Inventor · disambiguated record
Hong Yu
Also filed as: YU HONG · YU HONG-TIAN
50 granted patents·16 pending applications·40 citations·filing 2003–2024
96Inventor score
Top patents by PatentIndex Score
66 records- 0195US11705508B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 18, 2023·2 cites·19 claims
- 0294US11888031B2Fin-based lateral bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 30, 2024·2 cites·16 claims
- 0394US11843044B2Bipolar transistor structure on semiconductor fin and methods to form sameGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0493US12020937B2Carbon implantation for thicker gate silicideGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 25, 2024·2 cites·7 claims
- 0591US10192746B1STI inner spacer to mitigate SDB loadingGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·12 cites·14 claims
- 0690US11127842B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·4 cites·19 claims
- 0786US11810951B2Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materialsGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·1 cites·18 claims
- 0881US10971583B2Gate cut isolation including air gap, integrated circuit including same and related methodGLOBALFOUNDRIES US INC·Filed 2018·Granted Apr 6, 2021·2 cites·9 claims
- 0979US12107154B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1077US11037937B2SRAM bit cells formed with dummy structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·17 claims
- 1177US11037821B2Multiple patterning with self-alignment provided by spacersGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·13 claims
- 1276US12349374B2Lateral bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1370US11205648B2IC structure with single active region having different doping profile than set of active regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 21, 2021·1 cites·17 claims
- 1468US11610965B2Gate cut isolation including air gap, integrated circuit including same and related methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 21, 2023·0 cites·15 claims
- 1567US12205949B1High-voltage semiconductor device structuresGLOBALFOUNDRIES US INC·Filed 2024·Granted Jan 21, 2025·0 cites·20 claims
- 1666US12364000B1Device structures for a high-voltage semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2024·Granted Jul 15, 2025·0 cites·19 claims
- 1763US12040388B2Lateral bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 1863US11935927B2Bipolar transistor with collector contactGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1963US11777019B2Lateral heterojunction bipolar transistor with improved breakdown voltage and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 2062US12501624B1Memory device structures that include a capacitorGLOBALFOUNDRIES US INC·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 2162US12464784B2Isolation structures of semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 4, 2025·0 cites·19 claims
- 2262US12414343B2Semiconductor device with different sized epitaxial structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2362US11942534B2Bipolar transistor with thermal conductorGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 26, 2024·0 cites·16 claims
- 2462US7006178B2One drop fill LCD panel having light-shielding pattern with first and second metal patternsCHUNGHWA PICTURE TUBES LTD·Filed 2003·Granted Feb 28, 2006·8 cites·11 claims
- 2562US2024387668A1Nanosheet structures with tunable channels and inner sidewall spacersGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2661US12513995B2Substrates of semiconductor devices having varying thicknesses of semiconductor layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 30, 2025·0 cites·13 claims
- 2761US12495575B2Multi-channel replacement metal gate deviceGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 9, 2025·0 cites·14 claims
- 2861US12471294B2Array arrangements of vertical bipolar junction transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2961US11749727B2Bipolar junction transistors with duplicated terminalsGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 3060US12464745B2Bipolar junction transistor arraysGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 3159US12389616B2Transistors with multiple silicide layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 3259US11935928B2Bipolar transistor with self-aligned asymmetric spacerGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 19, 2024·0 cites·19 claims
- 3359US11908898B2Lateral bipolar transistor structure with base layer of varying horizontal width and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 3459US11804541B2Bipolar transistor structure with emitter/collector contact to doped semiconductor well and related methodsGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 3559US11784224B2Lateral bipolar transistor structure with base over semiconductor buffer and related methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 3659US11769806B2Bipolar junction transistors including wrap-around emitter and collector contactsGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 3759US2025248088A1Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layerGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 3858US12261215B2Fin on silicon-on-insulatorGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 25, 2025·0 cites·17 claims
- 3958US11967636B2Lateral bipolar junction transistors with an airgap spacerGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 4057US11264504B2Active and dummy fin structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 4157US2025029869A1Isolation structure having different liners on upper and lower portionsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4257US2025089317A1Nanosheet structures with bottom semiconductor materialGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4357US2024047555A1Semiconductor structure including field effect transistor with scaled gate length and methodGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 4456US12272740B2Bipolar junction transistors with a nanosheet intrinsic baseGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 4556US2025254985A1Finfet with gate-all-around structure including gate dielectric layer thicker in buried gate region than in outer gate regionGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4655US12389627B2Silicon germanium fins and integration methodsGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 12, 2025·0 cites·14 claims
- 4755US11195761B2IC structure with short channel gate structure having shorter gate height than long channel gate structureGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 7, 2021·0 cites·18 claims
- 4854US11881395B2Bipolar transistor structure on semiconductor fin and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 4954US2024429237A1Semiconductor device including diffusion break structure and method of forming semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 5054US2025241062A1Structure with two work function metals over conductive bridge, and method to form sameGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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