Inventor · disambiguated record
Konstantin V. Vassilevski
Also filed as: VASSILEVSKI KONSTANTIN · VASSILEVSKI KONSTANTIN V
6 granted patents·3 pending applications·237 citations·filing 1998–2006
86Inventor score
Files withTECHNOLOGIES AND DEVICES INTER3UNIV NEWCASTLE2TECHNOLOGIES & DEVICES1TECHNOLOGIES & DEVICES INTERNA1TECHNOLOGY AND DEVICES INTERNA1
Top patents by PatentIndex Score
9 records- 0191US6479839B2III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layerTECHNOLOGIES & DEVICES INTERNA·Filed 2001·Granted Nov 12, 2002·99 cites·51 claims
- 0283US6849862B2III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layerTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Feb 1, 2005·33 cites·51 claims
- 0381US7141498B2Method of forming an ohmic contact in wide band semiconductorUNIV NEWCASTLE·Filed 2005·Granted Nov 28, 2006·14 cites·4 claims
- 0475US6559467B2P-n heterojunction-based structures utilizing HVPE grown III-V compound layersTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·19 cites·33 claims
- 0575US6218269B1Process for producing III-V nitride pn junctions and p-i-n junctionsTECHNOLOGY AND DEVICES INTERNA·Filed 1998·Granted Apr 17, 2001·54 cites·12 claims
- 0673US6559038B2Method for growing p-n heterojunction-based structures utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·18 cites·36 claims
- 0736US2006273323A1Semiconductor device having SiC substrate and method for manufacturing the sameUNIV NEWCASTLE·Filed 2006·Application pending·0 cites
- 0835US2002047135A1P-N junction-based structures utilizing HVPE grown III-V compound layersFiled 2001·Application pending·0 cites
- 0935US2002017650A1III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layerTECHNOLOGIES & DEVICES·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →