Inventor · disambiguated record
Yun Chen Hsieh
Also filed as: HSIEH YUN CHEN
21 granted patents·1 pending application·49 citations·filing 2016–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22
Top patents by PatentIndex Score
22 records- 0199US11651994B2Processes for reducing leakage and improving adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·5 cites·20 claims
- 0297US10361122B1Processes for reducing leakage and improving adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·14 cites·20 claims
- 0395US10964591B2Processes for reducing leakage and improving adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·7 cites·20 claims
- 0494US10515848B1Semiconductor package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·9 cites·20 claims
- 0591US11404308B2Semiconductor package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 0686US10840129B2Semiconductor package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 0786US10186462B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 22, 2019·4 cites·21 claims
- 0884US12020983B2Processes for reducing leakage and improving adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 0981US12315819B2Method of forming RDLs and structure formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1080US10522501B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 1177US12062603B2Semiconductor device having via sidewall adhesion with encapsulantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1274US11587902B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 21, 2023·1 cites·20 claims
- 1374US10971442B2Semiconductor device having via sidewall adhesion with encapsulantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·1 cites·20 claims
- 1474US2025300125A1Semiconductor structure having a conductive feature comprising an adhesion layer and a metal region over and contacting the adhesion layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1573US10867874B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 1672US12381176B2Semiconductor structure having a conductive feature comprising an adhesion layer and a metal region over and contacting the adhesion layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 1772US11527466B2Semiconductor device having via sidewall adhesion with encapsulantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 1871US11600574B2Method of forming RDLS and structure formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 1962US11742317B2Process including a re-etching process for forming a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 29, 2023·0 cites·20 claims
- 2062US10886231B2Method of forming RDLS and structure formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·0 cites·20 claims
- 2159US10892228B2Method of manufacturing conductive feature and method of manufacturing packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 2252US10297551B2Method of manufacturing redistribution circuit structure and method of manufacturing integrated fan-out packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 21, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →