Inventor · disambiguated record
Yusuke Oniki
Also filed as: ONIKI YUSUKE
30 granted patents·3 pending applications·124 citations·filing 2013–2024
95Inventor score
Top patents by PatentIndex Score
33 records- 0198US10038079B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·43 cites·20 claims
- 0297US9324820B1Method for forming semiconductor structure with metallic layer over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 26, 2016·23 cites·20 claims
- 0394US9177785B1Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water solubleTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·14 cites·18 claims
- 0493US11367662B2Semiconductor devices and methods of forming the sameIMEC VZW·Filed 2020·Granted Jun 21, 2022·3 cites·17 claims
- 0591US11289589B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0691US10170413B2Semiconductor device having buried metal line and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
- 0788US11473682B2Diaphragm valveASAHI YUKIZAI CORP·Filed 2019·Granted Oct 18, 2022·5 cites·7 claims
- 0887US9647115B1Semiconductor structure with enhanced contact and method of manufacture the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·6 cites·20 claims
- 0985US10297505B2Semiconductor device and fabrication method thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·2 cites·20 claims
- 1085US9385197B2Semiconductor structure with contact over source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 1184US10790381B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·2 cites·20 claims
- 1284US9911806B2Solvent-based oxidation on germanium and III-V compound semiconductor materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·4 cites·12 claims
- 1384US2024347388A1Semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1482US10763114B2Method of fabricating gate oxide of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·2 cites·20 claims
- 1582US10516038B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 1681US9194804B2Stress analysis of 3-D structures using tip-enhanced Raman scattering technologyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·3 cites·20 claims
- 1776US12027424B2Semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
- 1875US2023343595A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1974US11600716B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 2072US10522459B2Method for fabricating semiconductor device having buried metal lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 2171US11101149B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·20 claims
- 2269US11728169B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 2367US11101178B2Semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 2467US9412605B2Method of removing oxide on semiconductor surface by layer of sulfurTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·1 cites·20 claims
- 2566US10720344B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 21, 2020·0 cites·20 claims
- 2663US10854736B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 2763US2025212440A1Method for forming a semiconductor structureIMEC VZW·Filed 2024·Application pending·0 cites
- 2860US10468275B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
- 2958US10056472B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 21, 2018·0 cites·20 claims
- 3053US11996459B2Counteracting semiconductor material loss during semiconductor structure formationIMEC VZW·Filed 2021·Granted May 28, 2024·0 cites·10 claims
- 3152US9882017B2Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water solubleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 30, 2018·0 cites·22 claims
- 3245US10134871B2Doping of high-K dielectric oxide by wet chemical treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 20, 2018·0 cites·20 claims
- 3343US9761440B2Surface passivation on indium-based materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →