Inventor · disambiguated record
Thomas Hoffman
Also filed as: HOFFMAN THOMAS · HOFFMAN THOMAS Y
6 granted patents·4 pending applications·76 citations·filing 2002–2016
80Inventor score
Files withINTEL CORP3HOFFMAN THOMAS1HOFFMAN THOMAS Y1IMEC INTER UNI MICRO ELECTR1INTERUNIVERSITAIR MICROELEKTOR1
Top patents by PatentIndex Score
10 records- 0192US6982433B2Gate-induced strain for MOS performance improvementINTEL CORP·Filed 2003·Granted Jan 3, 2006·69 cites·25 claims
- 0278US8482043B2Method for improving transistor performance through reducing the salicide interface resistanceMURTHY ANAND·Filed 2009·Granted Jul 9, 2013·4 cites·5 claims
- 0377US9437710B2Method for improving transistor performance through reducing the salicide interface resistanceINTEL CORP·Filed 2014·Granted Sep 6, 2016·2 cites·8 claims
- 0468US10424517B2Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 24, 2019·1 cites·20 claims
- 0557US9202889B2Method for improving transistor performance through reducing the salicide interface resistanceINTEL CORP·Filed 2013·Granted Dec 1, 2015·0 cites·6 claims
- 0647US2008311720A1Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regionsHOFFMAN THOMAS·Filed 2008·Application pending·0 cites
- 0742US2009206417A1Semiconductor device and method for fabricating the sameINTERUNIVERSITAIR MICROELEKTOR·Filed 2009·Application pending·0 cites
- 0837US2009174003A1Dual work function device with stressor layer and method for manufacturing the sameIMEC INTER UNI MICRO ELECTR·Filed 2008·Application pending·0 cites
- 0936US2004102013A1Codoping of source drains using carbon or fluorine ion implants to improve polysilicon depletionFiled 2002·Application pending·0 cites
- 1033US8912055B2Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable therebyHOFFMAN THOMAS Y·Filed 2012·Granted Dec 16, 2014·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →