Inventor · disambiguated record
Michael Sebald
Also filed as: SEBALD MICHAEL
48 granted patents·9 pending applications·1,011 citations·filing 1990–2008
98Inventor score
Files withINFINEON TECHNOLOGIES AG27SIEMENS AG20INFINEONTECHNOLOGIES AG1KIRCH OLIVER1KLOSTERMANN ULRICH1
Top patents by PatentIndex Score
57 records- 0197US5234793AMethod for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after developmentSIEMENS AG·Filed 1990·Granted Aug 10, 1993·144 cites·20 claims
- 0296US6893972B2Process for sidewall amplification of resist structures and for the production of structures having reduced structure sizeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 17, 2005·280 cites·12 claims
- 0396US6703190B2Method for producing resist structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 9, 2004·112 cites·15 claims
- 0493US5173393AEtch-resistant deep ultraviolet resist process having an aromatic treating step after developmentSIEMENS AG·Filed 1990·Granted Dec 22, 1992·94 cites·9 claims
- 0590US5250375APhotostructuring processSIEMENS AG·Filed 1991·Granted Oct 5, 1993·66 cites·14 claims
- 0686US5234794APhotostructuring methodSIEMENS AG·Filed 1992·Granted Aug 10, 1993·50 cites·17 claims
- 0780US6514663B1Bottom resistINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 4, 2003·20 cites·22 claims
- 0865US6063543ARadiation-sensitive mixture and its useSIEMENS AG·Filed 1999·Granted May 16, 2000·25 cites·20 claims
- 0963US6110637APhotoresists which are suitable for producing sub-micron size structuresSIEMENS AKTINEGESELLSCHAFT·Filed 1995·Granted Aug 29, 2000·22 cites·20 claims
- 1063US5726094AProcess for producing a diffusion region adjacent to a recess in a substrateSIEMENS AG·Filed 1995·Granted Mar 10, 1998·31 cites·9 claims
- 1162US6770423B2Negative resist process with simultaneous development and silylationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 3, 2004·7 cites·8 claims
- 1258US7078709B2Apparatus and method for proof of outgassing productsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 18, 2006·3 cites·18 claims
- 1358US6841332B2Photoresist compound and method for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 11, 2005·5 cites·21 claims
- 1458US6746827B2Process for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 8, 2004·5 cites·34 claims
- 1555US6740475B2Method for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 25, 2004·4 cites·50 claims
- 1654US5384220AProduction of photolithographic structuresSIEMENS AG·Filed 1991·Granted Jan 24, 1995·16 cites·12 claims
- 1753US7018748B2Process for producing hard masksINFINEONTECHNOLOGIES AG·Filed 2003·Granted Mar 28, 2006·4 cites·16 claims
- 1853US6696208B2Method for experimentally verifying imaging errors in optical exposure unitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 24, 2004·4 cites·17 claims
- 1952US5262283AMethod for producing a resist structureSIEMENS AG·Filed 1991·Granted Nov 16, 1993·11 cites·20 claims
- 2052US5229258AMethod for producing a resist structureSIEMENS AG·Filed 1991·Granted Jul 20, 1993·11 cites·20 claims
- 2152US5194629AProcess for producing n-tertiary butoxycarbonyl-maleinimideSIEMENS AG·Filed 1991·Granted Mar 16, 1993·4 cites·8 claims
- 2251US7052820B2Silicon-containing resist for photolithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 30, 2006·3 cites·10 claims
- 2351US6746821B2Method of structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 8, 2004·3 cites·38 claims
- 2450US7928011B2Method for structuring a substrate using a metal mask layer formed using a galvanization processQIMONDA AG·Filed 2008·Granted Apr 19, 2011·0 cites·22 claims
- 2549US6746828B2Process for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 8, 2004·2 cites·30 claims
- 2649US5171656APhotosensitive compositionSIEMENS AG·Filed 1990·Granted Dec 15, 1992·10 cites·7 claims
- 2748US6887653B2Method for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 3, 2005·2 cites·27 claims
- 2848US5512334AMethod for the production of a bottom resistSIEMENS AG·Filed 1994·Granted Apr 30, 1996·7 cites·14 claims
- 2948US5368901AMethod for the production of a bottom resistSIEMENS AG·Filed 1992·Granted Nov 29, 1994·7 cites·2 claims
- 3047US6946236B2Negative resist process with simultaneous development and aromatization of resist structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 20, 2005·2 cites·8 claims
- 3147US6800407B2Method for experimentally verifying imaging errors in photomasksINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 5, 2004·2 cites·15 claims
- 3247US5360693APositive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistanceSIEMENS AG·Filed 1993·Granted Nov 1, 1994·11 cites·7 claims
- 3346US6743572B2Method for structuring a photoresist layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 1, 2004·1 cites·20 claims
- 3446US6306990B1Film-forming polymersSIEMENS AG·Filed 1999·Granted Oct 23, 2001·8 cites·21 claims
- 3545US7041426B2Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 9, 2006·1 cites·16 claims
- 3642US6806027B2Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivativesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 19, 2004·5 cites·14 claims
- 3742US5275920AMethod of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in waterSIEMENS AG·Filed 1991·Granted Jan 4, 1994·6 cites·2 claims
- 3841US2006269879A1Method and apparatus for a post exposure bake of a resistINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3940US5703186AMixed polymersSIEMENS AG·Filed 1996·Granted Dec 30, 1997·5 cites·9 claims
- 4040US5616667ACopolymersSIEMENS AG·Filed 1995·Granted Apr 1, 1997·4 cites·4 claims
- 4139US5733706ADry-developable positive resistSIEMENS AG·Filed 1995·Granted Mar 31, 1998·6 cites·20 claims
- 4239US2008203386A1Method of forming a patterned resist layer for patterning a semiconductor productKLOSTERMANN ULRICH·Filed 2007·Application pending·0 cites
- 4339US2004077180A1Process and control device for the planarization of a semiconductor sampleFiled 2003·Application pending·0 cites
- 4438US7220531B2Resist for electron beam lithography and a process for producing photomasks using electron beam lithographyINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 22, 2007·0 cites·18 claims
- 4538US7157189B2Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resistsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 2, 2007·0 cites·11 claims
- 4637US2004169834A1Optical device for use with a lithography methodINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
- 4737US2006105274A1Method for forming a lithography maskKRAGLER KARL·Filed 2005·Application pending·0 cites
- 4835US6759184B2Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 6, 2004·2 cites·12 claims
- 4935US2005109954A1Apparatus and method for verification of outgassing productsFiled 2004·Application pending·0 cites
- 5035US2003082483A1Chemically amplified photoresist and process for structuring substrates having resist copolymers with enhanced transparency resulting from fluorinating the photochemically cleavable leaving groups and being applicable to 157 nm photolithographyFiled 2002·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →