Inventor · disambiguated record
Ajey Poovannummoottil Jacob
Also filed as: JACOB AJEY · JACOB AJEY P · JACOB AJEY POOVANNUMMOOTTIL
227 granted patents·37 pending applications·1,522 citations·filing 2009–2025
99Inventor score
Files withGLOBALFOUNDRIES INC176GLOBALFOUNDRIES US INC58UNIV SOUTHERN CALIFORNIA17IBM3ST MICROELECTRONICS INC3
Top patents by PatentIndex Score
264 records- 0198US11125944B2Polarizer with multiple evanescently coupled waveguidesGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·10 cites·20 claims
- 0298US11069402B1Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computingGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 20, 2021·10 cites·20 claims
- 0398US11029465B1Micro-ring modulatorGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 8, 2021·21 cites·15 claims
- 0498US10996398B1Switchable polarization splittersGLOBALFOUNDRIES US INC·Filed 2019·Granted May 4, 2021·18 cites·20 claims
- 0598US10955614B1Optical fiber coupler structure having manufacturing variation-sensitive transmission blocking regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 23, 2021·10 cites·20 claims
- 0698US10910503B1Semiconductor detectors with butt-end coupled waveguide and method of forming the sameGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·18 cites·20 claims
- 0798US10429582B1Waveguide-to-waveguide couplers with multiple tapersGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·59 cites·19 claims
- 0898US9972537B2Methods of forming graphene contacts on source/drain regions of FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 15, 2018·21 cites·24 claims
- 0998US9831131B1Method for forming nanowires including multiple integrated devices with alternate channel materialsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 28, 2017·27 cites·12 claims
- 1098US9349658B1Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of materialGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·31 cites·16 claims
- 1198US9343300B1Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted May 17, 2016·45 cites·18 claims
- 1298US8716156B1Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation processGLOBALFOUNDRIES INC·Filed 2013·Granted May 6, 2014·60 cites·39 claims
- 1397US11467343B2Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segmentsGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 11, 2022·4 cites·13 claims
- 1497US11105978B2Polarizers including stacked elementsGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 31, 2021·7 cites·20 claims
- 1597US10989876B1Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segmentsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 27, 2021·19 cites·20 claims
- 1697US10816726B1Edge couplers for photonics applicationsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·43 cites·20 claims
- 1797US10684530B1Electro-optic modulators with layered arrangementsGLOBALFOUNDRIES INC·Filed 2019·Granted Jun 16, 2020·13 cites·20 claims
- 1897US10641956B1Polarizers and polarization splitters phase-matched with a back-end-of-line layerGLOBALFOUNDRIES INC·Filed 2019·Granted May 5, 2020·22 cites·16 claims
- 1997US10585245B1Multiple-layer arrangements using tunable materials to provide switchable optical componentsGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·13 cites·20 claims
- 2097US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 2197US9318342B2Methods of removing fins for finfet semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·16 cites·12 claims
- 2297US9165837B1Method to form defect free replacement fins by H2 annealGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 20, 2015·35 cites·20 claims
- 2397US9147748B1Methods of forming replacement spacer structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·36 cites·14 claims
- 2496US11495700B2Photodetectors and semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 8, 2022·4 cites·20 claims
- 2596US11322636B2PhotodiodeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 2696US11256030B1Optical power splitters including a non-linear waveguide taperGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 22, 2022·8 cites·20 claims
- 2796US10649245B1Electro-optic modulators with stacked metal, dielectric, and active layersGLOBALFOUNDRIES INC·Filed 2019·Granted May 12, 2020·9 cites·20 claims
- 2896US10649140B1Back-end-of-line blocking structures arranged over a waveguide coreGLOBALFOUNDRIES INC·Filed 2019·Granted May 12, 2020·17 cites·19 claims
- 2996US10444433B1Waveguides including a patterned dielectric layerGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·22 cites·17 claims
- 3096US10436982B1Waveguide bends with field confinementGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 8, 2019·18 cites·20 claims
- 3196US10429581B1Polarization splitters based on stacked waveguidesGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·20 cites·20 claims
- 3296US10185092B1Hybrid grating couplers that overlap via an interconnect structure having a metallization layerGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 22, 2019·19 cites·20 claims
- 3396US9864136B1Non-planar monolithic hybrid optoelectronic structures and methodsGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 9, 2018·16 cites·19 claims
- 3496US9362405B1Channel cladding last process flow for forming a channel region on a FinFET deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·20 cites·19 claims
- 3596US9269628B1Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·26 cites·27 claims
- 3696US9147730B2Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting processGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·25 cites·20 claims
- 3796US9023705B1Methods of forming stressed multilayer FinFET devices with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·27 cites·10 claims
- 3895US11177404B2Fin-based photodetector structureGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·3 cites·20 claims
- 3995US10795083B1Heterogeneous directional couplers for photonics chipsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·13 cites·20 claims
- 4095US9263587B1Fin device with blocking layer in channel regionGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·16 cites·20 claims
- 4195US9093496B2Process for faciltiating fin isolation schemesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·19 cites·21 claims
- 4294US10816727B1Multimode waveguide bends with features to reduce bending lossGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·9 cites·14 claims
- 4394US10795082B1Bragg gratings with airgap claddingGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·12 cites·20 claims
- 4494US9799767B2Methods of forming PMOS and NMOS FinFET devices on CMOS based integrated circuit productsGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 24, 2017·12 cites·20 claims
- 4594US9455199B1Methods of forming strained and relaxed germanium fins for PMOS and NMOS finFET devices, respectivelyGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 27, 2016·11 cites·19 claims
- 4694US9318552B2Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·15 cites·21 claims
- 4794US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 4894US9147616B1Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·16 cites·14 claims
- 4994US9123627B1Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·17 cites·25 claims
- 5094US8673718B2Methods of forming FinFET devices with alternative channel materialsMASZARA WITOLD P·Filed 2012·Granted Mar 18, 2014·27 cites·16 claims
Showing the top 50 of 264 patent records by PatentIndex Score.
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