Inventor · disambiguated record
Yoshiaki Mokuno
Also filed as: MOKUNO YOSHIAKI
7 granted patents·4 pending applications·20 citations·filing 1995–2022
77Inventor score
Files withAIST4NAT INST OF ADVANCED IND SCIEN3HIDEAKI YAMADA2AGENCY IND SCIENCE TECHN1MOKUNO YOSHIAKI1
Top patents by PatentIndex Score
11 records- 0188US8940266B2Large diamond crystal substrates and methods for producing the sameHIDEAKI YAMADA·Filed 2009·Granted Jan 27, 2015·11 cites·12 claims
- 0277US7736435B2Method of producing single crystalNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Jun 15, 2010·3 cites·24 claims
- 0364US12324085B2Microwave plasma treatment deviceAIST·Filed 2022·Granted Jun 3, 2025·0 cites·10 claims
- 0454US9410241B2Method for separating surface layer or growth layer of diamondMOKUNO YOSHIAKI·Filed 2007·Granted Aug 9, 2016·0 cites·10 claims
- 0549US11355591B2Single crystal diamond and semiconductor element using sameAIST·Filed 2018·Granted Jun 7, 2022·0 cites·7 claims
- 0648US2024258195A1Bonded body comprising mosaic diamond wafer and semiconductor of different type, method for producing same, and mosaic diamond wafer for use in bonded body with semiconductor of different typeAIST·Filed 2022·Application pending·0 cites
- 0747US2012302045A1Method for producing mosaic diamondHIDEAKI YAMADA·Filed 2010·Application pending·0 cites
- 0845US11522055B2Stack comprising single-crystal diamond substrateAIST·Filed 2019·Granted Dec 6, 2022·0 cites·6 claims
- 0944US2009308305A1Process for producing single-crystal substrate with off angleNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 1042US2010000967A1Removal method of surface damage of single crystal diamondNAT INST OF ADVANCED IND SCIEN·Filed 2008·Application pending·0 cites
- 1141US5637880AMethod for extracting ion current from space of high vacuum into space of low vacuumAGENCY IND SCIENCE TECHN·Filed 1995·Granted Jun 10, 1997·6 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →