Inventor · disambiguated record
Chun-Wen Cheng
Also filed as: CHENG CHUN-WEN · CHENG CHUN-WEN HUNG
248 granted patents·19 pending applications·1,652 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD195TAIWAN SEMICONDUCTOR MFG43UNITED MICROELECTRONICS CORP5LIN CHUNG HSIEN3CHENG CHUN-WEN2
Top patents by PatentIndex Score
267 records- 0199US9394161B2MEMS and CMOS integration with low-temperature bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 19, 2016·225 cites·20 claims
- 0299US9040334B2MEMS integrated pressure sensor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·68 cites·20 claims
- 0398US9796582B1Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·23 cites·20 claims
- 0498US9695039B1Multi-pressure MEMS packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·17 cites·20 claims
- 0598US9656852B2CMOS-MEMS device structure, bonding mesa structure and associated methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·216 cites·17 claims
- 0698US9630837B1MEMS structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 25, 2017·21 cites·20 claims
- 0798US9567208B1Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·17 cites·19 claims
- 0898US9389199B2Backside sensing bioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·82 cites·17 claims
- 0998US9233839B2MEMS device and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 12, 2016·51 cites·17 claims
- 1098US9187317B2MEMS integrated pressure sensor and microphone devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·59 cites·20 claims
- 1198US9085455B2MEMS devices and methods for forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 21, 2015·62 cites·21 claims
- 1298US9080969B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 14, 2015·37 cites·20 claims
- 1398US8728844B1Backside CMOS compatible bioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 20, 2014·140 cites·20 claims
- 1497US9725310B2Micro electromechanical system sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 8, 2017·14 cites·20 claims
- 1597US9689835B2Amplified dual-gate bio field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·26 cites·20 claims
- 1697US9567209B1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 1797US9459234B2CMOS compatible BioFETKALNITSKY ALEXANDER·Filed 2012·Granted Oct 4, 2016·21 cites·16 claims
- 1897US8951716B2Surface modification, functionalization and integration of microfluidics and biosensor to form a biochipTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 10, 2015·14 cites·20 claims
- 1996US9459224B1Gas sensor, integrated circuit device using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·18 cites·17 claims
- 2096US8802473B1MEMS integrated pressure sensor devices having isotropic cavities and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·21 cites·20 claims
- 2195US11987891B2Sensor in an internet-of-thingsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 2295US9976982B2Backside sensing BioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·7 cites·20 claims
- 2395US9919914B2MEMS devices including MEMS dies and connectors theretoTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·9 cites·20 claims
- 2495US9815685B2Semiconductor sensing structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·11 cites·20 claims
- 2595US9791406B2CMOS compatible BioFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·5 cites·20 claims
- 2695US9604840B1MEMS deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 28, 2017·9 cites·20 claims
- 2795US8900905B1MEMS device and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·26 cites·18 claims
- 2894US10508029B2MEMS integrated pressure sensor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·4 cites·19 claims
- 2993US11186481B2Sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 30, 2021·6 cites·19 claims
- 3093US9260296B2MEMS integrated pressure sensor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 16, 2016·5 cites·20 claims
- 3193US8895360B2Integrated semiconductor device and wafer level method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·12 cites·20 claims
- 3293US8486744B2Multiple bonding in wafer level packagingLIN CHUNG-HSIEN·Filed 2010·Granted Jul 16, 2013·11 cites·20 claims
- 3392US10094801B2Amplified dual-gate bio field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·4 cites·20 claims
- 3492US9910009B2CMOS compatible BioFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 6, 2018·3 cites·20 claims
- 3592US9691725B2Integrated semiconductor device and wafer level method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·7 cites·20 claims
- 3692US8952465B2MEMS devices, packaged MEMS devices, and methods of manufacture thereofLIANG KAI-CHIH·Filed 2012·Granted Feb 10, 2015·10 cites·18 claims
- 3792US8647962B2Wafer level packaging bondLIU MARTIN·Filed 2010·Granted Feb 11, 2014·14 cites·13 claims
- 3891US9386380B2Method for the integration of a microelectromechanical systems (MEMS) microphone device with a complementary metal-oxide-semiconductor (CMOS) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·15 cites·20 claims
- 3991US9290376B1MEMS packaging techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 22, 2016·16 cites·20 claims
- 4091US8941152B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·11 cites·20 claims
- 4191US8846416B1Method for forming biochips and biochips with non-organic landings for improved thermal budgetTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·8 cites·20 claims
- 4291US8729646B2MEMS devices and methods for forming the sameCHU CHIA-HUA·Filed 2012·Granted May 20, 2014·9 cites·20 claims
- 4390US10715924B2MEMS microphone having diaphragmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·4 cites·20 claims
- 4490US9981841B2MEMS integrated pressure sensor and microphone devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 29, 2018·5 cites·20 claims
- 4590US9709525B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·29 claims
- 4690US9260295B2MEMS integrated pressure sensor devices having isotropic cavities and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·8 cites·20 claims
- 4790US9121820B2Top-down fabrication method for forming a nanowire transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 1, 2015·11 cites·20 claims
- 4890US9114976B1Semiconductor arrangement with stress release configurationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 25, 2015·8 cites·20 claims
- 4990US8905293B2Self-removal anti-stiction coating for bonding processLIU PING-YIN·Filed 2010·Granted Dec 9, 2014·12 cites·19 claims
- 5090US8716051B2MEMS device with release apertureLIN CHUNG-HSIEN·Filed 2010·Granted May 6, 2014·7 cites·18 claims
Showing the top 50 of 267 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →