Inventor · disambiguated record
Jaeshin Cho
Also filed as: CHO JAESHIN
12 granted patents·191 citations·filing 1992–2020
91Inventor score
Top patents by PatentIndex Score
12 records- 0182US5444016AMethod of making ohmic contacts to a complementary III-V semiconductor deviceFiled 1993·Granted Aug 22, 1995·51 cites·6 claims
- 0276US5484740AMethod of manufacturing a III-V semiconductor gate structureMOTOROLA INC·Filed 1994·Granted Jan 16, 1996·55 cites·19 claims
- 0364US5707901AMethod utilizing an etch stop layerMOTOROLA INC·Filed 1996·Granted Jan 13, 1998·32 cites·17 claims
- 0446US11380625B2Shielding structure, semiconductor package structure with shielding structureADVANCED SEMICONDUCTOR ENG KOREA INC·Filed 2020·Granted Jul 5, 2022·0 cites·17 claims
- 0546US6057219AMethod of forming an ohmic contact to a III-V semiconductor materialMOTOROLA INC·Filed 1994·Granted May 2, 2000·11 cites·15 claims
- 0644US5619064AIII-V semiconductor gate structure and method of manufactureMOTOROLA INC·Filed 1996·Granted Apr 8, 1997·10 cites·5 claims
- 0744US5389564AMethod of forming a GaAs FET having etched ohmic contactsMOTOROLA INC·Filed 1992·Granted Feb 14, 1995·10 cites·13 claims
- 0836US5583355ASelf-aligned FET having etched ohmic contactsMOTOROLA INC·Filed 1995·Granted Dec 10, 1996·4 cites·5 claims
- 0936US5512518AMethod of manufacture of multilayer dielectric on a III-V substrateMOTOROLA INC·Filed 1994·Granted Apr 30, 1996·8 cites·13 claims
- 1034US5384269AMethods for making and using a shallow semiconductor junctionMOTOROLA INC·Filed 1994·Granted Jan 24, 1995·7 cites·14 claims
- 1132US5387548AMethod of forming an etched ohmic contactMOTOROLA INC·Filed 1993·Granted Feb 7, 1995·3 cites·18 claims
- 1227US6334929B1Plasma processing methodMOTOROLA INC·Filed 1994·Granted Jan 1, 2002·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →