Inventor · disambiguated record
Chien-Chao Huang
Also filed as: HUANG CHIEN-CHAO
61 granted patents·17 pending applications·1,480 citations·filing 1997–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG47UNITED MICROELECTRONICS CORP9HUANG CHIEN-CHAO5TAIWAN SEMICONDUCTOR MFG CO LTD5NAT APPLIED RES LABORATORIES2
Top patents by PatentIndex Score
78 records- 0198US6867433B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·321 cites·69 claims
- 0297US7238564B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·64 cites·10 claims
- 0396US7183137B2Method for dicing semiconductor wafersTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·102 cites·15 claims
- 0495US6900502B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 31, 2005·120 cites·50 claims
- 0594US7268024B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 11, 2007·80 cites·26 claims
- 0693US7190036B2Transistor mobility improvement by adjusting stress in shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·68 cites·29 claims
- 0792US7022561B2CMOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 4, 2006·84 cites·30 claims
- 0890US7504652B2Phase change random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 17, 2009·21 cites·20 claims
- 0990US7357838B2Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 15, 2008·13 cites·24 claims
- 1090US6051345AMethod of producing phase shifting maskUNITED MICROELECTRONICS CORP·Filed 1998·Granted Apr 18, 2000·81 cites·33 claims
- 1189US6420791B1Alignment mark designUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 16, 2002·111 cites·16 claims
- 1288US7465620B2Transistor mobility improvement by adjusting stress in shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·13 cites·17 claims
- 1388US7029994B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 18, 2006·15 cites·24 claims
- 1486US6924181B2Strained silicon layer semiconductor product employing strained insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·38 cites·16 claims
- 1585US6878610B1Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 12, 2005·29 cites·10 claims
- 1683US7545006B2CMOS devices with graded silicide regionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 9, 2009·10 cites·19 claims
- 1783US7053453B2Substrate contact and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 30, 2006·34 cites·36 claims
- 1882US8008157B2CMOS device with raised source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 30, 2011·8 cites·19 claims
- 1981US8835291B2Strained gate electrodes in semiconductor devicesHUANG CHIEN-CHAO·Filed 2009·Granted Sep 16, 2014·8 cites·20 claims
- 2079US7745904B2Shallow trench isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 29, 2010·7 cites·8 claims
- 2178US8319962B2Mask making decision for manufacturing (DFM) on mask quality controlTU CHIH-CHIANG·Filed 2012·Granted Nov 27, 2012·2 cites·20 claims
- 2278US6812116B2Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performanceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 2, 2004·22 cites·9 claims
- 2377US7164189B2Slim spacer device and manufacturing methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 16, 2007·21 cites·25 claims
- 2476US7135372B2Strained silicon device manufacturing methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 14, 2006·18 cites·8 claims
- 2571US9905474B2CMOS device with raised source and drain regionsLIANG CHUN SHENG·Filed 2011·Granted Feb 27, 2018·3 cites·20 claims
- 2670US7602006B2Semiconductor flash deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 13, 2009·5 cites·15 claims
- 2769US6187480B1Alternating phase-shifting maskUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 13, 2001·28 cites·5 claims
- 2868US7342289B2Strained silicon MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 11, 2008·13 cites·41 claims
- 2967US11380762B2Semiconductor device having semiconductor alloy layer adjacent a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·0 cites·20 claims
- 3067US6975006B2Semiconductor device with modified channel compressive stressTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 13, 2005·12 cites·12 claims
- 3167US6316303B1Method of fabricating a MOS transistor having SEG siliconUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 13, 2001·13 cites·15 claims
- 3266US7462554B2Method for forming semiconductor device with modified channel compressive stressTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 9, 2008·3 cites·17 claims
- 3366US2024377728A1Photomask and method for inspecting photomaskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3465US7638376B2Method for forming SOI deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 29, 2009·3 cites·22 claims
- 3565US7265425B2Semiconductor device employing an extension spacer and a method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 4, 2007·12 cites·33 claims
- 3664US7119440B2Back end IC wiring with improved electro-migration resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 10, 2006·11 cites·43 claims
- 3763US6254676B1Method for manufacturing metal oxide semiconductor transistor having raised source/drainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 3, 2001·28 cites·20 claims
- 3862US10818754B2Semiconductor device with silicided source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·0 cites·16 claims
- 3961US8792078B2Method and pellicle mounting apparatus for reducing pellicle induced distortionLIN CHENG-MING·Filed 2010·Granted Jul 29, 2014·1 cites·20 claims
- 4061US8569845B2Strained silicon deviceHUANG CHIEN-CHAO·Filed 2006·Granted Oct 29, 2013·2 cites·20 claims
- 4160US10446646B2Cobalt silicidation process for substrates comprised with a silicon-germanium layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·0 cites·12 claims
- 4257US2025237941A1Pellicle for euv applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4356US8120767B2Mask making decision for manufacturing (DFM) on mask quality controlTU CHIH-CHIANG·Filed 2008·Granted Feb 21, 2012·0 cites·19 claims
- 4455US7202122B2Cobalt silicidation process for substrates with a silicon—germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 10, 2007·6 cites·28 claims
- 4554US9673280B2Cobalt silicidation process for substrates comprised with a silicon-germanium layerHUANG CHIEN-CHAO·Filed 2007·Granted Jun 6, 2017·0 cites·20 claims
- 4654US8847253B2Programming optical deviceHUANG CHIEN-CHAO·Filed 2008·Granted Sep 30, 2014·0 cites·4 claims
- 4753US7547605B2Microelectronic device and a method for its manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 16, 2009·5 cites·33 claims
- 4853US2010233437A1Lithographic machine platform and applications thereofNAT APPLIED RES LABORATORIES·Filed 2009·Application pending·0 cites
- 4952US8679728B2Method for fabricating patterned layerNAT APPLIED RES LABORATORIES·Filed 2012·Granted Mar 25, 2014·0 cites·20 claims
- 5052US5853927AMethod of aligning a mask in photolithographic processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 29, 1998·12 cites·20 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →