Inventor · disambiguated record
Justin K. Brask
Also filed as: BRASK JUSTIN · BRASK JUSTIN K
187 granted patents·75 pending applications·6,623 citations·filing 2002–2021
99Inventor score
Top patents by PatentIndex Score
262 records- 0199US7531437B2Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric materialINTEL CORP·Filed 2006·Granted May 12, 2009·195 cites·10 claims
- 0299US7518196B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2005·Granted Apr 14, 2009·72 cites·22 claims
- 0399US7105390B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2003·Granted Sep 12, 2006·416 cites·36 claims
- 0498US8294180B2CMOS devices with a single work function gate electrode and method of fabricationDOYLE BRIAN S·Filed 2011·Granted Oct 23, 2012·37 cites·14 claims
- 0598US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 0698US7893506B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2010·Granted Feb 22, 2011·35 cites·10 claims
- 0798US7569443B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateINTEL CORP·Filed 2005·Granted Aug 4, 2009·72 cites·9 claims
- 0898US7547637B2Methods for patterning a semiconductor filmINTEL CORP·Filed 2005·Granted Jun 16, 2009·52 cites·8 claims
- 0998US7485503B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2005·Granted Feb 3, 2009·63 cites·13 claims
- 1098US7479421B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyINTEL CORP·Filed 2005·Granted Jan 20, 2009·105 cites·2 claims
- 1198US7407847B2Stacked multi-gate transistor design and method of fabricationINTEL CORP·Filed 2006·Granted Aug 5, 2008·99 cites·19 claims
- 1298US7332439B2Metal gate transistors with epitaxial source and drain regionsINTEL CORP·Filed 2004·Granted Feb 19, 2008·144 cites·14 claims
- 1398US7326656B2Method of forming a metal oxide dielectricINTEL CORP·Filed 2006·Granted Feb 5, 2008·456 cites·19 claims
- 1498US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 1598US7170120B2Carbon nanotube energy well (CNEW) field effect transistorINTEL CORP·Filed 2005·Granted Jan 30, 2007·149 cites·15 claims
- 1697US7550333B2Nonplanar device with thinned lower body portion and method of fabricationINTEL CORP·Filed 2006·Granted Jun 23, 2009·50 cites·15 claims
- 1797US7525160B2Multigate device with recessed strain regionsINTEL CORP·Filed 2005·Granted Apr 28, 2009·65 cites·14 claims
- 1897US7355281B2Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2006·Granted Apr 8, 2008·47 cites·12 claims
- 1997US7316949B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2005·Granted Jan 8, 2008·50 cites·13 claims
- 2097US7226831B1Device with scavenging spacer layerINTEL CORP·Filed 2005·Granted Jun 5, 2007·60 cites·8 claims
- 2197US7208361B2Replacement gate process for making a semiconductor device that includes a metal gate electrodeINTEL CORP·Filed 2004·Granted Apr 24, 2007·128 cites·20 claims
- 2297US7126199B2Multilayer metal gate electrodeINTEL CORP·Filed 2004·Granted Oct 24, 2006·154 cites·5 claims
- 2396US8129795B2Inducing strain in the channels of metal gate transistorsDATTA SUMAN·Filed 2011·Granted Mar 6, 2012·29 cites·5 claims
- 2496US8071983B2Semiconductor device structures and methods of forming semiconductor structuresBRASK JUSTIN K·Filed 2009·Granted Dec 6, 2011·29 cites·20 claims
- 2596US7902014B2CMOS devices with a single work function gate electrode and method of fabricationINTEL CORP·Filed 2007·Granted Mar 8, 2011·35 cites·7 claims
- 2696US7879675B2Field effect transistor with metal source/drain regionsINTEL CORP·Filed 2008·Granted Feb 1, 2011·36 cites·8 claims
- 2796US7425500B2Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistorsINTEL CORP·Filed 2006·Granted Sep 16, 2008·45 cites·16 claims
- 2896US7361958B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2004·Granted Apr 22, 2008·86 cites·13 claims
- 2996US7329913B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2004·Granted Feb 12, 2008·114 cites·18 claims
- 3096US7317231B2Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrodeINTEL CORP·Filed 2005·Granted Jan 8, 2008·35 cites·20 claims
- 3196US7271045B2Etch stop and hard mask film property matching to enable improved replacement metal gate processINTEL CORP·Filed 2005·Granted Sep 18, 2007·45 cites·13 claims
- 3296US7153784B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 26, 2006·86 cites·48 claims
- 3396US7148548B2Semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 12, 2006·117 cites·27 claims
- 3496US6858483B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2002·Granted Feb 22, 2005·81 cites·8 claims
- 3595US9741809B2Nonplanar device with thinned lower body portion and method of fabricationINTEL CORP·Filed 2015·Granted Aug 22, 2017·8 cites·13 claims
- 3695US8502351B2Nonplanar device with thinned lower body portion and method of fabricationSHAH UDAY·Filed 2011·Granted Aug 6, 2013·17 cites·11 claims
- 3795US8193567B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyKAVALIEROS JACK T·Filed 2008·Granted Jun 5, 2012·33 cites·4 claims
- 3895US7785958B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2008·Granted Aug 31, 2010·38 cites·3 claims
- 3995US7595248B2Angled implantation for removal of thin film layersINTEL CORP·Filed 2005·Granted Sep 29, 2009·28 cites·8 claims
- 4095US7528025B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2007·Granted May 5, 2009·52 cites·7 claims
- 4195US7157378B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jan 2, 2007·107 cites·20 claims
- 4295US7071064B2U-gate transistors and methods of fabricationINTEL CORP·Filed 2004·Granted Jul 4, 2006·96 cites·37 claims
- 4395US7060576B2Epitaxially deposited source/drainINTEL CORP·Filed 2003·Granted Jun 13, 2006·72 cites·17 claims
- 4495US6946350B2Controlled faceting of source/drain regionsINTEL CORP·Filed 2003·Granted Sep 20, 2005·98 cites·12 claims
- 4595US6696327B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2003·Granted Feb 24, 2004·85 cites·2 claims
- 4694US8183646B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationCHAU ROBERT S·Filed 2011·Granted May 22, 2012·12 cites·18 claims
- 4794US7989280B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2008·Granted Aug 2, 2011·20 cites·11 claims
- 4894US7465976B2Tunneling field effect transistor using angled implants for forming asymmetric source/drain regionsINTEL CORP·Filed 2005·Granted Dec 16, 2008·37 cites·11 claims
- 4994US7381608B2Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 3, 2008·85 cites·20 claims
- 5094US7220635B2Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layerINTEL CORP·Filed 2003·Granted May 22, 2007·78 cites·20 claims
Showing the top 50 of 262 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →