Inventor · disambiguated record
William Koutny
Also filed as: KOUTNY JR WILLIAM W C · KOUTNY JR WILLIAM WALTER CHARLES · KOUTNY WILLIAM · KOUTNY WILLIAM W
9 granted patents·2 pending applications·254 citations·filing 1987–2019
89Inventor score
Files withCYPRESS SEMICONDUCTOR CORP6WATERBIT INC2KOUTNY JR WILLIAM W C1OLSON TIMOTHY L1RAMKUMAR KRISHNASWAMY1
Top patents by PatentIndex Score
11 records- 0196US8236151B1Substrate carrier for wet chemical processingOLSON TIMOTHY L·Filed 2010·Granted Aug 7, 2012·28 cites·19 claims
- 0295US8093128B2Integration of non-volatile charge trap memory devices and logic CMOS devicesKOUTNY JR WILLIAM W C·Filed 2008·Granted Jan 10, 2012·89 cites·14 claims
- 0386US4764248ARapid thermal nitridized oxide locos processCYPRESS SEMICONDUCTOR CORP·Filed 1987·Granted Aug 16, 1988·83 cites·8 claims
- 0484US9018693B2Deuterated film encapsulation of nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 28, 2015·6 cites·13 claims
- 0582US10788438B2Remote sensor systemWATERBIT INC·Filed 2019·Granted Sep 29, 2020·3 cites·14 claims
- 0651US8536640B2Deuterated film encapsulation of nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2007·Granted Sep 17, 2013·0 cites·14 claims
- 0751US6171180B1Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surfaceCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Jan 9, 2001·17 cites·31 claims
- 0850US6200896B1Employing an acidic liquid and an abrasive surface to polish a semiconductor topographyCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Mar 13, 2001·13 cites·15 claims
- 0950US6143663AEmploying deionized water and an abrasive surface to polish a semiconductor topographyCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Nov 7, 2000·15 cites·9 claims
- 1047US2020344962A1Power self harvesting control system and methodWATERBIT INC·Filed 2019·Application pending·0 cites
- 1138US2003219975A1Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structuresCYPRESS SEMICONDUCTOR CORP·Filed 2003·Application pending·0 cites
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