Inventor · disambiguated record
Seok-Woo Nam
Also filed as: NAM SEOK-WOO
33 granted patents·8 pending applications·213 citations·filing 1998–2019
97Inventor score
Top patents by PatentIndex Score
41 records- 0193US9997538B2Semiconductor device including channel structureSON YONG HOON·Filed 2017·Granted Jun 12, 2018·10 cites·20 claims
- 0293US9595612B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 14, 2017·5 cites·30 claims
- 0392US9455259B2Semiconductor devices including diffusion barriers with high electronegativity metalsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 27, 2016·11 cites·20 claims
- 0488US9263588B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 16, 2016·3 cites·25 claims
- 0588US7741222B2Etch stop structure and method of manufacture, and semiconductor device and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 22, 2010·17 cites·11 claims
- 0686US8604550B2Semiconductor devices including gate structure and method of fabricating the sameLEE KWANG-WOOK·Filed 2011·Granted Dec 10, 2013·10 cites·18 claims
- 0786US8519465B2Semiconductor device and method of fabricating the sameKIM JUNG-HWAN·Filed 2012·Granted Aug 27, 2013·4 cites·20 claims
- 0886US8247859B2Semiconductor device and method of fabricating the sameKIM JUNG-HWAN·Filed 2011·Granted Aug 21, 2012·4 cites·18 claims
- 0982US8012823B2Methods of fabricating stack type capacitors of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·8 cites·19 claims
- 1080US8969939B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·2 cites·20 claims
- 1180US6329266B1Methods of forming isolation trenches including damaging a trench isolation maskSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 11, 2001·59 cites·22 claims
- 1279US7928495B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Apr 19, 2011·2 cites·3 claims
- 1379US7833875B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·3 cites·18 claims
- 1477US9153590B2Semiconductor devices including buried channelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 6, 2015·4 cites·20 claims
- 1568US7521375B2Method of forming an oxinitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·23 claims
- 1664US9847422B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·0 cites·19 claims
- 1764US9184232B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·0 cites·20 claims
- 1863US7119392B2Storage electrode of a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 10, 2006·2 cites·21 claims
- 1961US6838719B2Dram cell capacitors having U-shaped electrodes with rough inner and outer surfacesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 4, 2005·10 cites·2 claims
- 2060US8039344B2Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 18, 2011·1 cites·15 claims
- 2160US6214688B1Methods of forming integrated circuit capacitors having U-shaped electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 10, 2001·19 cites·14 claims
- 2259US9230922B2Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·0 cites·17 claims
- 2358US6013549ADRAM cell capacitor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 11, 2000·17 cites·15 claims
- 2458US2019272979A1Method of processing a substrate using an ion beam and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 2557US7153750B2Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 26, 2006·7 cites·21 claims
- 2656US10410839B2Method of processing a substrate using an ion beam and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 10, 2019·0 cites·15 claims
- 2751US8481398B2Method of forming semiconductor device having a capacitorCHUNG SEUNG-SIK·Filed 2010·Granted Jul 9, 2013·1 cites·20 claims
- 2849US7238585B2Method of forming a storage electrode of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 3, 2007·0 cites·20 claims
- 2944US7297620B2Method of forming an oxide layer including increasing the temperature during oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·0 cites·24 claims
- 3044US2011222207A1Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the sameLEE TAE-JONG·Filed 2011·Application pending·0 cites
- 3144US2014231958A1Capacitors having dielectric layers with different band gaps and semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3243US9449973B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 20, 2016·0 cites·20 claims
- 3343US2005153518A1Method for forming capacitor using etching stopper film in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3442US7119029B2Method of oxidizing a silicon substrate and method of forming an oxide layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 10, 2006·0 cites·14 claims
- 3542US6133109AMethod for manufacturing a DRAM cell capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 17, 2000·9 cites·5 claims
- 3639US2006160337A1Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the sameKIM YOUNG-JIN·Filed 2005·Application pending·0 cites
- 3738US2007022941A1Method of forming a layer and method of manufacturing a semiconductor device using the samePARK JAE-YOUNG·Filed 2006·Application pending·0 cites
- 3836US2006267019A1Capacitor and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3934US6215143B1DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage nodeSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 10, 2001·3 cites·4 claims
- 4032US2012082367A1Method of forming image of semiconductor device, and method of detecting a defect of the semiconductor device by using the image forming methodBYUN JUNG-HOON·Filed 2011·Application pending·0 cites
- 4129US7282407B1Semiconductor memory device and method of manufacturing for preventing bit line oxidationSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 16, 2007·0 cites·27 claims
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