611464B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted Aug 26, 2003·0 cites·3 claims
- 1136US6563738B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted May 13, 2003·0 cites·4 claims
- 1235US2003198083A1Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Application pending·0 cites
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