Inventor · disambiguated record
Renren He
Also filed as: HE RENREN
1 granted patent·5 pending applications·16 citations·filing 2001–2008
37Inventor score
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6 records- 0165US6746591B2ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside featureAPPLIED MATERIALS INC·Filed 2001·Granted Jun 8, 2004·16 cites·28 claims
- 0250US2009120799A1Multiple-step electrodeposition process for direct copper plating on barrier metalsSUN ZHI-WEN·Filed 2008·Application pending·0 cites
- 0339US2007125657A1Method of direct plating of copper on a substrate structureSUN ZHI-WEN·Filed 2005·Application pending·0 cites
- 0438US2005006245A1Multiple-step electrodeposition process for direct copper plating on barrier metalsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 0536US2005274622A1Plating chemistry and method of single-step electroplating of copper on a barrier metalSUN ZHI-WEN·Filed 2004·Application pending·0 cites
- 0634US2005274621A1Method of barrier layer surface treatment to enable direct copper plating on barrier metalSUN ZHI-WEN·Filed 2004·Application pending·0 cites
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