Inventor · disambiguated record
Chen Zhang
Also filed as: ZHANG CHEN · ZHANG CHEN-XIONG
410 granted patents·113 pending applications·1,571 citations·filing 1995–2025
99Inventor score
Files withIBM384HUAWEI TECH CO LTD30FUTUREWEI TECHNOLOGIES INC21BOE TECHNOLOGY GROUP CO LTD9DOLBY LABORATORIES LICENSING CORP9
Top patents by PatentIndex Score
523 records- 0199US11665877B1Stacked FET SRAM designIBM·Filed 2021·Granted May 30, 2023·5 cites·18 claims
- 0299US11251362B2Stacked spin-orbit-torque magnetoresistive random-access memoryIBM·Filed 2020·Granted Feb 15, 2022·9 cites·18 claims
- 0399US9899515B1Fabrication of a pair of vertical fin field effect transistors having a merged top source/drainIBM·Filed 2016·Granted Feb 20, 2018·46 cites·13 claims
- 0499US9859409B2Single-electron transistor with wrap-around gateIBM·Filed 2016·Granted Jan 2, 2018·28 cites·17 claims
- 0599US9859166B1Vertical field effect transistor having U-shaped top spacerIBM·Filed 2017·Granted Jan 2, 2018·52 cites·20 claims
- 0699US9853028B1Vertical FET with reduced parasitic capacitanceIBM·Filed 2017·Granted Dec 26, 2017·33 cites·20 claims
- 0799US9721897B1Transistor with air spacer and self-aligned contactIBM·Filed 2016·Granted Aug 1, 2017·52 cites·12 claims
- 0898US11757036B2Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devicesIBM·Filed 2021·Granted Sep 12, 2023·4 cites·14 claims
- 0998US10424639B1Nanosheet transistor with high-mobility channelIBM·Filed 2018·Granted Sep 24, 2019·33 cites·20 claims
- 1098US10297513B1Stacked vertical NFET and PFETIBM·Filed 2017·Granted May 21, 2019·34 cites·21 claims
- 1198US10229971B1Integration of thick and thin nanosheet transistors on a single chipIBM·Filed 2017·Granted Mar 12, 2019·36 cites·20 claims
- 1298US10032867B1Forming bottom isolation layer for nanosheet technologyIBM·Filed 2017·Granted Jul 24, 2018·38 cites·10 claims
- 1398US9899372B1Forming on-chip metal-insulator-semiconductor capacitorIBM·Filed 2016·Granted Feb 20, 2018·31 cites·6 claims
- 1498US9842914B1Nanosheet FET with wrap-around inner spacerIBM·Filed 2016·Granted Dec 12, 2017·34 cites·20 claims
- 1598US9799655B1Flipped vertical field-effect-transistorIBM·Filed 2016·Granted Oct 24, 2017·21 cites·7 claims
- 1698US9761728B1Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the sameIBM·Filed 2016·Granted Sep 12, 2017·33 cites·20 claims
- 1798US9741717B1FinFETs with controllable and adjustable channel dopingIBM·Filed 2016·Granted Aug 22, 2017·23 cites·17 claims
- 1897US10985064B2Buried power and ground in stacked vertical transport field effect transistorsIBM·Filed 2019·Granted Apr 20, 2021·19 cites·19 claims
- 1997US10141448B1Vertical FETs with different gate lengths and spacer thicknessesIBM·Filed 2017·Granted Nov 27, 2018·22 cites·20 claims
- 2097US10090412B1Vertical transistor with back bias and reduced parasitic capacitanceIBM·Filed 2017·Granted Oct 2, 2018·15 cites·2 claims
- 2197US10083871B2Fabrication of a vertical transistor with self-aligned bottom source/drainIBM·Filed 2016·Granted Sep 25, 2018·16 cites·20 claims
- 2297US9935195B1Reduced resistance source and drain extensions in vertical field effect transistorsIBM·Filed 2017·Granted Apr 3, 2018·16 cites·19 claims
- 2397US9768085B1Top contact resistance measurement in vertical FETsIBM·Filed 2016·Granted Sep 19, 2017·17 cites·14 claims
- 2497US9721845B1Vertical field effect transistors with bottom contact metal directly beneath finsIBM·Filed 2016·Granted Aug 1, 2017·21 cites·20 claims
- 2597US9653458B1Integrated device with P-I-N diodes and vertical field effect transistorsIBM·Filed 2016·Granted May 16, 2017·18 cites·20 claims
- 2697US9607899B1Integration of vertical transistors with 3D long channel transistorsIBM·Filed 2016·Granted Mar 28, 2017·22 cites·20 claims
- 2796US12154985B2Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devicesIBM·Filed 2023·Granted Nov 26, 2024·2 cites·16 claims
- 2896US11548349B2Thermal management system and electric vehicle having the sameGUANGZHOU AUTOMOBILE GROUP CO·Filed 2021·Granted Jan 10, 2023·5 cites·20 claims
- 2996US11139215B2Hybrid gate stack integration for stacked vertical transport field-effect transistorsIBM·Filed 2020·Granted Oct 5, 2021·3 cites·20 claims
- 3096US10777468B1Stacked vertical field-effect transistors with sacrificial layer patterningIBM·Filed 2019·Granted Sep 15, 2020·14 cites·20 claims
- 3196US10692768B1Vertical transport field-effect transistor architectureIBM·Filed 2019·Granted Jun 23, 2020·13 cites·20 claims
- 3296US10566445B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gatesIBM·Filed 2018·Granted Feb 18, 2020·11 cites·10 claims
- 3396US10297667B1Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistorIBM·Filed 2017·Granted May 21, 2019·19 cites·16 claims
- 3496US9865705B2Vertical field effect transistors with bottom source/drain epitaxyIBM·Filed 2016·Granted Jan 9, 2018·10 cites·20 claims
- 3595US11798851B2Work function metal patterning for nanosheet CFETsIBM·Filed 2020·Granted Oct 24, 2023·3 cites·13 claims
- 3695USD904724SSafeSHENZHEN XINGCHEN TECH CO LTD·Filed 2020·Granted Dec 8, 2020·41 cites·1 claims
- 3795US10483166B1Vertically stacked transistorsIBM·Filed 2018·Granted Nov 19, 2019·24 cites·16 claims
- 3895US10032676B1Vertical field effect transistor having U-shaped top spacerIBM·Filed 2017·Granted Jul 24, 2018·9 cites·20 claims
- 3995US9985107B2Method and structure for forming MOSFET with reduced parasitic capacitanceIBM·Filed 2016·Granted May 29, 2018·13 cites·6 claims
- 4095US9653602B1Tensile and compressive fins for vertical field effect transistorsIBM·Filed 2016·Granted May 16, 2017·14 cites·20 claims
- 4194US10340364B2H-shaped VFET with increased current drivabilityIBM·Filed 2017·Granted Jul 2, 2019·11 cites·20 claims
- 4294US10312350B1Nanosheet with changing SiGe percentage for SiGe lateral recessIBM·Filed 2017·Granted Jun 4, 2019·7 cites·15 claims
- 4394US10217674B1Three-dimensional monolithic vertical field effect transistor logic gatesIBM·Filed 2017·Granted Feb 26, 2019·16 cites·9 claims
- 4494US10103246B2Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edgesIBM·Filed 2016·Granted Oct 16, 2018·8 cites·20 claims
- 4594US9722125B1Radiation sensor, method of forming the sensor and device including the sensorIBM·Filed 2016·Granted Aug 1, 2017·8 cites·25 claims
- 4693US11621326B2Vertical field effect transistor with crosslink fin arrangementIBM·Filed 2020·Granted Apr 4, 2023·2 cites·6 claims
- 4793US11609274B2Battery state detection device and vehicle deviceGUANGZHOU AUTOMOBILE GROUP CO·Filed 2021·Granted Mar 21, 2023·3 cites·18 claims
- 4893US11081546B2Isolation structure for stacked vertical transistorsIBM·Filed 2019·Granted Aug 3, 2021·6 cites·20 claims
- 4993US10615256B2Nanosheet transistor gate structure having reduced parasitic capacitanceIBM·Filed 2018·Granted Apr 7, 2020·7 cites·20 claims
- 5093US10361200B1Vertical fin field effect transistor with integral U-shaped electrical gate connectionIBM·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
Showing the top 50 of 523 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chen Zhang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →