Inventor · disambiguated record
Saburo Kanai
Also filed as: KANAI SABURO
29 granted patents·17 pending applications·1,138 citations·filing 1990–2010
98Inventor score
Top patents by PatentIndex Score
46 records- 0195US6171438B1Plasma processing apparatus and plasma processing methodHITACHI LTD·Filed 1999·Granted Jan 9, 2001·100 cites·48 claims
- 0294US6833051B2Plasma processing apparatus and methodHITACHI LTD·Filed 2002·Granted Dec 21, 2004·33 cites·13 claims
- 0394US6815365B2Plasma etching apparatus and plasma etching methodHITACHI LTD·Filed 2001·Granted Nov 9, 2004·44 cites·10 claims
- 0494US6373681B2Electrostatic chuck, and method of and apparatus for processing sample using the chuckHITACHI LTD·Filed 2001·Granted Apr 16, 2002·67 cites·2 claims
- 0594US5536359ASemiconductor device manufacturing apparatus and method with optical monitoring of state of processing chamberHITACHI LTD·Filed 1994·Granted Jul 16, 1996·86 cites·26 claims
- 0692US6180019B1Plasma processing apparatus and methodHITACHI LTD·Filed 1997·Granted Jan 30, 2001·51 cites·2 claims
- 0791US6499424B2Plasma processing apparatus and methodHITACHI LTD·Filed 2001·Granted Dec 31, 2002·23 cites·12 claims
- 0891US6245202B1Plasma treatment deviceHITACHI LTD·Filed 1996·Granted Jun 12, 2001·115 cites·16 claims
- 0991US5895586APlasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminumHITACHI LTD·Filed 1995·Granted Apr 20, 1999·74 cites·5 claims
- 1090US5946184AElectrostatic chuck, and method of and apparatus for processing sampleHITACHI LTD·Filed 1997·Granted Aug 31, 1999·87 cites·6 claims
- 1190US5874012APlasma processing apparatus and plasma processing methodHITACHI LTD·Filed 1996·Granted Feb 23, 1999·60 cites·31 claims
- 1290US5276386AMicrowave plasma generating method and apparatusHITACHI LTD·Filed 1991·Granted Jan 4, 1994·66 cites·19 claims
- 1382US6846363B2Plasma processing apparatus and methodHITACHI LTD·Filed 2002·Granted Jan 25, 2005·11 cites·6 claims
- 1482US6243251B1Electrostatic chuck, and method of and apparatus for processing sample using the chuckHITACHI LTD·Filed 1999·Granted Jun 5, 2001·50 cites·2 claims
- 1581US6481370B2Plasma processsing apparatusHITACHI LTD·Filed 2000·Granted Nov 19, 2002·10 cites·9 claims
- 1679US6549393B2Semiconductor wafer processing apparatus and methodHITACHI LTD·Filed 2001·Granted Apr 15, 2003·19 cites·8 claims
- 1778US5804033AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1993·Granted Sep 8, 1998·32 cites·6 claims
- 1873US6370007B2Electrostatic chuckHITACHI LTD·Filed 2001·Granted Apr 9, 2002·17 cites·3 claims
- 1972US5781400AElectrostatically attracting electrode and a method of manufacture thereofHITACHI LTD·Filed 1996·Granted Jul 14, 1998·34 cites·9 claims
- 2071US7565879B2Plasma processing apparatusHITACHI LTD·Filed 2004·Granted Jul 28, 2009·6 cites·4 claims
- 2169US5520771AMicrowave plasma processing apparatusHITACHI LTD·Filed 1995·Granted May 28, 1996·28 cites·10 claims
- 2265US7208422B2Plasma processing methodHITACHI LTD·Filed 2004·Granted Apr 24, 2007·4 cites·28 claims
- 2364US6482747B1Plasma treatment method and plasma treatment apparatusHITACHI LTD·Filed 1998·Granted Nov 19, 2002·22 cites·19 claims
- 2463US6583979B1Electrostatically attracting electrode and a method of manufacture thereofHITACHI LTD·Filed 1998·Granted Jun 24, 2003·25 cites·6 claims
- 2561US4971651AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1990·Granted Nov 20, 1990·15 cites·20 claims
- 2661US2009289035A1Plasma Processing Apparatus And Plasma Processing MethodKANAI SABURO·Filed 2009·Application pending·0 cites
- 2758US6235146B1Vacuum treatment system and its stageHITACHI LTD·Filed 1999·Granted May 22, 2001·22 cites·14 claims
- 2856US2006249254A1Plasma processing apparatus and plasma processing methodKANAI SABURO·Filed 2006·Application pending·0 cites
- 2955US2010140224A1Plasma Processing Apparatus And Plasma Processing MethodKANAI SABURO·Filed 2010·Application pending·0 cites
- 3050US2006060300A1Plasma treatment methodTAKAHASHI KAZUE·Filed 2005·Application pending·0 cites
- 3149US6156663AMethod and apparatus for plasma processingHITACHI LTD·Filed 1996·Granted Dec 5, 2000·16 cites·11 claims
- 3248US2007240825A1Wafer processing apparatus capable of controlling wafer temperatureKANNO SEIICHIRO·Filed 2007·Application pending·0 cites
- 3346US5914051AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1995·Granted Jun 22, 1999·10 cites·6 claims
- 3445US2002084035A1Plasma processing apparatus and methodFiled 2002·Application pending·0 cites
- 3545US2004045675A1Plasma etching apparatusFiled 2003·Application pending·0 cites
- 3645US2004016508A1Plasma etching apparatus and plasma etching methodFiled 2003·Application pending·0 cites
- 3745US2003203640A1Plasma etching apparatusFiled 2003·Application pending·0 cites
- 3845US2004009617A1Plasma etching apparatus and plasma etching methodFiled 2003·Application pending·0 cites
- 3945US2005236109A1Plasma etching apparatus and plasma etching methodMASUDA TOSHIO·Filed 2005·Application pending·0 cites
- 4044US5785807AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1991·Granted Jul 28, 1998·11 cites·16 claims
- 4144US2003024646A1Plasma etching apparatus and plasma etching methodFiled 2002·Application pending·0 cites
- 4241US2003029572A1Semiconductor wafer processing apparatus and methodFiled 2002·Application pending·0 cites
- 4341US2003060054A1Plasma treatment methodFiled 2002·Application pending·0 cites
- 4440US2006042757A1Wafer processing apparatus capable of controlling wafer temperatureKANNO SEIICHIRO·Filed 2004·Application pending·0 cites
- 4531US2002005252A1Plasma etching apparatus and plasma etching methodFiled 1999·Application pending·0 cites
- 4631US2002119670A1Plasma etching apparatus and plasma etching methodFiled 1999·Application pending·0 cites
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