Inventor · disambiguated record
Michael S. Beumer
Also filed as: BEUMER MICHAEL · BEUMER MICHAEL S
2 granted patents·8 pending applications·0 citations·filing 2018–2024
23Inventor score
Files withINTEL CORP10
Top patents by PatentIndex Score
10 records- 0159US2025309100A1Low resistivity conductor subtractively patterned interconnects using layer transfer of microstructure engineered thin filmsINTEL CORP·Filed 2024·Application pending·0 cites
- 0250US12224337B2PGaN enhancement mode HEMTs with dopant diffusion spacerINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·20 claims
- 0348US2024213140A1Integrated circuit structures having backside highINTEL CORP·Filed 2022·Application pending·0 cites
- 0448US2024204059A1Gallium nitride (gan) with interlayers for integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 0547US2024204091A1Low aluminum concentration aluminum gallium nitride interlayer for group iii-nitride (iii-n) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 0647US2024213118A1Gallium nitride (gan) devices with through-silicon viasINTEL CORP·Filed 2022·Application pending·0 cites
- 0745US12439627B2Gate structures to enable lower subthreshold slope in gallium nitride-based transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·25 claims
- 0845US2024021725A1Gallium nitride (gan) transistors with lateral drain depletionINTEL CORP·Filed 2022·Application pending·0 cites
- 0941US2023132548A1Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 1039US2020194577A1Gan based hemt device relaxed buffer structure on siliconINTEL CORP·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →