Inventor · disambiguated record
Fumiaki Maruyama
Also filed as: MARUYAMA FUMIAKI
3 granted patents·1 pending application·6 citations·filing 2000–2012
59Inventor score
Technology areasH10P
Top patents by PatentIndex Score
4 records- 0161US8569148B2Final polishing method for silicon single crystal wafer and silicon single crystal waferIIZUKA NAOTO·Filed 2008·Granted Oct 29, 2013·4 cites·9 claims
- 0245US9163327B2Silicon wafer and a silicon epitaxial wafer having a polycrystal silicon layer formed on a major surface including boron concentration of the polycrystal silicon layer being 1×1015 atom/cm3 or lessMARUYAMA FUMIAKI·Filed 2012·Granted Oct 20, 2015·0 cites·6 claims
- 0343US8273146B1Wafer and epitaxial wafer, and manufacturing processes thereforMARUYAMA FUMIAKI·Filed 2000·Granted Sep 25, 2012·2 cites·11 claims
- 0428US2007007245A1Silicon wafer reclamation method and reclaimed waferUCHIDA TAKANOBU·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →