Inventor · disambiguated record
Shine C. Chung
Also filed as: CHUNG SHINE · CHUNG SHINE C · CHUNG SHINE CHIEN
161 granted patents·14 pending applications·4,160 citations·filing 1986–2024
99Inventor score
Files withCHUNG SHINE C66TAIWAN SEMICONDUCTOR MFG55ATTOPSEMI TECH CO LTD19CHUNG SHINE13ADVANCED MICRO DEVICES INC2
Top patents by PatentIndex Score
175 records- 0199US9818478B2Programmable resistive device and memory using diode as selectorCHUNG SHINE C·Filed 2013·Granted Nov 14, 2017·330 cites·28 claims
- 0299US9305973B2One-time programmable memories using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2013·Granted Apr 5, 2016·36 cites·28 claims
- 0399US8854859B2Programmably reversible resistive device cells using CMOS logic processesCHUNG SHINE C·Filed 2011·Granted Oct 7, 2014·69 cites·29 claims
- 0499US8848423B2Circuit and system of using FinFET for building programmable resistive devicesCHUNG SHINE C·Filed 2013·Granted Sep 30, 2014·70 cites·30 claims
- 0599US8817563B2Sensing circuit for programmable resistive device using diode as program selectorCHUNG SHINE C·Filed 2011·Granted Aug 26, 2014·59 cites·19 claims
- 0699US8760904B2One-Time Programmable memories using junction diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Jun 24, 2014·57 cites·22 claims
- 0799US8649203B2Reversible resistive memory using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Feb 11, 2014·54 cites·19 claims
- 0899US8644049B2Circuit and system of using polysilicon diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2011·Granted Feb 4, 2014·57 cites·19 claims
- 0999US8576602B2One-time programmable memories using polysilicon diodes as program selectorsCHUNG SHINE C·Filed 2011·Granted Nov 5, 2013·46 cites·21 claims
- 1099US8570800B2Memory using a plurality of diodes as program selectors with at least one being a polysilicon diodeCHUNG SHINE C·Filed 2011·Granted Oct 29, 2013·67 cites·21 claims
- 1199US8559208B2Programmably reversible resistive device cells using polysilicon diodesCHUNG SHINE C·Filed 2011·Granted Oct 15, 2013·51 cites·23 claims
- 1299US8514606B2Circuit and system of using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2011·Granted Aug 20, 2013·79 cites·19 claims
- 1399US8488359B2Circuit and system of using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2012·Granted Jul 16, 2013·89 cites·25 claims
- 1499US8488364B2Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processesCHUNG SHINE C·Filed 2011·Granted Jul 16, 2013·74 cites·20 claims
- 1599US8482972B2Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diodeCHUNG SHINE C·Filed 2011·Granted Jul 9, 2013·79 cites·23 claims
- 1699US7546438B2Algorithm mapping, specialized instructions and architecture features for smart memory computingCHUNG SHINE C·Filed 2005·Granted Jun 9, 2009·425 cites·9 claims
- 1799US6807614B2Method and apparatus for using smart memories in computingFiled 2002·Granted Oct 19, 2004·504 cites·22 claims
- 1898US10916317B2Programmable resistance memory on thin film transistor technologyATTOPSEMI TECH CO LTD·Filed 2020·Granted Feb 9, 2021·9 cites·20 claims
- 1998US9460807B2One-time programmable memory devices using FinFET technologyCHUNG SHINE C·Filed 2015·Granted Oct 4, 2016·27 cites·29 claims
- 2098US9343176B2Low-pin-count non-volatile memory interface with soft programming capabilityCHUNG SHINE C·Filed 2015·Granted May 17, 2016·32 cites·20 claims
- 2198US9070437B2Circuit and system of using junction diode as program selector for one-time programmable devices with heat sinkCHUNG SHINE C·Filed 2013·Granted Jun 30, 2015·38 cites·21 claims
- 2298US9025357B2Programmable resistive memory unit with data and reference cellsCHUNG SHINE C·Filed 2012·Granted May 5, 2015·48 cites·18 claims
- 2398US9019791B2Low-pin-count non-volatile memory interface for 3D ICCHUNG SHINE C·Filed 2014·Granted Apr 28, 2015·46 cites·27 claims
- 2498US9019742B2Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memoryCHUNG SHINE C·Filed 2012·Granted Apr 28, 2015·50 cites·20 claims
- 2598US8988965B2Low-pin-count non-volatile memory interfaceCHUNG SHINE C·Filed 2011·Granted Mar 24, 2015·45 cites·27 claims
- 2698US8929122B2Circuit and system of using a junction diode as program selector for resistive devicesCHUNG SHINE C·Filed 2011·Granted Jan 6, 2015·33 cites·23 claims
- 2798US8923085B2Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for accessCHUNG SHINE C·Filed 2014·Granted Dec 30, 2014·56 cites·20 claims
- 2898US8913415B2Circuit and system for using junction diode as program selector for one-time programmable devicesCHUNG SHINE C·Filed 2013·Granted Dec 16, 2014·57 cites·28 claims
- 2998US8913449B2System and method of in-system repairs or configurations for memoriesCHUNG SHINE C·Filed 2012·Granted Dec 16, 2014·67 cites·30 claims
- 3098US8861249B2Circuit and system of a low density one-time programmable memoryCHUNG SHINE C·Filed 2013·Granted Oct 14, 2014·56 cites·17 claims
- 3198US8830720B2Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devicesCHUNG SHINE C·Filed 2013·Granted Sep 9, 2014·58 cites·24 claims
- 3298US8804398B2Reversible resistive memory using diodes formed in CMOS processes as program selectorsCHUNG SHINE C·Filed 2011·Granted Aug 12, 2014·41 cites·21 claims
- 3398US6970988B1Algorithm mapping, specialized instructions and architecture features for smart memory computingCHUNG SHINE C·Filed 2002·Granted Nov 29, 2005·134 cites·25 claims
- 3497US9767915B2One-time programmable device with integrated heat sinkATTOPSEMI TECH CO LTD·Filed 2016·Granted Sep 19, 2017·19 cites·24 claims
- 3597US9478306B2Circuit and system of using junction diode as program selector for one-time programmable devices with heat sinkCHUNG SHINE C·Filed 2015·Granted Oct 25, 2016·21 cites·28 claims
- 3697US9324849B2Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIACCHUNG SHINE C·Filed 2012·Granted Apr 26, 2016·30 cites·25 claims
- 3797US9281038B2Low-pin-count non-volatile memory interfaceCHUNG SHINE C·Filed 2014·Granted Mar 8, 2016·28 cites·20 claims
- 3897US9236141B2Circuit and system of using junction diode of MOS as program selector for programmable resistive devicesCHUNG SHINE C·Filed 2014·Granted Jan 12, 2016·27 cites·21 claims
- 3997US9076526B2OTP memories functioning as an MTP memoryCHUNG SHINE C·Filed 2013·Granted Jul 7, 2015·30 cites·21 claims
- 4096US11062786B2One-time programmable memories with low power read operation and novel sensing schemeATTOPSEMI TECH CO LTD·Filed 2020·Granted Jul 13, 2021·5 cites·24 claims
- 4196US10249379B2One-time programmable devices having program selector for electrical fuses with extended areaCHUNG SHINE C·Filed 2014·Granted Apr 2, 2019·17 cites·35 claims
- 4296US9881970B2Programmable resistive devices using Finfet structures for selectorsATTOPSEMI TECH CO LTD·Filed 2016·Granted Jan 30, 2018·10 cites·26 claims
- 4396US9548109B2Circuit and system of using FinFET for building programmable resistive devicesCHUNG SHINE C·Filed 2014·Granted Jan 17, 2017·21 cites·41 claims
- 4496US9324447B2Circuit and system for concurrently programming multiple bits of OTP memory devicesCHUNG SHINE C·Filed 2013·Granted Apr 26, 2016·26 cites·22 claims
- 4596US8223534B2Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gateCHUNG SHINE·Filed 2010·Granted Jul 17, 2012·35 cites·20 claims
- 4696US7612638B2Waveguides in integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 3, 2009·37 cites·19 claims
- 4794US8607019B2Circuit and method of a memory compiler based on subtractive approachCHUNG SHINE C·Filed 2012·Granted Dec 10, 2013·21 cites·20 claims
- 4894US8415764B2High-voltage BJT formed using CMOS HV processesCHUNG TAO-WEN·Filed 2010·Granted Apr 9, 2013·66 cites·20 claims
- 4993US10586832B2One-time programmable devices using gate-all-around structuresATTOPSEMI TECH CO LTD·Filed 2019·Granted Mar 10, 2020·10 cites·20 claims
- 5092US10192615B2One-time programmable devices having a semiconductor fin structure with a divided active regionATTOPSEMI TECH CO LTD·Filed 2018·Granted Jan 29, 2019·12 cites·20 claims
Showing the top 50 of 175 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →