Inventor · disambiguated record
Sylvain Baudot
Also filed as: BAUDOT SYLVAIN · BAUDOT SYLVAIN HENRI
8 granted patents·7 pending applications·5 citations·filing 2012–2025
76Inventor score
Files withIMEC VZW6GLOBALFOUNDRIES INC5ST MICROELECTRONICS CROLLES 22CAUBET PIERRE1ST MICROELECTRONICS CROLLES 2 SAS1
Top patents by PatentIndex Score
15 records- 0178US10998413B2Semiconductor fin structures having silicided portionsIMEC VZW·Filed 2019·Granted May 4, 2021·2 cites·19 claims
- 0265US9257518B2Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Feb 9, 2016·2 cites·18 claims
- 0362US9029254B2Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layerST MICROELECTRONICS CROLLES 2·Filed 2013·Granted May 12, 2015·1 cites·12 claims
- 0457US2025386486A1Dynamic random access memory device having logic circuit integrated with memory cells and method of fabricating the sameIMEC VZW·Filed 2025·Application pending·0 cites
- 0555US2024170559A1Method for producing closely spaced gate structures of a quantum dot deviceIMEC VZW·Filed 2023·Application pending·0 cites
- 0648US9953837B2Transistor having a gate comprising a titanium nitride layer and method for depositing this layerST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Apr 24, 2018·0 cites·19 claims
- 0744US9000596B2Transistors having a gate comprising a titanium nitride layerCAUBET PIERRE·Filed 2012·Granted Apr 7, 2015·0 cites·7 claims
- 0844US2021074830A1Isolated Vertical NanowireIMEC VZW·Filed 2020·Application pending·0 cites
- 0943US2021134995A1Vertical channel deviceIMEC VZW·Filed 2020·Application pending·0 cites
- 1042US9536974B2FET device with tuned gate work functionGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 3, 2017·0 cites·13 claims
- 1139US10903335B2Self-aligned internal spacer with EUVIMEC VZW·Filed 2019·Granted Jan 26, 2021·0 cites·16 claims
- 1236US9876111B2Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·0 cites·9 claims
- 1335US2017338343A1High-voltage transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 1434US2018053829A1Method of forming a semiconductor device and semiconductor deviceGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 1534US2019371942A1Semiconductor device structure and method of forming such a semiconductor device structureGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →