Inventor · disambiguated record
Yasuo Ohno
Also filed as: OHNO YASUO
40 granted patents·9 pending applications·914 citations·filing 1981–2024
98Inventor score
Top patents by PatentIndex Score
49 records- 0196US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0295US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0393US7532479B2Spread illuminating apparatusMINEBEA CO LTD·Filed 2007·Granted May 12, 2009·27 cites·3 claims
- 0492US4552312AFuel injection valveTOHOKU MIKUNI KOGYO CO LTD·Filed 1984·Granted Nov 12, 1985·55 cites·9 claims
- 0591US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 0690US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 0789US7530723B2Spread illuminating apparatusMINEBEA CO LTD·Filed 2007·Granted May 12, 2009·20 cites·4 claims
- 0889US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 0988US5958453ASolid pharmaceutical preparation with improved buccal disintegrability and/or dissolubilityTAKEDA CHEMICAL INDUSTRIES LTD·Filed 1997·Granted Sep 28, 1999·70 cites·18 claims
- 1086US6248357B1Solid pharmaceutical preparation with improved buccal disintegrability and/or dissolubilityTAKEDA CHEMICAL INDUSTRIES LTD·Filed 1999·Granted Jun 19, 2001·61 cites·16 claims
- 1183US6373082B1Compound semiconductor field effect transistorNEC CORP·Filed 1998·Granted Apr 16, 2002·69 cites·16 claims
- 1279US6476431B1Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the sameNEC CORP·Filed 1999·Granted Nov 5, 2002·43 cites·8 claims
- 1377US7575360B2Spread illuminating apparatusMINEBEA CO LTD·Filed 2007·Granted Aug 18, 2009·8 cites·8 claims
- 1474US7810978B2Spread illuminating apparatusMINEBEA CO LTD·Filed 2007·Granted Oct 12, 2010·6 cites·3 claims
- 1573US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 1671US8894235B2Illumination deviceMINEBEA CO LTD·Filed 2013·Granted Nov 25, 2014·3 cites·9 claims
- 1768US9453621B2Illumination apparatus having interconnectable light emitting partsMINEBEA CO LTD·Filed 2014·Granted Sep 27, 2016·2 cites·8 claims
- 1866US7420158B2Spread illuminating apparatus including a housing frame with an outer frame member and an inner frame member jointed to a light conductor plateMINEBEA CO LTD·Filed 2007·Granted Sep 2, 2008·4 cites·11 claims
- 1966US6180968B1Compound semiconductor device and method of manufacturing the sameNEC CORP·Filed 1997·Granted Jan 30, 2001·26 cites·8 claims
- 2065US7600909B2Spread illuminating apparatusMINEBEA CO LTD·Filed 2007·Granted Oct 13, 2009·3 cites·8 claims
- 2165US5949096AField effect transistor with stabilized threshold voltageNEC CORP·Filed 1998·Granted Sep 7, 1999·24 cites·16 claims
- 2263US2025132752A1Alternating current signal transfer apparatus and alternating current apparatusLASER SYSTEMS INC·Filed 2024·Application pending·0 cites
- 2362US7866873B2Planar illumination deviceMINEBEA CO LTD·Filed 2006·Granted Jan 11, 2011·2 cites·6 claims
- 2461US9551478B2Lighting deviceMINEBEA CO LTD·Filed 2014·Granted Jan 24, 2017·1 cites·7 claims
- 2559US8783934B2Spread illuminating apparatusOHNO YASUO·Filed 2012·Granted Jul 22, 2014·1 cites·8 claims
- 2658US8534895B2Light emitting device with a point-like light sourceOHNO YASUO·Filed 2012·Granted Sep 17, 2013·1 cites·8 claims
- 2758US2005147672A1Tablets quickly disintegrating in mouthFiled 2005·Application pending·0 cites
- 2857US2003161879A1Tablets quickly disintegrating in mouthFiled 2003·Application pending·0 cites
- 2955US6121641ACompound semiconductor field-effect transistor with improved current flow characteristicNEC CORP·Filed 1997·Granted Sep 19, 2000·15 cites·8 claims
- 3054US2025132479A1Alternating current apparatusLASER SYSTEMS INC·Filed 2024·Application pending·0 cites
- 3150US4831422AField effect transistorNEC CORP·Filed 1986·Granted May 16, 1989·12 cites·10 claims
- 3248US11196302B2Resonance apparatus, power transmission apparatus, and power transmission methodLASER SYSTEMS INC·Filed 2020·Granted Dec 7, 2021·0 cites·9 claims
- 3348US11095339B2Resonance apparatus, power transmission apparatus, and power transmission method to improve noncontact power transmissionLASER SYSTEMS INC·Filed 2020·Granted Aug 17, 2021·0 cites·6 claims
- 3448US8061885B2Planar illumination deviceOHNO YASUO·Filed 2010·Granted Nov 22, 2011·0 cites·4 claims
- 3547US2009201699A1Planar Illumination Device and Manufacturing Method of SameMINEBEA CO LTD·Filed 2006·Application pending·0 cites
- 3647US2023146286A1Protein diagnostic biomarker for severe drug eruptionJAPAN AS REPRESENTED BY DIRECTOR GENERAL OF NAT INSTITUTE OF HEALTH SCIENCES·Filed 2021·Application pending·0 cites
- 3746US2009207630A1Planar illumination deviceMINEBEA CO LTD·Filed 2006·Application pending·0 cites
- 3844US8454220B2Illuminator with light source units radially arranged at a reference point of a base frameOHNO YASUO·Filed 2012·Granted Jun 4, 2013·0 cites·8 claims
- 3943US4530001AHigh voltage integrated semiconductor devices using a thermoplastic resin layerOKI ELECTRIC IND CO LTD·Filed 1981·Granted Jul 16, 1985·10 cites·14 claims
- 4042US6278144B1Field-effect transistor and method for manufacturing the field effect transistorNEC CORP·Filed 1999·Granted Aug 21, 2001·6 cites·2 claims
- 4141US2009016080A1Planar Lighting ApparatusMINEBEA CO LTD·Filed 2005·Application pending·0 cites
- 4240US11171572B2Microwave-rectifying circuitLASER SYSTEMS INC·Filed 2018·Granted Nov 9, 2021·0 cites·4 claims
- 4339US9739447B2Lighting apparatusMINEBEA CO LTD·Filed 2015·Granted Aug 22, 2017·0 cites·9 claims
- 4438US11469682B2Semiconductor deviceLASER SYSTEMS INC·Filed 2018·Granted Oct 11, 2022·0 cites·10 claims
- 4538US5891757AMethod for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layerNEC CORP·Filed 1996·Granted Apr 6, 1999·5 cites·6 claims
- 4637US5389802AHeterojunction field effect transistor (HJFET) having an improved frequency characteristicNEC CORP·Filed 1993·Granted Feb 14, 1995·5 cites·3 claims
- 4737US2001042872A1Field-effect transistor and method for manufacturing the field effect transistorFiled 2001·Application pending·0 cites
- 4836US6075263AMethod of evaluating the surface state and the interface trap of a semiconductorNEC CORP·Filed 1998·Granted Jun 13, 2000·5 cites·3 claims
- 4932US5619146ASwitching speed fluctuation detecting apparatus for logic circuit arrangementNEC CORP·Filed 1996·Granted Apr 8, 1997·2 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →