Inventor · disambiguated record
Jon S. Owyang
Also filed as: OWYANG JON · OWYANG JON S
8 granted patents·2 pending applications·873 citations·filing 1995–2006
91Inventor score
Top patents by PatentIndex Score
10 records- 0196US7205247B2Atomic layer deposition of hafnium-based high-k dielectricAVIZA TECH INC·Filed 2004·Granted Apr 17, 2007·563 cites·13 claims
- 0289US5837598ADiffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making sameLSI LOGIC CORP·Filed 1997·Granted Nov 17, 1998·91 cites·15 claims
- 0378US5646073AProcess for selective deposition of polysilicon over single crystal silicon substrate and resulting productLSI LOGIC CORP·Filed 1995·Granted Jul 8, 1997·54 cites·11 claims
- 0476US5893952AApparatus for rapid thermal processing of a waferLSI LOGIC CORP·Filed 1997·Granted Apr 13, 1999·38 cites·20 claims
- 0576US5818100AProduct resulting from selective deposition of polysilicon over single crystal silicon substrateLSI LOGIC CORP·Filed 1997·Granted Oct 6, 1998·43 cites·22 claims
- 0671US6060375AProcess for forming re-entrant geometry for gate electrode of integrated circuit structureLSI LOGIC CORP·Filed 1996·Granted May 9, 2000·39 cites·13 claims
- 0771US5897381AMethod of forming a layer and semiconductor substrateLSI LOGIC CORP·Filed 1997·Granted Apr 27, 1999·30 cites·25 claims
- 0856US5756369ARapid thermal processing using a narrowband infrared source and feedbackLSI LOGIC CORP·Filed 1996·Granted May 26, 1998·15 cites·13 claims
- 0950US2007031598A1Method for depositing silicon-containing filmsOKUYAMA YOSHIKAZU·Filed 2006·Application pending·0 cites
- 1042US2006264066A1Multilayer multicomponent high-k films and methods for depositing the sameAVIZA TECH INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →