Inventor · disambiguated record
Emilie Bourjot
Also filed as: BOURJOT EMILIE · BOURJOT EMILIE M S
12 granted patents·4 pending applications·67 citations·filing 2015–2025
87Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE8GLOBALFOUNDRIES INC7COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1
Top patents by PatentIndex Score
16 records- 0197US10128334B1Field effect transistor having an air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 13, 2018·30 cites·13 claims
- 0296US10388747B1Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structureGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·21 cites·20 claims
- 0393US10559656B2Wrap-all-around contact for nanosheet-FET and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·8 cites·9 claims
- 0488US11715710B2Method of treatment of an electronic circuit for a hybrid molecular bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Aug 1, 2023·2 cites·14 claims
- 0584US11694991B2Method for transferring chipsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jul 4, 2023·1 cites·16 claims
- 0674US10236296B1Cross-coupled contact structure on IC products and methods of making such contact structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·2 cites·20 claims
- 0767US10381354B2Contact structures and methods of making the contact structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 13, 2019·1 cites·20 claims
- 0867US10230000B2Vertical-transport transistors with self-aligned contactsGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 12, 2019·1 cites·19 claims
- 0961US9548210B2Fabrication method of a transistor with improved field effectCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 17, 2017·1 cites·16 claims
- 1060US2025014912A1Method for protecting active layers of electronic chipsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1157US2025194268A1Protocol for thinning the rear substrate of individual chips attached by hybrid bonding of die-to-wafer typeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1257US2024178161A1Electronic deviceCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 1354US2025364459A1Electronic die assembly comprising superconducting interconnection padsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 1452US12477658B2Electronic circuit manufacturing method for self-assembly to another electronic circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Nov 18, 2025·0 cites·15 claims
- 1552US11990436B2Electronic circuit for a hybrid molecular bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted May 21, 2024·0 cites·10 claims
- 1640US10797138B2Vertical-transport field-effect transistors with self-aligned contactsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 6, 2020·0 cites·10 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →