Inventor · disambiguated record
Charles E. May
Also filed as: MAY CHARLES · MAY CHARLES E · MAY CHARLES ELIJAH · MAY CHARLES H
118 granted patents·7 pending applications·3,255 citations·filing 1974–2010
99Inventor score
Files withADVANCED MICRO DEVICES INC91LSI LOGIC CORP23NASA2ADVANCED MICRO SERVICES1ADVANCED MICRON DEVICES INC1
Top patents by PatentIndex Score
125 records- 0198US6225168B1Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·239 cites·20 claims
- 0295US6210999B1Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 3, 2001·211 cites·28 claims
- 0392US6452412B1Drop-in test structure and methodology for characterizing an integrated circuit process flow and topographyADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 17, 2002·136 cites·8 claims
- 0492US6150222AMethod of making a high performance transistor with elevated spacer formation and self-aligned channel regionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 21, 2000·106 cites·39 claims
- 0591US6130012AIon beam milling to generate custom reticlesADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 10, 2000·80 cites·29 claims
- 0691US5963803AMethod of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·90 cites·33 claims
- 0790US6084280ATransistor having a metal silicide self-aligned to the gateADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 4, 2000·82 cites·41 claims
- 0889US6008095AProcess for formation of isolation trenches with high-K gate dielectricsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 28, 1999·76 cites·30 claims
- 0988US5943585ATrench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogenADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 24, 1999·92 cites·12 claims
- 1087US7358594B1Method of forming a low k polymer E-beam printable mechanical supportLSI LOGIC CORP·Filed 2005·Granted Apr 15, 2008·12 cites·9 claims
- 1187US6323519B1Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication processADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 27, 2001·90 cites·4 claims
- 1287US6100173AForming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation processADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·68 cites·19 claims
- 1386US6410967B1Transistor having enhanced metal silicide and a self-aligned gate electrodeADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 25, 2002·76 cites·14 claims
- 1486US6067154AMethod and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopyADVANCED MICRO DEVICES INC·Filed 1998·Granted May 23, 2000·75 cites·15 claims
- 1584US6268637B1Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabricationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 31, 2001·73 cites·21 claims
- 1684US6207485B1Integration of high K spacers for dual gate oxide channel fabrication techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·58 cites·8 claims
- 1784US6150708AAdvanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit densityADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·56 cites·26 claims
- 1883US6144071AUltrathin silicon nitride containing sidewall spacers for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·54 cites·20 claims
- 1982US6274442B1Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 14, 2001·48 cites·5 claims
- 2079US6151119AApparatus and method for determining depth profile characteristics of a dopant material in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 21, 2000·67 cites·22 claims
- 2178US6127251ASemiconductor device with a reduced width gate dielectric and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·48 cites·24 claims
- 2277US6875693B1Via and metal line interface capable of reducing the incidence of electro-migration induced voidsLSI LOGIC CORP·Filed 2003·Granted Apr 5, 2005·21 cites·17 claims
- 2377US5915195AIon implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 22, 1999·48 cites·11 claims
- 2476US6087705ATrench isolation structure partially bound between a pair of low K dielectric structuresADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·42 cites·11 claims
- 2576US4218280AMethod of cross-linking polyvinyl alcohol and other water soluble resinsNASA·Filed 1978·Granted Aug 19, 1980·23 cites·6 claims
- 2675US6531364B1Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 11, 2003·34 cites·24 claims
- 2775US6005285AArgon doped epitaxial layers for inhibiting punchthrough within a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·37 cites·14 claims
- 2874US6566244B1Process for improving mechanical strength of layers of low k dielectric materialLSI LOGIC CORP·Filed 2002·Granted May 20, 2003·20 cites·14 claims
- 2974US6168958B1Semiconductor structure having multiple thicknesses of high-K gate dielectrics and process of manufacture thereforADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 2, 2001·35 cites·24 claims
- 3073US6967177B1Temperature control systemLSI LOGIC CORP·Filed 2000·Granted Nov 22, 2005·14 cites·7 claims
- 3173US6560504B1Use of contamination-free manufacturing data in fault detection and classification as well as in run-to-run controlADVANCED MICRO DEVICES INC·Filed 1999·Granted May 6, 2003·47 cites·13 claims
- 3273US6140674ABuried trench capacitorADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·42 cites·20 claims
- 3372US6432812B1Method of coupling capacitance reductionLSI LOGIC CORP·Filed 2001·Granted Aug 13, 2002·12 cites·10 claims
- 3472US6077749AMethod of making dual channel gate oxide thickness for MOSFET transistor designADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 20, 2000·32 cites·17 claims
- 3571US5882983ATrench isolation structure partially bound between a pair of low K dielectric structuresADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 16, 1999·34 cites·7 claims
- 3670US5949126ATrench isolation structure employing protective sidewall spacers upon exposed surfaces of the isolation trenchADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 7, 1999·37 cites·6 claims
- 3769US6362510B1Semiconductor topography having improved active device isolation and reduced dopant migrationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 26, 2002·35 cites·16 claims
- 3869US5950106AMethod of patterning a metal substrate using spin-on glass as a hard maskADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 7, 1999·34 cites·29 claims
- 3968US6544829B1Polysilicon gate salicidationLSI LOGIC CORP·Filed 2002·Granted Apr 8, 2003·15 cites·20 claims
- 4068US6261908B1Buried local interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 17, 2001·34 cites·15 claims
- 4168US6127235AMethod for making asymmetrical gate oxide thickness in channel MOSFET regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·26 cites·18 claims
- 4268US5981368AEnhanced shallow junction design by polysilicon line width reduction using oxidation with integrated spacer formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 9, 1999·27 cites·21 claims
- 4367US6251800B1Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·31 cites·20 claims
- 4465US6117739ASemiconductor device with layered doped regions and methods of manufactureADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 12, 2000·28 cites·24 claims
- 4564US7361965B2Method and apparatus for redirecting void diffusion away from vias in an integrated circuit designLSI LOGIC CORP·Filed 2005·Granted Apr 22, 2008·2 cites·18 claims
- 4664US6620729B1Ion beam dual damascene processLSI LOGIC CORP·Filed 2001·Granted Sep 16, 2003·7 cites·17 claims
- 4764US6194768B1High dielectric constant gate dielectric with an overlying tantalum gate conductor formed on a sidewall surface of a sacrificial structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 27, 2001·21 cites·10 claims
- 4863US7023067B2Bond pad designLSI LOGIC CORP·Filed 2003·Granted Apr 4, 2006·11 cites·13 claims
- 4963US6159804ADisposable sidewall oxidation fabrication method for making a transistor having an ultra short channel lengthADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·22 cites·34 claims
- 5063US5904539ASemiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical propertiesADVANCED MICRO DEVICES INC·Filed 1996·Granted May 18, 1999·28 cites·15 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →