Inventor · disambiguated record
Rashmi Jha
Also filed as: JHA RASHMI
19 granted patents·4 pending applications·166 citations·filing 2007–2023
94Inventor score
Top patents by PatentIndex Score
23 records- 0194US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 0289US7754594B1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Granted Jul 13, 2010·17 cites·23 claims
- 0387US8502343B1Nanoelectric memristor device with dilute magnetic semiconductorsJHA RASHMI·Filed 2011·Granted Aug 6, 2013·53 cites·9 claims
- 0487US7943457B2Dual metal and dual dielectric integration for metal high-k FETsIBM·Filed 2009·Granted May 17, 2011·13 cites·15 claims
- 0586US10553793B2Systems and methods for gated-insulator reconfigurable non-volatile memory devicesUNIV CINCINNATI·Filed 2019·Granted Feb 4, 2020·6 cites·20 claims
- 0685US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 0780US7947549B2Gate effective-workfunction modification for CMOSIBM·Filed 2008·Granted May 24, 2011·7 cites·7 claims
- 0879US9564505B2Changing effective work function using ion implantation during dual work function metal gate integrationGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 7, 2017·4 cites·6 claims
- 0979US8053306B2PFET with tailored dielectric and related methods and integrated circuitIBM·Filed 2007·Granted Nov 8, 2011·8 cites·18 claims
- 1076US8436427B2Dual metal and dual dielectric integration for metal high-K FETsCHUDZIK MICHAEL P·Filed 2011·Granted May 7, 2013·4 cites·20 claims
- 1176US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 1272US8753936B2Changing effective work function using ion implantation during dual work function metal gate integrationCHUDZIK MICHAEL P·Filed 2008·Granted Jun 17, 2014·4 cites·14 claims
- 1371US8120144B2Method for forming dual high-K metal gate using photoresist mask and structures thereofCHUDZIK MICHAEL P·Filed 2011·Granted Feb 21, 2012·2 cites·12 claims
- 1468US8183642B2Gate effective-workfunction modification for CMOSPARK DAE-GYU·Filed 2011·Granted May 22, 2012·3 cites·14 claims
- 1563US7915115B2Method for forming dual high-k metal gate using photoresist mask and structures thereofIBM·Filed 2008·Granted Mar 29, 2011·1 cites·4 claims
- 1662US8138041B2In-situ silicon cap for metal gate electrodeCHUDZIK MICHAEL P·Filed 2008·Granted Mar 20, 2012·1 cites·9 claims
- 1758US2024194237A1Ferroelectric field effect transistors based approach for euclidean distance calculation in neuromorphic hardwareUNIVERSTY OF CINCINNATI·Filed 2023·Application pending·0 cites
- 1853US10854812B2Systems and methods for gated-insulator reconfigurable non-volatile memory devicesUNIV CINCINNATI·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 1949US10944053B2Systems and methods for gated-insulator reconfigurable non-volatile memory devicesUNIV CINCINNATI·Filed 2019·Granted Mar 9, 2021·0 cites·14 claims
- 2049US2024202066A1Systems and methods for fault detection and mitigation using adaptive and real-time degeneracyUNIV CINCINNATI·Filed 2023·Application pending·0 cites
- 2147US7955926B2Structure and method to control oxidation in high-k gate structuresIBM·Filed 2008·Granted Jun 7, 2011·0 cites·22 claims
- 2245US2010244206A1Method and structure for threshold voltage control and drive current improvement for high-k metal gate transistorsIBM·Filed 2009·Application pending·0 cites
- 2342US2009152651A1Gate stack structure with oxygen gettering layerIBM·Filed 2007·Application pending·0 cites
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