Inventor · disambiguated record
Frédéric Allibert
Also filed as: ALLIBERT FREDERIC · ALLIBERT FRÉDÉRIC
25 granted patents·14 pending applications·115 citations·filing 2006–2023
94Inventor score
Files withSOITEC SILICON ON INSULATOR30ALLIBERT FREDERIC2ALLIBERT FRÉDÉRIC2COMMISSARIAT ENERGIE ATOMIQUE2COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1
Top patents by PatentIndex Score
39 records- 0191US7977747B2Composite substrate and method of fabricating the sameSOITEC SILICON ON INSULATOR·Filed 2010·Granted Jul 12, 2011·11 cites·14 claims
- 0291US7449395B2Method of fabricating a composite substrate with improved electrical propertiesSOITEC SILICON ON INSULATOR·Filed 2006·Granted Nov 11, 2008·18 cites·20 claims
- 0389US9129800B2Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applicationsALLIBERT FRÉDÉRIC·Filed 2012·Granted Sep 8, 2015·17 cites·5 claims
- 0489US8765571B2Method of manufacturing a base substrate for a semi-conductor on insulator type substrateKONONCHUK OLEG·Filed 2012·Granted Jul 1, 2014·12 cites·17 claims
- 0582US7790048B2Treatment of the working layer of a multilayer structureSOITEC SILICON ON INSULATOR·Filed 2006·Granted Sep 7, 2010·10 cites·16 claims
- 0682US7476930B2Multi-gate FET with multi-layer channelSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 13, 2009·9 cites·18 claims
- 0781US8735946B2Substrate having a charged zone in an insulating buried layerSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 27, 2014·4 cites·16 claims
- 0880US7736993B2Composite substrate and method of fabricating the sameSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jun 15, 2010·8 cites·21 claims
- 0976US10847370B2Method for dissolving a buried oxide in a silicon-on-insulator waferSOITEC SILICON ON INSULATOR·Filed 2017·Granted Nov 24, 2020·2 cites·20 claims
- 1076US8535996B2Substrate having a charged zone in an insulating buried layerSHAHEEN MOHAMAD·Filed 2008·Granted Sep 17, 2013·6 cites·11 claims
- 1174US8802539B2Charge reservoir structureALLIBERT FRÉDÉRIC·Filed 2008·Granted Aug 12, 2014·5 cites·18 claims
- 1271US9620626B2Method for fabricating a semiconductor device including fin relaxation, and related structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Apr 11, 2017·2 cites·21 claims
- 1369US8153504B2Process for manufacturing a composite substrateALLIBERT FREDERIC·Filed 2008·Granted Apr 10, 2012·4 cites·12 claims
- 1468US8008929B2Method and apparatus for measuring a lifetime of charge carriersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Aug 30, 2011·5 cites·23 claims
- 1567US8372733B2Method for fabricating a locally passivated germanium-on-insulator substrateSOITEC SILICON ON INSULATOR·Filed 2009·Granted Feb 12, 2013·2 cites·18 claims
- 1662US2022301847A1Support for a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1760US12476134B2Semiconductor structure for digital and radiofrequency applications, and method for manufacturing such a structureSOITEC SILICON ON INSULATOR·Filed 2019·Granted Nov 18, 2025·0 cites·20 claims
- 1853US9076713B2Locally passivated germanium-on-insulator substrateSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jul 7, 2015·0 cites·15 claims
- 1953US2014225182A1Substrate having a charged zone in an insulating buried layerSOITEC SILICON ON INSULATOR·Filed 2014·Application pending·0 cites
- 2053US2024271321A1Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sicSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2152US12362226B2Method for forming a handling substrate for a composite structure intended for RF applications and handling substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jul 15, 2025·0 cites·20 claims
- 2252US11373856B2Support for a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2018·Granted Jun 28, 2022·0 cites·20 claims
- 2352US2025006492A1Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sicSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2450US12119258B2Semiconductor structure comprising a buried porous layer for RF applicationsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 2550US11974505B2Hybrid structure for surface acoustic wave device and associated production methodSOITEC SILICON ON INSULATOR·Filed 2019·Granted Apr 30, 2024·0 cites·6 claims
- 2649US2025125140A1Method for manufacturing a non-deformable p-sic waferSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 2748US2024266172A1Semiconductor structure comprising an electrically conductive bonding interface, and associated manufacturing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 2847US9443933B2Matching of transistorsCommissariat à l'Energie Atomique et aux Energies Alternatives·Filed 2013·Granted Sep 13, 2016·0 cites·12 claims
- 2947US2023207382A1Method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 3046US2015168326A1Method and device for testing semiconductor subtrates for radiofrequency applicationSOITEC SILICON ON INSULATOR·Filed 2013·Application pending·0 cites
- 3145US10819282B2Method for minimizing distortion of a signal in a radiofrequency circuitSOITEC SILICON ON INSULATOR·Filed 2018·Granted Oct 27, 2020·0 cites·20 claims
- 3245US2023215760A1Method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 3345US2025211199A1Piezoelectric-on-insulator (poi) substrate and method for producing a piezoelectric-on-insulator (poi) substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 3444US2022076992A1Semiconductor structure for digital and radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2019·Application pending·0 cites
- 3540US11688627B2Substrate for radiofrequency applications and associated manufacturing methodSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jun 27, 2023·0 cites·17 claims
- 3640US10002882B2Method for manufacturing a high-resistivity semiconductor-on-insulator substrate including an RF circuit overlapping a doped region in the substrateSOITEC SILICON ON INSULATOR·Filed 2016·Granted Jun 19, 2018·0 cites·10 claims
- 3740US2023025429A1Method for manufacturing a semiconductor-on-insulator structure for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 3840US2021183691A1Substrate for an integrated radiofrequency device, and process for manufacturing sameSOITEC SILICON ON INSULATOR·Filed 2018·Application pending·0 cites
- 3931US2008268615A1Treatment of a Germanium Layer Bonded with a SubstrateALLIBERT FREDERIC·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →