Inventor · disambiguated record
Wang Nang Wang
Also filed as: WANG JIAN · WANG WANG · WANG WANG NANG
30 granted patents·7 pending applications·624 citations·filing 1990–2024
97Inventor score
Files withARIMA OPTOELECTRONICS CORP11WANG WANG NANG8NANOGAN LTD4SMITHS GROUP PLC3CATON TECH SHANGHAI LIMITED2
Top patents by PatentIndex Score
37 records- 0195US7846751B2LED chip thermal management and fabrication methodsWANG WANG NANG·Filed 2007·Granted Dec 7, 2010·26 cites·18 claims
- 0293US6614170B2Light emitting diode with light conversion using scattering optical mediaARIMA OPTOELECTRONICS CORP·Filed 2001·Granted Sep 2, 2003·80 cites·34 claims
- 0391US6614060B1Light emitting diodes with asymmetric resonance tunnellingARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Sep 2, 2003·137 cites·8 claims
- 0489US8828849B2Production of single-crystal semiconductor material using a nanostructure templateWANG WANG NANG·Filed 2008·Granted Sep 9, 2014·8 cites·24 claims
- 0588US8652947B2Non-polar III-V nitride semiconductor and growth methodWANG WANG NANG·Filed 2007·Granted Feb 18, 2014·13 cites·19 claims
- 0688US8118934B2Non-polar III-V nitride material and production methodWANG WANG NANG·Filed 2007·Granted Feb 21, 2012·13 cites·25 claims
- 0786US6455870B1Unipolar light emitting devices based on III-nitride semiconductor superlatticesARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Sep 24, 2002·76 cites·7 claims
- 0885US7915622B2Textured light emitting diodesNANOGAN LTD·Filed 2005·Granted Mar 29, 2011·13 cites·13 claims
- 0985US7050233B2Precision phase retardation devices and method of making sameNANOOPTO CORP·Filed 2003·Granted May 23, 2006·30 cites·30 claims
- 1084US6414444B2Field-emission displaySMITHS GROUP PLC·Filed 2001·Granted Jul 2, 2002·22 cites·9 claims
- 1181US8383493B2Production of semiconductor devicesWANG WANG NANG·Filed 2008·Granted Feb 26, 2013·7 cites·18 claims
- 1281US2025334545A1Nanofluidic apparatus and method for manipulating biomoleculeQUANTUM NIL CORP·Filed 2024·Application pending·0 cites
- 1381US2025333679A1Apparatus and method for culturing cells in vitroQUANTUM NIL CORP·Filed 2024·Application pending·0 cites
- 1479US6577661B1Semiconductor laser with lateral light confinement by polygonal surface optical grating resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Jun 10, 2003·16 cites·33 claims
- 1577US7906411B2Deposition technique for producing high quality compound semiconductor materialsNANOGAN LTD·Filed 2005·Granted Mar 15, 2011·5 cites·46 claims
- 1667US6538368B1Electron-emitting devicesSMITHS GROUP PLC·Filed 2000·Granted Mar 25, 2003·22 cites·20 claims
- 1766US6284556B1Diamond surfacesSMITHS GROUP PLC·Filed 1997·Granted Sep 4, 2001·27 cites·12 claims
- 1864US10023974B2Substrates for semiconductor devicesRFHIC CORP·Filed 2013·Granted Jul 17, 2018·2 cites·5 claims
- 1964US6380050B1Method of epitaxially growing a GaN semiconductor layerARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Apr 30, 2002·11 cites·6 claims
- 2061US5952772ADiamond electron emitterSMITHS INDUSTRIES PLC·Filed 1998·Granted Sep 14, 1999·15 cites·16 claims
- 2159US6753818B2Concealed antenna for mobile communication deviceARIMA OPTOELECTRONICS CORP·Filed 2001·Granted Jun 22, 2004·12 cites·15 claims
- 2258US6130445ALED with AlGaInP Bragg layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted Oct 10, 2000·23 cites·4 claims
- 2357US10931410B2Network-based real-time video transmission method and deviceCATON TECH SHANGHAI LIMITED·Filed 2016·Granted Feb 23, 2021·1 cites·11 claims
- 2453US5484853ACryogenic adhesives made from epoxy terminated urethanesCHINA TECHNICAL CONSULTANTS IN·Filed 1993·Granted Jan 16, 1996·20 cites·3 claims
- 2552US6417522B1Led with alternated strain layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted Jul 9, 2002·17 cites·5 claims
- 2651US10573686B2Epitaxial AIN/cREO structure for RF filter applicationsIQE PLC·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 2751US6924511B2Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Aug 2, 2005·4 cites·17 claims
- 2849US7023892B2Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injectionARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Apr 4, 2006·2 cites·20 claims
- 2948US9355840B2High quality devices growth on pixelated patterned templatesWANG WANG NANG·Filed 2011·Granted May 31, 2016·0 cites·16 claims
- 3046US5066636ACitrate/ethylenediamine gel method for forming high temperature superconductorsIND TECH RES INST·Filed 1990·Granted Nov 19, 1991·10 cites·2 claims
- 3145US6396862B1LED with spreading layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted May 28, 2002·12 cites·11 claims
- 3245US2009243043A1Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materialsWANG WANG NANG·Filed 2007·Application pending·0 cites
- 3344US2015111370A1Crack-free gallium nitride materialsNANOGAN LTD·Filed 2014·Application pending·0 cites
- 3441US2015125976A1Selective sidewall growth of semiconductor materialNANOGAN LTD·Filed 2013·Application pending·0 cites
- 3539US2005236630A1Transparent contact for light emitting diodeWANG WANG-NANG·Filed 2004·Application pending·0 cites
- 3637US2002084745A1Light emitting diode with light conversion by dielectric phosphor powderAIRMA OPTOELECTRONICS CORP·Filed 2000·Application pending·0 cites
- 3730US11057299B2Real-time video transmission method for multipath networkCATON TECH SHANGHAI LIMITED·Filed 2016·Granted Jul 6, 2021·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →