Inventor · disambiguated record
Prateep Tuntasood
Also filed as: TUNTASOOD PRATEEP
25 granted patents·2 pending applications·1,188 citations·filing 1986–2016
97Inventor score
Files withSILICON STORAGE TECH INC10NAT SEMICONDUCTOR CORP5ACTRANS SYSTEM INC USA4ACTRANS SYSTEM INC2FAIRCHILD SEMICONDUCTOR1
Top patents by PatentIndex Score
27 records- 0198US6747310B2Flash memory cells with separated self-aligned select and erase gates, and process of fabricationACTRANS SYSTEM INC·Filed 2002·Granted Jun 8, 2004·564 cites·31 claims
- 0296US6894339B2Flash memory with trench select gate and fabrication processACTRANS SYSTEM INC USA·Filed 2003·Granted May 17, 2005·156 cites·39 claims
- 0395US7037787B2Flash memory with trench select gate and fabrication processACTRANS SYSTEM INC USA·Filed 2005·Granted May 2, 2006·59 cites·17 claims
- 0494US7718488B2Process of fabricating flash memory with enhanced program and erase couplingSILICON STORAGE TECH INC·Filed 2006·Granted May 18, 2010·35 cites·21 claims
- 0590US8461640B2FIN-FET non-volatile memory cell, and an array and method of manufacturingHU YAW WEN·Filed 2009·Granted Jun 11, 2013·29 cites·12 claims
- 0690US7800159B2Array of contactless non-volatile memory cellsSILICON STORAGE TECH INC·Filed 2007·Granted Sep 21, 2010·28 cites·4 claims
- 0790US7598561B2NOR flash memorySILICON STORAGE TECHNOLGY INC·Filed 2006·Granted Oct 6, 2009·31 cites·17 claims
- 0890US6992929B2Self-aligned split-gate NAND flash memory and fabrication processACTRANS SYSTEM INC USA·Filed 2004·Granted Jan 31, 2006·59 cites·30 claims
- 0988US7046552B2Flash memory with enhanced program and erase coupling and process of fabricating the sameACTRANS SYSTEM INC USA·Filed 2004·Granted May 16, 2006·45 cites·21 claims
- 1088US6885586B2Self-aligned split-gate NAND flash memory and fabrication processACTRANS SYSTEM INC·Filed 2002·Granted Apr 26, 2005·40 cites·40 claims
- 1187US7668013B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2008·Granted Feb 23, 2010·17 cites·8 claims
- 1277US7217621B2Self-aligned split-gate NAND flash memory and fabrication processSILICON STORAGE TECH INC·Filed 2005·Granted May 15, 2007·10 cites·29 claims
- 1373US9673208B2Method of forming memory array and logic devicesSILICON STORAGE TECH INC·Filed 2016·Granted Jun 6, 2017·2 cites·20 claims
- 1472US4727046AMethod of fabricating high performance BiCMOS structures having poly emitters and silicided basesFAIRCHILD SEMICONDUCTOR·Filed 1986·Granted Feb 23, 1988·42 cites·21 claims
- 1554US7974136B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2009·Granted Jul 5, 2011·2 cites·8 claims
- 1653US5001081AMethod of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1989·Granted Mar 19, 1991·20 cites·36 claims
- 1752US7501321B2NAND flash memory with densely packed memory gates and fabrication processSILICON STORAGE TECH INC·Filed 2006·Granted Mar 10, 2009·2 cites·9 claims
- 1846US5179031AMethod of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jan 12, 1993·11 cites·9 claims
- 1945US7646641B2NAND flash memory with nitride charge storage gates and fabrication processSILICON STORAGE TECH INC·Filed 2004·Granted Jan 12, 2010·4 cites·15 claims
- 2045US5023193AMethod for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masksNAT SEMICONDUCTOR CORP·Filed 1988·Granted Jun 11, 1991·12 cites·5 claims
- 2144US9293359B2Non-volatile memory cells with enhanced channel region effective width, and method of making sameSILICON STORAGE TECH INC·Filed 2014·Granted Mar 22, 2016·0 cites·7 claims
- 2238US5407840AMethod for simultaneously fabricating bipolar and complementary field effect transistorsNAT SEMICONDUCTOR CORP·Filed 1992·Granted Apr 18, 1995·8 cites·30 claims
- 2335US6171907B1Method for fabricating tunnel window in EEPROM cell with reduced cell pitchNEXFLASH TECHNOLOGIES INC·Filed 1997·Granted Jan 9, 2001·4 cites·3 claims
- 2435US5124817APolysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1991·Granted Jun 23, 1992·8 cites·2 claims
- 2534US2006017085A1NAND flash memory with densely packed memory gates and fabrication processTUNTASOOD PRATEEP·Filed 2004·Application pending·0 cites
- 2633US7215573B2Method and apparatus for reducing operation disturbanceSILICON STORAGE TECH INC·Filed 2005·Granted May 8, 2007·0 cites·15 claims
- 2732US2005145923A1NAND flash memory with enhanced program and erase performance, and fabrication processFiled 2004·Application pending·0 cites
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