Inventor · disambiguated record
Joseph D. Cuchiaro
Also filed as: CUCHIARO JOSEPH D
43 granted patents·6 pending applications·2,114 citations·filing 1992–2004
99Inventor score
Top patents by PatentIndex Score
49 records- 0198US5519234AFerroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage currentSYMETRIX CORP·Filed 1993·Granted May 21, 1996·441 cites·23 claims
- 0295US6198225B1Ferroelectric flat panel displaysSYMETRIX CORP·Filed 1999·Granted Mar 6, 2001·109 cites·52 claims
- 0394US6365927B1Ferroelectric integrated circuit having hydrogen barrier layerSYMETRIX CORP·Filed 2000·Granted Apr 2, 2002·76 cites·21 claims
- 0494US6051858AFerroelectric/high dielectric constant integrated circuit and method of fabricating sameSYMETRIX CORP·Filed 1997·Granted Apr 18, 2000·125 cites·10 claims
- 0591US5434102AProcess for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 1993·Granted Jul 18, 1995·109 cites·44 claims
- 0689US6225656B1Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating sameSYMETRIX CORP·Filed 1998·Granted May 1, 2001·74 cites·46 claims
- 0788US6686489B2Metal organic precursors for transparent metal oxide thin films and method of making sameSYMETRIX CORP·Filed 2001·Granted Feb 3, 2004·16 cites·17 claims
- 0888US6495878B1Interlayer oxide containing thin films for high dielectric constant applicationSYMETRIX CORP·Filed 1999·Granted Dec 17, 2002·64 cites·36 claims
- 0986US5708302ABottom electrode structure for dielectric capacitorsSYMETRIX CORP·Filed 1995·Granted Jan 13, 1998·65 cites·20 claims
- 1086US5463244AAntifuse programmable element using ferroelectric materialSYMETRIX CORP·Filed 1994·Granted Oct 31, 1995·104 cites·22 claims
- 1185US6541279B2Method for forming an integrated circuitSYMETRIX CORP·Filed 2001·Granted Apr 1, 2003·24 cites·41 claims
- 1283US6559469B1Ferroelectric and high dielectric constant transistorsSYMETRIX CORP·Filed 2000·Granted May 6, 2003·28 cites·53 claims
- 1383US5614018AIntegrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1994·Granted Mar 25, 1997·78 cites·28 claims
- 1482US6056994ALiquid deposition methods of fabricating layered superlattice materialsSYMETRIX CORP·Filed 1995·Granted May 2, 2000·63 cites·37 claims
- 1582US5423285AProcess for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applicationsOLYMPUS OPTICAL CO·Filed 1992·Granted Jun 13, 1995·76 cites·19 claims
- 1681US5439845AProcess for fabricating layered superlattice materials and making electronic devices including sameOLYMPUS OPTICAL CO·Filed 1994·Granted Aug 8, 1995·55 cites·5 claims
- 1779US6358758B2Low imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 2001·Granted Mar 19, 2002·18 cites·9 claims
- 1879US6165802AMethod of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradationSYMETRIX CORP·Filed 1998·Granted Dec 26, 2000·53 cites·13 claims
- 1978US6376691B1Metal organic precursors for transparent metal oxide thin films and method of making sameSYMETRIX CORP·Filed 1999·Granted Apr 23, 2002·15 cites·27 claims
- 2077US6281534B1Low imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1998·Granted Aug 28, 2001·40 cites·15 claims
- 2174US6339238B1Ferroelectric field effect transistor, memory utilizing same, and method of operating sameSYMETRIX CORP·Filed 1999·Granted Jan 15, 2002·36 cites·24 claims
- 2271US6372286B1Barium strontium titanate integrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1994·Granted Apr 16, 2002·40 cites·8 claims
- 2369US6512256B1Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating sameSYMETRIX CORP·Filed 1998·Granted Jan 28, 2003·27 cites·10 claims
- 2469US5723171AIntegrated circuit electrode structure and process for fabricating sameSYMETRIX CORP·Filed 1996·Granted Mar 3, 1998·35 cites·18 claims
- 2569US5468679AProcess for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applicationsSYMETRIX CORP·Filed 1993·Granted Nov 21, 1995·43 cites·14 claims
- 2667US5444290AMethod and apparatus for programming antifuse elements using combined AC and DC electric fieldsSYMETRIX CORP·Filed 1994·Granted Aug 22, 1995·25 cites·19 claims
- 2766US6867452B2Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7SYMETRIX CORP·Filed 2002·Granted Mar 15, 2005·7 cites·35 claims
- 2866US6225156B1Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating sameSYMETRIX CORP·Filed 1998·Granted May 1, 2001·27 cites·10 claims
- 2966US6080592AMethod of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applicationsSYMETRIX CORP·Filed 1995·Granted Jun 27, 2000·27 cites·18 claims
- 3066US5784310ALow imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1997·Granted Jul 21, 1998·26 cites·8 claims
- 3164US6130103AMethod for fabricating ferroelectric integrated circuitsSYMETRIX CORP·Filed 1998·Granted Oct 10, 2000·26 cites·35 claims
- 3262US5811847APSZT for integrated circuit applicationsSYMETRIX CORP·Filed 1996·Granted Sep 22, 1998·20 cites·9 claims
- 3360US6207465B1Method of fabricating ferroelectric integrated circuit using dry and wet etchingSYMETRIX CORP·Filed 1998·Granted Mar 27, 2001·23 cites·24 claims
- 3460US6022669AMethod of fabricating an integrated circuit using self-patterned thin filmsSYMETRIX CORP·Filed 1996·Granted Feb 8, 2000·25 cites·34 claims
- 3558US6570202B2Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating sameSYMETRIX CORP·Filed 2001·Granted May 27, 2003·8 cites·9 claims
- 3655US6174213B1Fluorescent lamp and method of manufacturing sameSYMETRIX CORP·Filed 1999·Granted Jan 16, 2001·16 cites·92 claims
- 3753US5825057AProcess for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 1994·Granted Oct 20, 1998·16 cites·10 claims
- 3850US6447838B1Integrated circuit capacitors with barrier layer and process for making the sameSYMETRIX CORP·Filed 1995·Granted Sep 10, 2002·15 cites·19 claims
- 3946US5883828ALow imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1998·Granted Mar 16, 1999·10 cites·3 claims
- 4042US6441414B1Ferroelectric field effect transistor, memory utilizing same, and method of operating sameSYMETRIX CORP·Filed 1998·Granted Aug 27, 2002·7 cites·5 claims
- 4141US6285048B1Barium strontium titanate integrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1993·Granted Sep 4, 2001·9 cites·13 claims
- 4240US5888585AProcess for making an integrated circuit with high dielectric constant barium-strontium-niobium oxideSYMETRIX CORP·Filed 1996·Granted Mar 30, 1999·8 cites·7 claims
- 4340US2006170541A1Smart portable detection apparatus and methodTOMPA GARY S·Filed 2004·Application pending·0 cites
- 4440US2004227094A1Microelectronic radiation detectorFiled 2004·Application pending·0 cites
- 4538US2002125573A1Ferroelectric integrated circuit having hydrogen barrier layerSYMETRIX CORP·Filed 2001·Application pending·0 cites
- 4636US2004051126A1Compositionally engineered CexMnyO3 and semiconductor devices based thereonSTRUCTURED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4736US2001013614A1Iridium oxide diffusion barrier between local interconnect layer and thin film of layered superlattice materialFiled 2001·Application pending·0 cites
- 4835US5751034AHigh dielectric constant barium-strontium-niobium oxides for integrated circuit applicationsSYMETRIX CORP·Filed 1997·Granted May 12, 1998·5 cites·9 claims
- 4934US2005040546A1Radiation hardened microelectronic deviceFiled 2004·Application pending·0 cites
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