Inventor · disambiguated record
John J. Drab
Also filed as: DRAB JOHN · DRAB JOHN J
39 granted patents·2 pending applications·470 citations·filing 1994–2023
97Inventor score
Top patents by PatentIndex Score
41 records- 0196US6101102AFixed frequency regulation circuit employing a voltage variable dielectric capacitorRAYTHEON CO·Filed 1999·Granted Aug 8, 2000·199 cites·10 claims
- 0290US9887195B1Coaxial connector feed-through for multi-level interconnected semiconductor wafersRAYTHEON CO·Filed 2016·Granted Feb 6, 2018·9 cites·5 claims
- 0386US10541461B2Tile for an active electronically scanned array (AESA)RAYTHEON CO·Filed 2016·Granted Jan 21, 2020·6 cites·19 claims
- 0486US10242967B2Die encapsulation in oxide bonded wafer stackRAYTHEON CO·Filed 2017·Granted Mar 26, 2019·4 cites·22 claims
- 0585US8261372B2Golf gloveDRAB JOHN·Filed 2008·Granted Sep 11, 2012·25 cites·16 claims
- 0684US10354975B2Barrier layer for interconnects in 3D integrated deviceRAYTHEON CO·Filed 2016·Granted Jul 16, 2019·5 cites·15 claims
- 0782US6803794B2Differential capacitance sense amplifierRAYTHEON CO·Filed 2003·Granted Oct 12, 2004·38 cites·36 claims
- 0878US7273942B1Water-soluble group III polyether acid salt complexes and thin films from sameRAYTHEON CO·Filed 2004·Granted Sep 25, 2007·7 cites·8 claims
- 0974US8053251B2Temperature-compensated ferroelectric capacitor device, and its fabricationRAYTHEON CO·Filed 2005·Granted Nov 8, 2011·5 cites·22 claims
- 1073US12354911B2Cu3Sn via metallization in electrical devices for low-temperature 3D-integrationRAYTHEON CO·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1172US9224768B2Pin diode structure having surface charge suppressionRAYTHEON CO·Filed 2013·Granted Dec 29, 2015·2 cites·4 claims
- 1272US7675066B1Erase-on-demand memory cellRAYTHEON CO·Filed 2005·Granted Mar 9, 2010·10 cites·2 claims
- 1370US6054600ANon-toxic solvent soluble group IV and V metal acid salt complexes using polyether acid anhydridesRAYTHEON CO·Filed 1999·Granted Apr 25, 2000·11 cites·20 claims
- 1469US10128297B2Pin diode structure having surface charge suppressionRAYTHEON CO·Filed 2015·Granted Nov 13, 2018·1 cites·18 claims
- 1569USD594159SGolf gloveUNDER ARMOUR INC·Filed 2008·Granted Jun 9, 2009·17 cites·1 claims
- 1667US5638252AElectrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitorHUGHES AIRCRAFT CO·Filed 1995·Granted Jun 10, 1997·25 cites·14 claims
- 1766US5487030AFerroelectric interruptible read memoryHUGHES AIRCRAFT CO·Filed 1994·Granted Jan 23, 1996·25 cites·8 claims
- 1865US5966318ANondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiersRAYTHEON CO·Filed 1996·Granted Oct 12, 1999·24 cites·13 claims
- 1960US10971538B2PiN diode structure having surface charge suppressionRAYTHEON CO·Filed 2018·Granted Apr 6, 2021·0 cites·4 claims
- 2060US7635761B2Water-soluble group III polyether acid salt complexes and thin films from sameRAYTHEON CO·Filed 2007·Granted Dec 22, 2009·0 cites·6 claims
- 2159US11854879B2Cu3Sn via metallization in electrical devices for low-temperature 3D-integrationRAYTHEON CO·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2259US11177155B2Direct bond method providing thermal expansion matched devicesRAYTHEON CO·Filed 2019·Granted Nov 16, 2021·0 cites·5 claims
- 2359US10784234B2Die encapsulation in oxide bonded wafer stackRAYTHEON CO·Filed 2019·Granted Sep 22, 2020·0 cites·9 claims
- 2458US10679888B2Foundry-agnostic post-processing method for a waferRAYTHEON CO·Filed 2019·Granted Jun 9, 2020·0 cites·7 claims
- 2556US11387916B1Three-dimensional wafer-stacked optical and radio frequency phased array transceiver systemRAYTHEON CO·Filed 2021·Granted Jul 12, 2022·0 cites·13 claims
- 2656US7683854B2Tunable impedance surface and method for fabricating a tunable impedance surfaceRAYTHEON CO·Filed 2006·Granted Mar 23, 2010·3 cites·8 claims
- 2755US6617629B1Optically readable ferroelectric memory cellUS NAVY·Filed 2002·Granted Sep 9, 2003·8 cites·9 claims
- 2854US5729488ANon-destructive read ferroelectric memory cell utilizing the ramer-drab effectHUGHES AIRCRAFT CO·Filed 1994·Granted Mar 17, 1998·15 cites·17 claims
- 2953US11659660B2Oxide liner stress bufferRAYTHEON CO·Filed 2019·Granted May 23, 2023·0 cites·20 claims
- 3052US10453731B2Direct bond method providing thermal expansion matched devicesRAYTHEON CO·Filed 2016·Granted Oct 22, 2019·0 cites·19 claims
- 3151US2019267353A1Barrier layer for interconnects in 3d integrated deviceRAYTHEON CO·Filed 2019·Application pending·0 cites
- 3250US7545625B2Electrode for thin film capacitor devicesRAYTHEON CO·Filed 2007·Granted Jun 9, 2009·0 cites·14 claims
- 3347US6984745B2Environmentally benign lead zirconate titanate ceramic precursor materialsRAYTHEON CO·Filed 2004·Granted Jan 10, 2006·0 cites·17 claims
- 3446US10354910B2Foundry-agnostic post-processing method for a waferRAYTHEON CO·Filed 2016·Granted Jul 16, 2019·0 cites·12 claims
- 3545US10418406B2Hybrid sensor chip assembly and method for reducing radiative transfer between a detector and read-out integrated circuitRAYTHEON CO·Filed 2017·Granted Sep 17, 2019·0 cites·19 claims
- 3644US6303804B1Environmentally benign bismuth-containing spin-on precursor materialsRAYTHEON CO·Filed 1999·Granted Oct 16, 2001·11 cites·13 claims
- 3742US5804823ABismuth layered structure pyroelectric detectorsRAYTHEON CO·Filed 1995·Granted Sep 8, 1998·11 cites·13 claims
- 3837US6316651B1Environmentally benign Group II and Group IV or V spin-on precursor materialsRAYTHEON CO·Filed 1999·Granted Nov 13, 2001·7 cites·13 claims
- 3936US7335552B2Electrode for thin film capacitor devicesRAYTHEON CO·Filed 2002·Granted Feb 26, 2008·0 cites·22 claims
- 4036US2004061990A1Temperature-compensated ferroelectric capacitor device, and its fabricationFiled 2002·Application pending·0 cites
- 4129US6045030ASealing electronic packages containing bumped hybridsRAYTHEON CO·Filed 1997·Granted Apr 4, 2000·2 cites·13 claims
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