Inventor · disambiguated record
Koji Arita
Also filed as: ARITA KOJI
84 granted patents·9 pending applications·1,795 citations·filing 1978–2012
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD25SYMETRIX CORP16NEC ELECTRONICS CORP14MATSUSHITA ELECTRONICS CORP13ARITA KOJI5
Top patents by PatentIndex Score
93 records- 0196US6236076B1Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient materialSYMETRIX CORP·Filed 1999·Granted May 22, 2001·148 cites·29 claims
- 0295US6198225B1Ferroelectric flat panel displaysSYMETRIX CORP·Filed 1999·Granted Mar 6, 2001·109 cites·52 claims
- 0394US8355274B2Current steering element, storage element, storage device, and method for manufacturing current steering elementPANASONIC CORP·Filed 2009·Granted Jan 15, 2013·34 cites·9 claims
- 0493US5624864ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRONICS CORP·Filed 1994·Granted Apr 29, 1997·71 cites·1 claims
- 0589US8482958B2Current steering element, memory element, memory, and method of manufacturing current steering elementHAYAKAWA YUKIO·Filed 2011·Granted Jul 9, 2013·13 cites·7 claims
- 0688US6140672AFerroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitorSYMETRIX CORP·Filed 1999·Granted Oct 31, 2000·97 cites·22 claims
- 0788US4214925AMethod for fabricating brazed aluminum fin heat exchangersKOBE STEEL LTD·Filed 1978·Granted Jul 29, 1980·47 cites·11 claims
- 0887US8394669B2Resistance variable element and resistance variable memory deviceARITA KOJI·Filed 2010·Granted Mar 12, 2013·12 cites·18 claims
- 0987US7388291B2Semiconductor device and method of fabricating the sameNEC ELECTRONICS CORP·Filed 2005·Granted Jun 17, 2008·11 cites·5 claims
- 1087US6326315B1Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 2000·Granted Dec 4, 2001·43 cites·27 claims
- 1187US6204111B1Fabrication method of capacitor for integrated circuitMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Mar 20, 2001·60 cites·4 claims
- 1286US7563705B2Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Jul 21, 2009·10 cites·9 claims
- 1386US6214660B1Capacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Apr 10, 2001·58 cites·3 claims
- 1486US5780351ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 14, 1998·41 cites·6 claims
- 1585US6143597AMethod of manufacturing capacitor included in semiconductor device and the capacitor thereofMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Nov 7, 2000·60 cites·10 claims
- 1684US8351244B2Memory cell array, nonvolatile storage device, memory cell, and method of manufacturing memory cell arrayPANASONIC CORP·Filed 2010·Granted Jan 8, 2013·8 cites·7 claims
- 1784US6537830B1Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric materialSYMETRIX CORP·Filed 2000·Granted Mar 25, 2003·31 cites·34 claims
- 1884US6404003B1Thin film capacitors on silicon germanium substrateSYMETRIX CORP·Filed 1999·Granted Jun 11, 2002·46 cites·26 claims
- 1983US5837591AMethod of manufacturing a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 17, 1998·47 cites·6 claims
- 2080US6372518B1Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 16, 2002·23 cites·56 claims
- 2179US7981760B2Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage devicePANASONIC CORP·Filed 2009·Granted Jul 19, 2011·6 cites·16 claims
- 2279US6469334B2Ferroelectric field effect transistorSYMETRIX CORP·Filed 2001·Granted Oct 22, 2002·20 cites·10 claims
- 2379US6358758B2Low imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 2001·Granted Mar 19, 2002·18 cites·9 claims
- 2477US8441060B2Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory elementNINOMIYA TAKEKI·Filed 2009·Granted May 14, 2013·5 cites·11 claims
- 2577US6281534B1Low imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1998·Granted Aug 28, 2001·40 cites·15 claims
- 2677US5627391ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1995·Granted May 6, 1997·35 cites·5 claims
- 2777US5528038ATemperature distribution measurement apparatus and its application to a human body detecting systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jun 18, 1996·42 cites·10 claims
- 2876US6333528B1Semiconductor device having a capacitor exhibiting improved moisture resistanceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 25, 2001·23 cites·2 claims
- 2976US5370811AWorking fluid containing tetrafluoroethaneMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Dec 6, 1994·27 cites·14 claims
- 3075US5088302APortable cooler using chemical reactionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Feb 18, 1992·33 cites·13 claims
- 3174US7833901B2Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layerNEC ELECTRONICS CORP·Filed 2006·Granted Nov 16, 2010·5 cites·44 claims
- 3273US8445886B2Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory elementFUJII SATORU·Filed 2010·Granted May 21, 2013·3 cites·19 claims
- 3372US7132732B2Semiconductor device having two distinct sioch layersNEC ELECTRONICS CORP·Filed 2004·Granted Nov 7, 2006·16 cites·33 claims
- 3472US6255121B1Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursorSYMETRIX CORP·Filed 1999·Granted Jul 3, 2001·27 cites·27 claims
- 3571US8422268B2Current control element, memory element, and fabrication method thereofARITA KOJI·Filed 2009·Granted Apr 16, 2013·3 cites·12 claims
- 3671US6541375B1DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retentionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 1, 2003·38 cites·71 claims
- 3771US5929475ACapacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1995·Granted Jul 27, 1999·26 cites·2 claims
- 3871US5567052ATemperature distribution measurement apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 22, 1996·39 cites·24 claims
- 3970US6582972B1Low temperature oxidizing method of making a layered superlattice materialSYMETRIX CORP·Filed 2000·Granted Jun 24, 2003·13 cites·28 claims
- 4070US5591663AMethod of manufacturing ferroelectric capacitor with a hydrogen heat treatmentMATSUSHITA ELECTONICS CORP·Filed 1995·Granted Jan 7, 1997·30 cites·11 claims
- 4169US8563962B2Memory device and method of manufacturing the sameARITA KOJI·Filed 2010·Granted Oct 22, 2013·4 cites·9 claims
- 4269US6396095B1Semiconductor memory and method of driving semiconductor memoryMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 28, 2002·14 cites·3 claims
- 4369US5438849AAir conditioner and heat pump with tetra fluoroethane-containing working fluidMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Aug 8, 1995·19 cites·14 claims
- 4467US6333537B1Thin film capacitor with an improved top electrodeNEC CORP·Filed 1999·Granted Dec 25, 2001·24 cites·24 claims
- 4566US6169304B1Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 2, 2001·15 cites·2 claims
- 4665US4840042AHeat pump systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Jun 20, 1989·29 cites·10 claims
- 4764US6639262B2Metal oxide integrated circuit on silicon germanium substrateSYMETRIX CORP·Filed 2001·Granted Oct 28, 2003·7 cites·37 claims
- 4863US7960770B2Nonvolatile memory element array with storing layer formed by resistance variable layersPANASONIC CORP·Filed 2007·Granted Jun 14, 2011·2 cites·9 claims
- 4963US7341937B2Semiconductor device and method of manufacturing sameNEC ELECTRONICS CORP·Filed 2005·Granted Mar 11, 2008·2 cites·23 claims
- 5063US7074698B2Method of fabricating semiconductor device using plasma-enhanced CVDNEC ELECTRONICS CORP·Filed 2004·Granted Jul 11, 2006·5 cites·27 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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