Inventor · disambiguated record
Jian-Jou Lian
Also filed as: LIAN JIAN-JOU
40 granted patents·11 pending applications·28 citations·filing 2009–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47TAIWAN SEMICONDUTOR MFG COMPANY LTD2SOLAR APPLIED MAT TECH CORP1SOLAR APPLIED MATERIALS TECHNO1
Top patents by PatentIndex Score
51 records- 0198US11600521B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·5 cites·20 claims
- 0290US10312106B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·5 cites·20 claims
- 0389US10699944B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·20 claims
- 0489US10179878B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·5 cites·20 claims
- 0588US2025300008A1Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0687US12347724B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 0787US10483108B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·3 cites·20 claims
- 0885US2025318176A1Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0984US12369348B2Fin Field-Effect Transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1084US11942362B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 1184US11378882B2Chemical composition for tri-layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 1282US2024282575A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1381US12080556B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·16 claims
- 1480US12317525B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1580US2025253161A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US11201084B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·2 cites·20 claims
- 1779US10676668B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 1878US11901441B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 13, 2024·0 cites·20 claims
- 1977US12308248B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2077US11522083B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·1 cites·20 claims
- 2176US11990339B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
- 2276US11978801B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 2375US11735425B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2474US12183823B2Fin field-effect transistor with a gate structure having a dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 2574US11996470B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 2674US11735426B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2774US2023369494A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2873US11855193B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2972US2024063060A1Patterning method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3072US2025386576A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 3171US10312073B2Selective removal of carbon-containing and nitrogen-containing silicon residuesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·1 cites·20 claims
- 3269US11817330B2Method for processing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3369US11588041B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 3469US11309190B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 3568US11309185B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 3668US11227940B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 3767US11749753B2Methods of forming a semiconductor device with a gate structure having a dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 3867US11081350B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 3966US11101135B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 4065US11398391B2Substrate processing apparatus and method for processing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 4162US10867803B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4261US10529572B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·21 claims
- 4360US11848239B2Patterning method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 4458US12362227B2Method for improving profile of interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4558US2025364412A1Structure for self-aligned via and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4656US12376358B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LTD·Filed 2021·Granted Jul 29, 2025·0 cites·18 claims
- 4756US12237400B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 4854US10761423B2Chemical composition for tri-layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·0 cites·20 claims
- 4954US2022334473A1Chemical Composition for Tri-Layer RemovalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 5049US2010226839A1Method For Recovery of GalliumSOLAR APPLIED MATERIALS TECHNO·Filed 2009·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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