Inventor · disambiguated record
Hisashi Abe
Also filed as: ABE HISASHI
19 granted patents·2 pending applications·762 citations·filing 1992–2011
95Inventor score
Files withSEMICONDUCTOR ENERGY LAB10SANYO ELECTRIC CO5YAMAZAKI SHUNPEI2IFIRE IP CORP1JAPAN SCIENCE & TECH CORP1
Top patents by PatentIndex Score
21 records- 0197US5330578APlasma treatment apparatusSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Jul 19, 1994·221 cites·7 claims
- 0295US6283060B1Plasma CVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Sep 4, 2001·72 cites·19 claims
- 0395US5721601ADisplay units having two insolating films and a planarizing film and process for producing the sameSANYO ELECTRIC CO·Filed 1995·Granted Feb 24, 1998·186 cites·26 claims
- 0494US6482752B1Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Nov 19, 2002·114 cites·40 claims
- 0590US8278195B2Plasma CVD apparatusYAMAZAKI SHUNPEI·Filed 2011·Granted Oct 2, 2012·3 cites·28 claims
- 0689US7723218B2Plasma CVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted May 25, 2010·6 cites·111 claims
- 0782US7452794B2Manufacturing method of a thin film semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Nov 18, 2008·5 cites·72 claims
- 0880US6281057B2Method of manufacturing a semiconductor deviceSANYO ELECTRIC CO·Filed 1998·Granted Aug 28, 2001·67 cites·21 claims
- 0977US8053338B2Plasma CVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 2009·Granted Nov 8, 2011·1 cites·77 claims
- 1077US7271082B2Method of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2002·Granted Sep 18, 2007·13 cites·42 claims
- 1175US6499427B1Plasma CVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Dec 31, 2002·8 cites·10 claims
- 1273US7691692B2Substrate processing apparatus and a manufacturing method of a thin film semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Apr 6, 2010·2 cites·36 claims
- 1371US6288412B1Thin film transistors for display devices having two polysilicon active layers of different thicknessesSANYO ELECTRIC CO·Filed 1997·Granted Sep 11, 2001·37 cites·5 claims
- 1467US8392643B2Data processing device, semiconductor integrated circuit device, and abnormality detection methodYAMAGUCHI RYOICHI·Filed 2011·Granted Mar 5, 2013·3 cites·14 claims
- 1555US5707882ASemiconductor device for display device using thin film transistors and process of manufacturing the sameSANYO ELECTRIC CO·Filed 1995·Granted Jan 13, 1998·19 cites·13 claims
- 1653US8304350B2Method of manufacturing a semiconductor deviceYAMAZAKI SHUNPEI·Filed 2010·Granted Nov 6, 2012·0 cites·38 claims
- 1752US7150669B2Electroluminescent panel and a manufacturing method thereforSANYO ELECTRIC CO·Filed 2003·Granted Dec 19, 2006·5 cites·1 claims
- 1841US2008156399A1High-Concentration Carburized/Low-Strain Quenched Member and Process for Producing the SameMACHIDA ISAO·Filed 2006·Application pending·0 cites
- 1937US7374938B2Process for producing non-cellulosic callose fiber by plant protoplast and callose fiberJAPAN SCIENCE & TECH CORP·Filed 2001·Granted May 20, 2008·0 cites·1 claims
- 2033US2003066485A1Plasma CVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 2002·Application pending·0 cites
- 2129US7497755B2Apparatus for testing electroluminescent displayIFIRE IP CORP·Filed 2004·Granted Mar 3, 2009·0 cites·29 claims
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