Inventor · disambiguated record
Naohiko Kimizuka
Also filed as: KIMIZUKA NAOHIKO
25 granted patents·13 pending applications·134 citations·filing 1997–2024
94Inventor score
Files withSONY SEMICONDUCTOR SOLUTIONS CORP13NEC ELECTRONICS CORP10NEC CORP9KIMIZUKA NAOHIKO1MASUOKA YURI1
Top patents by PatentIndex Score
38 records- 0183US6756635B2Semiconductor substrate including multiple nitrided gate insulating filmsNEC ELECTRONICS CORP·Filed 2002·Granted Jun 29, 2004·42 cites·3 claims
- 0281US12136635B2Imaging element and imaging device with selection and amplication transistor gates formed on same silicon channelSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2023·Granted Nov 5, 2024·0 cites·19 claims
- 0380US6853037B2Fabrication of low power CMOS device with high reliabilityNEC ELECTRONICS CORP·Filed 2001·Granted Feb 8, 2005·27 cites·19 claims
- 0478US12163992B2Charge detection sensor and potential measurement systemSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2023·Granted Dec 10, 2024·0 cites·11 claims
- 0575US8518771B2Method for manufacturing solid-state imaging deviceKIMIZUKA NAOHIKO·Filed 2010·Granted Aug 27, 2013·2 cites·7 claims
- 0674US12046605B2Imaging element and imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Jul 23, 2024·0 cites·17 claims
- 0774US2025098351A1Solid-state imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2024·Application pending·0 cites
- 0872US7238996B2Semiconductor deviceNEC CORP·Filed 2005·Granted Jul 3, 2007·4 cites·10 claims
- 0969US9099365B2Method for manufacturing solid-state imaging deviceSONY CORP·Filed 2013·Granted Aug 4, 2015·0 cites·14 claims
- 1068US7759744B2Semiconductor device having high dielectric constant layers of different thicknessesNEC ELECTRONICS CORP·Filed 2005·Granted Jul 20, 2010·4 cites·1 claims
- 1168US6388504B1Integrated circuit device with switching between active mode and standby mode controlled by digital circuitNEC CORP·Filed 2000·Granted May 14, 2002·12 cites·10 claims
- 1265US7754570B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Jul 13, 2010·2 cites·18 claims
- 1364US7030464B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2004·Granted Apr 18, 2006·9 cites·13 claims
- 1463US11754610B2Charge detection sensor and potential measurement systemSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Sep 12, 2023·0 cites·13 claims
- 1559US12136640B2Solid-state imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Granted Nov 5, 2024·0 cites·32 claims
- 1658US6664148B2Integrated circuit device with switching between active mode and standby mode controlled by digital circuitNEC CORP·Filed 2002·Granted Dec 16, 2003·7 cites·12 claims
- 1756US2025113630A1Semiconductor device and imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Application pending·0 cites
- 1853US11906563B2Electric potential measuring device and method for manufacturing electric potential measuring deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Feb 20, 2024·0 cites·12 claims
- 1952US12349441B2Semiconductor device and semiconductor device manufacturing method, and image capturing deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Granted Jul 1, 2025·0 cites·7 claims
- 2052US11350050B2Semiconductor integrated circuit and imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted May 31, 2022·0 cites·7 claims
- 2149US2023420467A1Solid-state imaging elementSONY GROUP CORP·Filed 2021·Application pending·0 cites
- 2247US6380594B1Semiconductor deviceNEC CORP·Filed 2000·Granted Apr 30, 2002·3 cites·12 claims
- 2347US2024096913A1Solid-state imaging element and method of manufacturing sameSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Application pending·0 cites
- 2446US6969876B2Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Nov 29, 2005·0 cites·5 claims
- 2545US2022149093A1Semiconductor element, semiconductor device, semiconductor element manufacturing method, and semiconductor device manufacturing methodSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 2642US6001737AMethod of forming a semiconductor device having a titanium salicide shallow junction diffusion layerNEC CORP·Filed 1997·Granted Dec 14, 1999·9 cites·12 claims
- 2741US2007284675A1Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2839US6013577AMethod of making an amorphous surface for a gate electrode during the fabrication of a semiconductor deviceNEC CORP·Filed 1998·Granted Jan 11, 2000·7 cites·12 claims
- 2939US2006252264A1Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 3039US2022367545A1Semiconductor device and imaging deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 3138US7033918B2Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor deviceNEC ELECTRONICS CORP·Filed 2003·Granted Apr 25, 2006·0 cites·7 claims
- 3237US7102183B2MOS transistorNEC ELECTRONICS CORP·Filed 2004·Granted Sep 5, 2006·0 cites·20 claims
- 3337US5877082AMethod of manufacturing semiconductor device without plasma damageNEC CORP·Filed 1997·Granted Mar 2, 1999·6 cites·22 claims
- 3437US2005189597A1Semiconductor device featuring multi-layered electrode structureFiled 2005·Application pending·0 cites
- 3536US2006145265A1CMOS semiconductor deviceMASUOKA YURI·Filed 2005·Application pending·0 cites
- 3633US2001018245A1Method for manufacturing semiconductor devicesNEC CORP·Filed 2001·Application pending·0 cites
- 3733US2001031523A1Method of manufacturing semiconductor device having gate insulating films in different thicknessNEC CORP·Filed 2001·Application pending·0 cites
- 3832US2003214001A1Semiconductor device and method for manufacturing the sameFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →