Inventor · disambiguated record
Eungjung Yoon
Also filed as: YOON EUNGJUNG
2 granted patents·158 citations·filing 2005–2007
70Inventor score
Technology areasH10D
Files withSAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
2 records- 0195US7374986B2Method of fabricating field effect transistor (FET) having wire channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 20, 2008·107 cites·20 claims
- 0293US7274051B2Field effect transistor (FET) having wire channels and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·51 cites·41 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →