Inventor · disambiguated record
El-Badawy Amien El-Sharawy
Also filed as: EL-SHARAWY EL-BADAWY · EL-SHARAWY EL-BADAWY AMIEN
11 granted patents·3 pending applications·367 citations·filing 1997–2002
92Inventor score
Files withNAT SCIENT CORP9
Top patents by PatentIndex Score
14 records- 0193US6301147B1Electronic semiconductor circuit which includes a tunnel diodeNAT SCIENT CORP·Filed 2000·Granted Oct 9, 2001·93 cites·22 claims
- 0291US6104631AStatic memory cell with load circuit using a tunnel diodeNAT SCIENT CORP·Filed 1997·Granted Aug 15, 2000·103 cites·20 claims
- 0382US6424227B1Monolithic balanced RF power amplifierNAT SCIENT CORP·Filed 2001·Granted Jul 23, 2002·35 cites·22 claims
- 0477US6013939AMonolithic inductor with magnetic flux lines guided away from substrateNAT SCIENT CORP·Filed 1997·Granted Jan 11, 2000·48 cites·21 claims
- 0564US6423990B1Vertical heterojunction bipolar transistorNAT SCIENT CORP·Filed 1999·Granted Jul 23, 2002·20 cites·2 claims
- 0659US6169467B1Dielectric resonator comprising a dielectric resonator disk having a holeFiled 1998·Granted Jan 2, 2001·13 cites·21 claims
- 0758US6281778B1Monolithic inductor with magnetic flux lines guided away from substrateNAT SCIENT CORP·Filed 1999·Granted Aug 28, 2001·21 cites·15 claims
- 0852US6008694ADistributed amplifier and method thereforNAT SCIENT CORP·Filed 1998·Granted Dec 28, 1999·15 cites·21 claims
- 0949US5912481AHeterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junctionNAT SCIENT CORP·Filed 1997·Granted Jun 15, 1999·10 cites·14 claims
- 1046US6171920B1Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junctionFiled 1999·Granted Jan 9, 2001·9 cites·20 claims
- 1136US2002179933A1Vertical heterojunction bipolar transistorFiled 2002·Application pending·0 cites
- 1235US2003059687A1Anti-resonance mask for off-axis photolithographyNAT SCIENT CORP·Filed 2001·Application pending·0 cites
- 1334US6545571B2Tunable HEογδ mode dielectric resonatorFiled 2001·Granted Apr 8, 2003·0 cites·20 claims
- 1430US2003048655A1Semiconductor memory cell with leakage current compensation using a tunnel diodeFiled 2001·Application pending·0 cites
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