Inventor · disambiguated record
Sung Ku Kwon
Also filed as: KWON SUNG K · KWON SUNG KU
13 granted patents·166 citations·filing 1993–2007
91Inventor score
Top patents by PatentIndex Score
13 records- 0180US5387539AMethod of manufacturing trench isolationHYUNDAI ELECTRONICS IND·Filed 1993·Granted Feb 7, 1995·67 cites·4 claims
- 0279US7332774B2Multiple-gate MOS transistor and a method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Feb 19, 2008·6 cites·4 claims
- 0376US7709330B2High voltage MOSFET having Si/SiGe heterojunction structure and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Granted May 4, 2010·4 cites·14 claims
- 0476US7208356B2Method of manufacturing multiple-gate MOS transistor having an improved channel structureKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Apr 24, 2007·14 cites·9 claims
- 0575US7276430B2Manufacturing method of silicon on insulator waferKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Oct 2, 2007·5 cites·10 claims
- 0670US7601614B2Manufacturing method of silicon on insulator waferKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Oct 13, 2009·3 cites·10 claims
- 0768US7233018B2High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Jun 19, 2007·2 cites·13 claims
- 0868US5665635AMethod for forming field oxide film in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1996·Granted Sep 9, 1997·42 cites·17 claims
- 0955US7391393B2Low power and high density source driver and current driven active matrix organic electroluminescent device having the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Jun 24, 2008·4 cites·8 claims
- 1047US7403178B2Sources driver circuit for active matrix electroluminescent display and driving method thereofKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jul 22, 2008·1 cites·7 claims
- 1145US7335945B2Multi-gate MOS transistor and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Feb 26, 2008·2 cites·21 claims
- 1242US5510290AMethod for forming a field oxide layer in a semiconductor device which prevents bird beak by nitradation of pad oxideHYUNDAI ELECTRONICS IND·Filed 1995·Granted Apr 23, 1996·11 cites·8 claims
- 1334US5719086AMethod for isolating elements of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1996·Granted Feb 17, 1998·5 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →